Annealing dynamics of nitrogen-implanted GaAs films investigated by current–voltage and deep-level transient spectroscopy

Abstract

We present electrical data to show that, after nitrogen implantation, GaAs films become resistive after high-temperature annealing. The activation energies of the resistance are determined to be 0.34, 0.59, and 0.71 eV after annealing at 500, 700, and 950 °C, respectively. The increase in the activation energy with increasing annealing temperature can be explained by the results of traps detected in deep-level transient spectroscopy, where two traps at 0.32 and 0.70 eV are observed in the samples after annealing. The intensity of the trap at 0.32 eV is found to reduce by annealing. By comparing to the result of the x-ray diffraction, we suspect that this trap is related to the lattice-expansion defects. The trap at 0.70 eV is observed only in samples annealed at high temperatures. Since this trap contributes to the high-resistive effect, we believe that it is associated with the nitrogen ions.

Ultrafast and highly sensitive photodetectors fabricated on high-energy nitrogen-implanted GaAs

“…It was also noted that high-energy implantation of N + ions produced a highly resistive material after high-temperature annealing. 9 The aim of this article is to present the preparation and properties of metal-semiconductor-metal (MSM) photodetectors fabricated on high-energy-N + -implanted GaAs and demonstrate the performance improvement of these devices, as compared with those fabricated on low-temperature (LT)-grown GaAs.…”

Origins of luminescence from nitrogen-ion-implanted epitaxial GaAs

“…3(b) and 3(c), an emission at ϳ1.15 eV is also apparent. This emission was also observed by deep level transient spectroscopy measurements in nitrogen-ion-implanted GaAs doses ranging from 1 ϫ 10 12 to 2 ϫ 10 15 cm −2 , 10,11 and is likely related to the implantationinduced E3 defects. 12 Apparently, such defects cannot be fully removed by RTA at 800°C for 30 s.…”

“…This emission is not observed in either the reference or the as-implanted sample, and cannot be accounted for by any native or irradiation-induced defects of GaAs. [8][9][10][11][12] These results strongly suggest that the 1.22-eV emission originates from the GaAsN nanocrystallites in the middle layer. The appearance of this emission in spectra collected with ജ10 keV electrons is likely a result of the broadening of the electron excitation, as shown in Fig.…”

Study of nitrogen incorporation into (In, Ga) as grown by metal organic chemical vapor deposition

“…The other emission peak P2 at a lower energy has higher integrated intensity and broader FWHM than those of band-to-band emission. eliminate the NR centers [20][21][22][23][24] and improve PL intensity of the radiative band gap transitions. However, the effect of annealing differs from one work to another.…”

“…One way to improve the optical properties of the alloys is to anneal the samples. Rapid thermal annealing (RTA) can eliminate some of NR centers from the epitaxially grown materials [20][21][22][23][24] and improve the PL intensity of a band gap transition. However, the effect of annealing differs for different groups.…”