Annealing and crystallization processes in a hydrogenated amorphous SiC alloy film

We have investigated the reduction of unwanted interfacial SiO 2 layer at HfO 2 /Si interface brought about by the deposition of thin Hf metal buffer layer on Si substrate prior to the deposition of HfO 2 thin films for possible direct contact between HfO 2 thin film and Si substrate, necessary for the future generation devices based on high-j HfO 2 gate dielectrics. Reactive rf magnetron sputtering system along with the attached in-situ spectroscopic ellipsometry (SE) was used to predeposit Hf metal buffer layer as well as to grow HfO 2 thin films and also to undertake the in-situ characterization of the high-j HfO 2 thin films deposited on n-type h100i crystalline silicon substrate. The formation of the unwanted interfacial SiO 2 layer and its reduction due to the predeposited Hf metal buffer layer as well as the depth profiling and also structure of HfO 2 thin films were investigated by in-situ SE, Fourier Transform Infrared spectroscopy, and Grazing Incidence X-ray Diffraction. The study demonstrates that the predeposited Hf metal buffer layer has played a crucial role in eliminating the formation of unwanted interfacial layer and that the deposited high-j HfO 2 thin films are crystalline although they were deposited at room temperature. V C 2014 AIP Publishing LLC.

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“…. 47 It is obvious from Fig. 8 that the region from 989 to 1057 cm À1 does not contain any peaks corresponding to SiO x suboxide.…”

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confidence: 96%

In-situ spectroscopic ellipsometry and structural study of HfO2 thin films deposited by radio frequency magnetron sputtering

Cantaş

Aygün

Basa

2014

Journal of Applied Physics

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“…The IR spectra of samples deposited by varying w, displayed in Fig. 1, are typical of hydrogenated silicon carbon films [11] and are characterized by the near absence of C-H stretching modes in the region 2800-3000 cm -1 except for the sample deposited at 65 W which exhibits very feeble band in this region. Two prominent regions are observed from 2000 to 2200 cm -1 , due to Si-H stretching, and from 500 to 1200 cm -1 .…”

Section: Resultsmentioning

confidence: 99%

“…The intensity of these modes increases with the increase in rf power. The bond density of the modes can be evaluated from the integrated area of the deconvoluted bands using the appropriate inverse cross sections [11].The bond density for the non-hydrogenated Si-C (N Si-C ) mode is shown in Fig. 2 as a function of w. N Si-C is observed to increase almost linearly with w. The carbon content x = C/(C+Si), as obtained from nuclear measurements, versus w is also depicted in Fig.…”

Section: Resultsmentioning

confidence: 99%

Characterizations of nanostructured silicon‐carbon films deposited on p‐layer by PECVD

Coscia

Ambrosone

Basa

et al. 2010

Phys. Status Solidi (c)

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Nanostructured silicon carbon films composed of silicon nanocrystallites embedded in the amorphous silicon carbon matrix are prepared by a rf‐PECVD system at 250 °C from silane and methane gas mixture highly diluted in hydrogen onto 7059 Corning glass and p‐layer deposited on tin oxide substrates by varying rf power from 25 to 65 W. The structural and compositional properties of the films have been investigated. The study demonstrates that rf power controls the crystalline fraction as well as the silicon crystallite size and that p‐layer/tin oxide structure enhances the nucleation of silicon grains as compared to Corning glass (© 2010 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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“…But for the high dilution series it is the Si-C peak around 770-780 cm -1 which is most prominent. It has been reported [16] that the FWHM of the Si-C(s) peak increases with decrease in order and decreases with increase in order in the network. In our case FWHM of the Si-C(s) peak width for high dilution series ranges from 125 to 137 cm −1 on decreasing power density from 400mW/cm 2 to 200 mW/cm 2 (Fig.…”

Section: Hrtem Studymentioning

confidence: 96%

Nanocrystallites formation in a‐SiC by low power plasma enhanced chemical vapour deposition

Bhaduri

Kole

Chaudhuri³

2010

Phys. Status Solidi (c)

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Formation of nanocrystallites in the amorphous silicon carbide thin films deposited from silane methane mixture diluted in argon by plasma enhanced CVD has been studied under different levels of rf power density and Ar dilution. Systematic transformations between different polymorphic phases of SiC have been observed with changes in rf power and Ar dilution. At low Ar dilution no H‐SiC (α‐SiC) nanocrystallites was observed. Only traces of β‐SiC of Si were observed. With increase in Ar dilution formation of α‐SiC nanocrystallites was observed. Increase of rf power density at this dilution enhanced α‐SiC nanocrystallites but reduced β‐SiC slightly. Variation of SiC peak in the infra red absorption corresponds closely with the changes in β‐SiC nanocrystallites in the layers. (© 2010 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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Annealing and crystallization processes in a hydrogenated amorphous SiC alloy film

Cited by 153 publications

References 29 publications

In-situ spectroscopic ellipsometry and structural study of HfO2 thin films deposited by radio frequency magnetron sputtering

In-situ spectroscopic ellipsometry and structural study of HfO2 thin films deposited by radio frequency magnetron sputtering

Characterizations of nanostructured silicon‐carbon films deposited on p‐layer by PECVD

Nanocrystallites formation in a‐SiC by low power plasma enhanced chemical vapour deposition

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