Annealing and thickness effects on some electrical and optical properties of Sb:SnO<sub>2</sub>films

Shokr, E. Kh.; Wakkad, M. M.; El-Ghanny, H. A. Abd; Ali, H.M.

doi:10.1051/epjap:1999248

Cited by 11 publications

(7 citation statements)

References 38 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Optical parameters namely, refractive index (n) and extinction coefficient (k), have been determined from the transmittance and reflectance measurements using the following relation [13,14]:…”

Section: Methodsmentioning

confidence: 99%

“…However increasing carrier concentration may degrade the transparency due to increased free carrier absorption [8]. In that context, postdeposition annealing has been noted to be helpful in improving the film's electro-optical properties [14,21]. As-deposited films with x = 0.1 have been annealed at different temperatures in the range from 150 to 550°C for 15 min.…”

Section: Optical and Electrical Propertiesmentioning

confidence: 99%

See 1 more Smart Citation

Properties of transparent conducting oxides formed from CdO alloyed with In2O3

et al. 2007

View full text Add to dashboard Cite

Section: Methodsmentioning

confidence: 99%

Section: Optical and Electrical Propertiesmentioning

confidence: 99%

Properties of transparent conducting oxides formed from CdO alloyed with In2O3

et al. 2007

View full text Add to dashboard Cite

“…Sintering process on the tablets was carried out in the temperature range, T M =2 T T M , where T M is the melting point of the material to be sintered. 15) This process was performed for the present mixtures at 800 C for 3 h.…”

Section: Preparation Of Bulk Initial Materialsmentioning

confidence: 99%

Optical and Electrical Properties of Tin-Doped Cadmium Oxide Films Prepared by Electron Beam Technique

Ali

Hussein

Wakkad

et al. 2009

jjap

Self Cite

View full text Add to dashboard Cite

Tin-doped cadmium oxide films were deposited by electron beam evaporation technique. The structural, optical and electrical properties of the films were characterized. The X-ray diffraction (XRD) study reveals that the films are polycrystalline in nature. As composition and structure change due to the dopant ratio and annealing temperature, the carrier concentration was varied around 10 20 cm À3 , and the mobility increased from less than 10 to 45 cm 2 V À1 s À1. A transmittance value of $83% and a resistivity value of 4:4 Â 10 À4 cm were achieved for (CdO) 0:88 (SnO 2) 0:12 film annealed at 350 C for 15 min., whereas the maximum value of transmittance $93% and a resistivity value of 2:4 Â 10 À3 cm were obtained at 350 C for 30 min. The films exhibited direct band-to-band transitions, which corresponded to optical band gaps of 3.1-3.3 eV.

show abstract

“…The power, n, could be either direct or indirect and allowed or forbidden, i.e., 1/2, 2, 3/2 or 3 respectively. The best fitting for our experimental results with Tauc's equations is happened when the direct transition is considered, i.e., n = 1/2 [37].…”

Section: Optical Propertiesmentioning

confidence: 90%

Structural, electrical and optical properties investigation of nano-sized Sb_0.1(SnO₂)_0.9

Mohamed¹,

Ahmed²,

Ali³

et al. 2022

Phys. Scr.

View full text Add to dashboard Cite

Solid state reaction method are used to prepare Sbx(SnO2)1-x (x=0 and 0.1) with sintering temperatures, 600oC and 800oC. The crystallographic properties of undoped and doped SnO2 materials results showed the tetragonal rutile structure of SnO2. The crystallinity was clear and increased with increasing the heat treatment. For the most diffraction peaks the microstrain is negative because do˂ds indicating the generation of residual compressive stress in the surface. Rietveld refinement proved that a good fitting parameters Rp, Rwp, and χ2 makes the derived samples to be in a high quality, especially Sb0.1(SnO2)0.9 sample. Scanning Electron Microscopy (SEM) indicated that a spherical shape of SnO2 with nanoparticles but plates and nanorods shaped of SnO2 were detected for Sb0.1(SnO2)0.9 compound that was sintered at 800°C. SnO2 has grain size 67 nm and 86 nm at sintering temperatures 600°C and 800°C respectively, but after adding Sb the grain size decreases to be ≈44 nm at the same sintering temperatures. The electrical resistivity, ρ, of Sb0.1(SnO2)0.9 behaved as semiconductor-like. The magnetoresistance, MR, results showed that ρ(0.6 tesla) < ρ(0 tesla) at Tsint=600oC where ρ (0.6 tesla) > ρ (0 tesla) at Tsint=800°C because the crystallinity increased with increasing of the sintering temperatures. The results of seebeck showed that charge carriers are n-tape at Tsint=600°C and p-type at Tsint=800°C. The optical energy band, Eg of Sb0.1(SnO2)0.9 which were 2.49 eV and 3.21 eV at Tsint= 600°C and 800°C respectively and the high values of the transmittance make this compound is candidate to work as window layer in solar cell applications. The results of susceptibility denotes that the Sb0.1(SnO2)0.9 compound is a paramagnetic material.

show abstract

Annealing and thickness effects on some electrical and optical properties of Sb:SnO₂films

Cited by 11 publications

References 38 publications

Properties of transparent conducting oxides formed from CdO alloyed with In2O3

Properties of transparent conducting oxides formed from CdO alloyed with In2O3

Optical and Electrical Properties of Tin-Doped Cadmium Oxide Films Prepared by Electron Beam Technique

Structural, electrical and optical properties investigation of nano-sized Sb_0.1(SnO₂)_0.9

Contact Info

Product

Resources

About

Annealing and thickness effects on some electrical and optical properties of Sb:SnO2films

Cited by 11 publications

References 38 publications

Properties of transparent conducting oxides formed from CdO alloyed with In2O3

Properties of transparent conducting oxides formed from CdO alloyed with In2O3

Optical and Electrical Properties of Tin-Doped Cadmium Oxide Films Prepared by Electron Beam Technique

Structural, electrical and optical properties investigation of nano-sized Sb0.1(SnO2)0.9

Contact Info

Product

Resources

About

Annealing and thickness effects on some electrical and optical properties of Sb:SnO₂films

Structural, electrical and optical properties investigation of nano-sized Sb_0.1(SnO₂)_0.9