Annealing Effect on Mechanical Stress in Reactive Ion-Beam Sputter-Deposited Silicon Nitride Films

Fourrier, A.; Bosseboeuf, Alain; Bouchier, D.; Gautherin, G.

doi:10.1143/jjap.30.1469

Cited by 19 publications

(7 citation statements)

References 21 publications

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“…24 The elastic modulus at xϭ1.3 is very close to that of bulk Si 3 N 4 ͑249 GPa͒ 23 and is higher than those of LPCVD silicon nitride films reported by Levy et al ͑185 GPa͒, 24 Zhang et al ͑202 GPa͒, 3 and Vlassak et al ͑222 GPa͒. 5,34 In DIBD, ion bombardment is directly applied by the assist ion beam. Figure 5 shows the friction coefficient of the samples against a stainless steel ball surface.…”

Section: A Structure and Compositionsupporting

confidence: 52%

Mechanical and etching properties of dual ion beam deposited hydrogen-free silicon nitride films

Tsang¹,

Ong²,

Chong³

et al. 2001

Journal of Vacuum Science & Technology A: Vacuum, Surfaces,

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Articles you may be interested inEffects of increasing nitrogen concentration on the structure of carbon nitride films deposited by ion beam assisted deposition Mechanical properties and residual stress in AlN/Al mixed films prepared by ion-beam-assisted depositionThe synthesis, characterization, and mechanical properties of thick, ultrahard cubic boron nitride films deposited by ion-assisted sputtering Hydrogen-free silicon nitride (SiN x ) with x varying from 0 to 1.3 were prepared by sputtering a Si target with concurrent nitrogen ion (N 2 ϩ ) assist at an energy of 250 eV. The value of x saturated at 1.3 when the assist N 2 ϩ beam current was higher than 25 mA. As x increases from 0 to 1.3, the hardness of the films increases from 12.2 to 21.5 GPa, the elastic modulus increases from 191 to 256 GPa, the friction coefficient drops from 0.65 to 0.37, the compressive stress rises from Ϫ0.52 to Ϫ1.4 GPa, and the etching rate in buffered hydrofluoric acid increases from a negligible small value to 7 nm min Ϫ1 . Potassium hydroxide does not attack the film at any composition. Ion assist resulted in peening and densification of the film structure, causing the SiN 1.3 films to have high hardness, high stability against oxidation in air, and great compressive stress. Ion bombardment also generated defects, thus giving rise to the moderate etching rate of SiN 1.3 in BHF. The good mechanical and etching properties suggest that dual ion beam deposition SiN x films are potentially useful materials in microelectromechanical devices applications.

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Section: A Structure and Compositionsupporting

confidence: 52%

Mechanical and etching properties of dual ion beam deposited hydrogen-free silicon nitride films

Tsang¹,

Ong²,

Chong³

et al. 2001

Journal of Vacuum Science & Technology A: Vacuum, Surfaces,

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“…The residual stresses of the films were measured by a homemade optical interference apparatus using Newton's ring method. The stress value was calculated from the interference pattern according to the Stoney's equation [31].…”

Section: Methodsmentioning

confidence: 99%

Superhard nanocomposite Ti–Al–Si–N films deposited by reactive unbalanced magnetron sputtering

Jiang

Shen

Zhang

et al. 2006

Materials Science and Engineering: B

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“…α-SiN x always contains a few silicon atomic clusters. To get high optical quality films with lower absorption losses, we used the rapid anneal method in a hydrogen environment to increase film compactness. In Table , the annealing time is 10 min and the hydrogen flow rate is 0.2 sccm.…”

Section: Application On Ld Devicesmentioning

confidence: 99%

Radio Frequency Plasma-Enhanced Reactive Magnetron Sputtering Deposition of α-SiN_x on Photonic Crystal—Laser Diodes for Facet Passivation

Wang

Dong

et al. 2019

ACS Omega

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Amorphous silicon nitride (α-SiNx) films were coated on a photonic crystal-laser diode by the radio frequency magnetron sputtering method. Sputtering deposition conditions were changed to obtain α-SiNx films with different properties. The optical parameters and morphologies of the products were systemically characterized by spectroscopic ellipsometry fitting, energy-dispersive X-ray spectroscopy, atomic force microscopy, and performance of LDs coated with α-SiNx films were tested at 25 °C. Physical mechanisms of sputtering were explained in detail. α-SiNx with a band gap of 4.4 eV and a refractive index of 2.03 at 980 nm were grown. The extinction coefficient equal to 0 at 980 nm, and the surface morphology tended to be homogeneous and dense. The main influencing factors related to the catastrophic optical mirror damage (COMD) phenomenon were investigated. Then plasma pretreatment was implemented to eliminate defects and improve the cavity surface quality and further optimized by measuring the intensity of photoluminescence. Afterward, a rapid annealing method was also carried out to improve coating performance. Finally, α-SiNx acted as a passivation layer in the antireflection film coated on the LD facet, and the COMD threshold increased from 5 to 15.2 W, which led to a higher reliability than nonoptimized LDs and elimination of the COMD phenomenon.

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Annealing Effect on Mechanical Stress in Reactive Ion-Beam Sputter-Deposited Silicon Nitride Films

Cited by 19 publications

References 21 publications

Mechanical and etching properties of dual ion beam deposited hydrogen-free silicon nitride films

Mechanical and etching properties of dual ion beam deposited hydrogen-free silicon nitride films

Superhard nanocomposite Ti–Al–Si–N films deposited by reactive unbalanced magnetron sputtering

Radio Frequency Plasma-Enhanced Reactive Magnetron Sputtering Deposition of α-SiN_x on Photonic Crystal—Laser Diodes for Facet Passivation

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Annealing Effect on Mechanical Stress in Reactive Ion-Beam Sputter-Deposited Silicon Nitride Films

Cited by 19 publications

References 21 publications

Mechanical and etching properties of dual ion beam deposited hydrogen-free silicon nitride films

Mechanical and etching properties of dual ion beam deposited hydrogen-free silicon nitride films

Superhard nanocomposite Ti–Al–Si–N films deposited by reactive unbalanced magnetron sputtering

Radio Frequency Plasma-Enhanced Reactive Magnetron Sputtering Deposition of α-SiNx on Photonic Crystal—Laser Diodes for Facet Passivation

Contact Info

Product

Resources

About

Radio Frequency Plasma-Enhanced Reactive Magnetron Sputtering Deposition of α-SiN_x on Photonic Crystal—Laser Diodes for Facet Passivation