Annealing behaviour in vacuum-deposited films of silicon oxide

Morley, A.R.; Campbell, D. S.

doi:10.1016/0040-6090(68)90054-0

Cited by 16 publications

(1 citation statement)

References 8 publications

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“…Figures 4 and 5 represent the variation of capacitance C and tan 6 with frequency at different temperatures for the AI-AIN-A1 capacitor structure. The invariant nature of capacitance and tan S over a wide range of frequency has been observed earlier with many dielectric materials (Morley andCampbell 1968, Harrop and. The' large increase of capacitance with decrease of frequency (below 5 kHz) can be appropriately explained on the basis of charge carriers being blocked at the cathodes.…”

Section: Frequency and Temperature Dependencementioning

confidence: 55%

Dielectric and AC conduction properties of ion plated aluminium nitride thin films

Mangalaraj

Radhakrishnan

Balasubramanian

1982

J. Phys. D: Appl. Phys.

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Aluminium nitride thin films were deposited by a reactive ion plating technique in a vacuum of 3*10-3 Torr. The composition of the film was analysed by IR spectrum. Thin film capacitors were formed as an Al-aluminium nitride-Al structure. The annealing characteristics of these structures have been studied at 420K. The frequency and temperature dependence of capacitance and tan delta have been studied in the audio frequency range 500 Hz-30 kHz and the results have been discussed. The dependence of AC conduction on frequency has been explained on the basis of the hopping conduction mechanism.

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Section: Frequency and Temperature Dependencementioning

confidence: 55%

Dielectric and AC conduction properties of ion plated aluminium nitride thin films

Mangalaraj

Radhakrishnan

Balasubramanian

1982

J. Phys. D: Appl. Phys.

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Stable Layer Systems with Diffusion Barrier Arrangements in Thin Film Technology

Langer

Schneider

1972

Cryst Res and Technol

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The physical and chemical interaction processes in thin film arrangements are followed by different ageing phenomena which influence the stability of their physical paramet.ers. These determine the reliability of the electronic components existing of thin films.On the base of own experimental investigations on tantalum and its oxides, beryllium oxide and tantalum-rhenium alloys tcchnological aspects and the application of new materials for lowering the ageing intensity are considered. @H3HqeCKOe U XIlMMqeCKOe B3aHMOAefiCTBHe B TOHKHX IIJIeHKaX npHBOnHT K pa3JIU' IHbIM (PeHOMeIIaM CTapeHHH, KOTOpbIe BJIHIIIOT Ha CTa6HJIbHOCTb UX (PH3H-YeCKHX 11apaMeTpOB. 3Ta CTa6HJlbHOCTb 0603HaYaeT Hank-KHOCTb 3JleKTPOHHblX npH60pOB, KOTOPbIe COCTORT M 3 3TMX TOHKMX llJleHOK. OKHCJla 6epHJIJIHH H CllJlaBOB TaHTaJla H PeHHfl , aBT0pbI.e PaCaMaTpHBaIOT MeXHO-Ha ocHoBe CBOHX 3IiClIepHMeHTaJII,HbIX mcnexoBaHnZi TaHTaaa EI ero OKEICJIOB, norwiecme acneKTbI H npwMeneHue H O P~I X MaTepaanon n m noHumeHm HHTeH-CHBHOCTH npoueccoe cTapeam.

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Effect of temperature on dielectric properties of SnO₂/Sb₂O₃ mixed thin films

Kumar

Rao

1990

Cryst. Res. Technol.

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Thin films of various thicknesses in the MIM structure have been prepared from the powder of SnO,/Sb,O, mixed sample by the thermal evaporation technique in a vacuum of Torr. Dielectric properties of Sn02/Sb,03 mixed thin films have been studied with temperature starting from LNT to RT and above RT and frequency ranging from 100Hz to 16kHz. The activation energy for the migration of charge carriers in SnO,/Sb,O, mixed thin films has been calculated and it is found to be 0.23 eV. The results thus obtained on dielectric properties of SnO,/Sb,O, mixed thin films are presented and discussed. WILLIAMS G. HYNES, RICHARD H. BUBE: J. Appl. Physics 49 (1978) 304 Let. 2 (1983) 63 and their mixed thin

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Annealing behaviour in vacuum-deposited films of silicon oxide

Cited by 16 publications

References 8 publications

Dielectric and AC conduction properties of ion plated aluminium nitride thin films

Dielectric and AC conduction properties of ion plated aluminium nitride thin films

Stable Layer Systems with Diffusion Barrier Arrangements in Thin Film Technology

Effect of temperature on dielectric properties of SnO₂/Sb₂O₃ mixed thin films

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Annealing behaviour in vacuum-deposited films of silicon oxide

Cited by 16 publications

References 8 publications

Dielectric and AC conduction properties of ion plated aluminium nitride thin films

Dielectric and AC conduction properties of ion plated aluminium nitride thin films

Stable Layer Systems with Diffusion Barrier Arrangements in Thin Film Technology

Effect of temperature on dielectric properties of SnO2/Sb2O3 mixed thin films

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Effect of temperature on dielectric properties of SnO₂/Sb₂O₃ mixed thin films