Annealing atmosphere effect on the resistive switching and magnetic properties of spinel Co<sub>3</sub>O<sub>4</sub> thin films prepared by a sol–gel technique

Yao, Chuangye; Ismail, Muhammad; Hao, Aize; Thatikonda, Santhosh Kumar; Huang, Wenhua; Qin, Ni; Bao, Dinghua

doi:10.1039/c9ra01121h

Cited by 43 publications

(19 citation statements)

References 71 publications

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“…In order to acquire micromorphology observation and particle size distribution, the air‐dried samples were directly viewed by field‐emission scanning electron microscopy (SEM, JSM‐6330F). Particle size was obtained in terms of the Gauss distribution fitting (Yao et al, 2019). The surface‐associated mapping was also recorded.…”

Section: Methodsmentioning

confidence: 99%

Improvement of aggregate‐associated organic carbon and its stability in bauxite residue by substrate amendment addition

et al. 2020

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Bauxite residue has extreme alkalinity, poor aggregate stability, and low organic carbon content, which limits plant growth on large expanses of bauxite residue disposal areas. Soil formation of bauxite residue is one of the effective approaches to transform bauxite residue into a soil-like medium for revegetation. In order to improve aggregate stability and organic carbon content in the short term, addition of substrate amendments is crucial to accelerate soil formation of bauxite residue. Nevertheless, the effect of different amendments on the stability, organic and humic substances distribution in bauxite residue aggregate is unclear. Therefore, a column experiment was used to investigate the distribution and stability of aggregate, and aggregate-associated carbon by adding phosphogypsum and vermicompost (PVC), and biosolids and microorganism (BSM). The average particle sizes of CK (control check), PVC, and BSM treatments were observed to be~114,~157, and~188 nm, respectively. Compared with CK treatment, the contents of organic carbon, humic acid, and fulvic acid following PVC treatment increased by 1.65, 1.59, and 1.57 times, respectively, and the increased contents of organic carbon, humic acid, and fulvic acid following BSM treatment reached 2.90, 2.69, and 2.60 times, respectively. Results demonstrated that amendment additions enhanced aggregate stability and carbon sequestration, but the effects of BSM treatment were better than those of PVC treatment. The findings offer an evidence that BSM treatment is a feasible approach to accelerate soil formation of bauxite residue, which shows promising applications to reclaim bauxite residue disposal areas.

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Section: Methodsmentioning

confidence: 99%

Improvement of aggregate‐associated organic carbon and its stability in bauxite residue by substrate amendment addition

et al. 2020

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“…As in vacuum-based metal oxides, the solution-based RRAM the device-to-device variability can be reduced by decreasing device size, as depicted in Figure 24a. [172] On the other hand, the cycle-to-cycle variability of each solution-based metal oxide RRAM device is highly dependent on the production process (mainly the annealing method (Figure 24b), doping (Figure 24c), and ambient conditions (Figure 24d), [179,222,228] since it is an intrinsic characteristic of the device (resistive switching layer and their interface properties). Consideration of all these parameters ensures that the S-RRAM variability can be controlled and diminished.…”

Section: Variabilitymentioning

confidence: 99%

“…Bao and co‐workers reported the annealing atmosphere (air, argon, and oxygen) effect on the resistive switching behavior of spinel Co 3 O 4 thin films. [ 222 ] A better stability and uniformity (low forming voltage and cycle‐to‐cycle variability) was achieved for the Pt/Co 3 O 4 /Pt RRAM devices in a nitrogen atmosphere due to the formation of confined conductive filaments and the suppression of the oxygen vacancies dispersion. Recently, Ha and co‐workers studied the annealing influence on solution‐based zirconium oxide (ZrO x ) thin films in air and in an oxygen atmosphere.…”

Section: Fundamentals Of Solution‐based Metal Oxide Rramsmentioning

confidence: 99%

“…Both solution‐based RRAM devices present excellent thermal stability with great retention and endurance characteristics. In conclusion, if an asymmetric structure (i.e., M (ohmic‐type)–O–M (Schottky‐type)) is not provided by electrode selection, different strategies, as previously mentioned in Section 2.1 by doping [ 139 ] and by the annealing atmosphere, [ 222 ] are fundamental.…”

Section: Fundamentals Of Solution‐based Metal Oxide Rramsmentioning

confidence: 99%

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Recent Progress in Solution‐Based Metal Oxide Resistive Switching Devices

et al. 2020

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Metal oxide resistive switching memories have been a crucial component for the requirements of the Internet of Things, which demands ultra‐low power and high‐density devices with new computing principles, exploiting low cost green products and technologies. Most of the reported resistive switching devices use conventional methods (physical and chemical vapor deposition), which are quite expensive due to their up‐scale production. Solution‐processing methods have been improved, being now a reliable technology that offers many advantages for resistive random‐access memory (RRAM) such as high versatility, large area uniformity, transparency, low‐cost and a simple fabrication of two‐terminal structures. Solution‐based metal oxide RRAM devices are emergent and promising non‐volatile memories for future electronics. In this review, a brief history of non‐volatile memories is highlighted as well as the present status of solution‐based metal oxide resistive random‐access memory (S‐RRAM). Then, a focus on describing the solution synthesis parameters of S‐RRAMs which induce a massive influence in the overall performance of these devices is discussed. Next, a precise analysis is performed on the metal oxide thin film and electrode interface and the recent advances on S‐RRAM that will allow their large‐area manufacturing. Finally, the figures of merit and the main challenges in S‐RRAMs are discussed and future trends are proposed.

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“…Chang et al [18] investigated the role of Fe 3 O 4 insertion layer to improve the reliability of Ag/Ta 2 O 5 /Pt resistive switching devices. Yao et al[19] examined the annealing atmospheric effect on resistive switching and magnetic properties of spinel Co 3 O 4 films.…”

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confidence: 99%

Oxygen annealing effect on resistive switching characteristics of multilayer CeO₂/Al/CeO₂ resistive random-access memory

Ismail

Khan

Rahmani

et al. 2020

Mater. Res. Express

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Cerium oxide-based memristors have been extensively studied because of their compatibility with CMOS technology. Yet, inconsistency of resistive switching parameters is one of the main contests in development of nonvolatile memory for commercialization. Owing to filamentary nature of the resistive switching devices, variability of the resistive switching characteristics can be reduced by doping, where conductive filaments can easily grow due to reduction in the formation energy of oxygen vacancies. In this work, multilayer CeO 2 /Al/CeO 2 films were prepared through radiofrequency (rf) sputtering at room temperature to study the effect of oxygen annealing on the resistive switching characteristics. Device with CeO 2 /Al/CeO 2 multilayer structure after annealing exhibits reduction of defects and improved switching endurance, good data retention, and uniformity in operational parameters. The resistive switching characteristics have been simulated using space charge limited conduction and Schottky emission at high field region of the high resistance state, which is well fitted by linear curve fitting analysis. Improvement in the switching characteristics revealed that Al charge trapping layer has diffused into the CeO 2 matrix, which might have resulted in lower density of oxygen vacancies due to oxygen annealing. Experimental I-V analysis indicate that oxygen annealing is an effective approach to enhance the switching characteristics of RRAM devices.

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Annealing atmosphere effect on the resistive switching and magnetic properties of spinel Co₃O₄ thin films prepared by a sol–gel technique

Abstract: The resistive switching and magnetic properties can be enhanced by controlling oxygen vacancies via the annealing atmosphere effect.

Cited by 43 publications

References 71 publications

Improvement of aggregate‐associated organic carbon and its stability in bauxite residue by substrate amendment addition

Improvement of aggregate‐associated organic carbon and its stability in bauxite residue by substrate amendment addition

Recent Progress in Solution‐Based Metal Oxide Resistive Switching Devices

Oxygen annealing effect on resistive switching characteristics of multilayer CeO₂/Al/CeO₂ resistive random-access memory

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Annealing atmosphere effect on the resistive switching and magnetic properties of spinel Co3O4 thin films prepared by a sol–gel technique

Abstract: The resistive switching and magnetic properties can be enhanced by controlling oxygen vacancies via the annealing atmosphere effect.

Cited by 43 publications

References 71 publications

Improvement of aggregate‐associated organic carbon and its stability in bauxite residue by substrate amendment addition

Improvement of aggregate‐associated organic carbon and its stability in bauxite residue by substrate amendment addition

Recent Progress in Solution‐Based Metal Oxide Resistive Switching Devices

Oxygen annealing effect on resistive switching characteristics of multilayer CeO2/Al/CeO2 resistive random-access memory

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Product

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Annealing atmosphere effect on the resistive switching and magnetic properties of spinel Co₃O₄ thin films prepared by a sol–gel technique

Oxygen annealing effect on resistive switching characteristics of multilayer CeO₂/Al/CeO₂ resistive random-access memory