Annealing effect on physical and electrical characteristics of thin HfO2, HfSixOy and HfOyNz films on Si

Effects of post-deposition annealing ambient on Y2O3 gate deposited on silicon by RF magnetron sputtering

“…The combined effects of domain and lattice deformation were considered in W-H approach, in which both were simultaneously operative. The final XRD line broadening (ˇ) is provided by these effects, which is the sum of grain size and lattice deformation: grain size + ˇl attice distortion (6) The contribution of instrument is assumed to be negligible in this relationship, which may be expressed in the form of…”

“…Further scaling of SiO 2 will result in exceptionally high direct tunneling current and increase reliability issue [3][4][5]. Thus, numerous investigations have been performed to substitute the SiO 2 with high dielectric constant (k) materials, such as HfO 2 [6][7][8], Al 2 O 3 [9], ZrO 2 [10,11], CeO 2 [12], Er 2 O 3 [13,14], and Y 2 O 3 [4,. Of these high-k oxides, Y 2 O 3 is considered as one of the potential candidates for substituting SiO 2 due to its fascinating properties, such as large band gap (∼5.5 eV), large conduction band offset (∼2.3 eV), high-k value (k = 15-18), low lattice mismatch and good thermal stability with silicon [4,[15][16][17][18][19].…”

Growth and electrical properties of AlOx grown by mist chemical vapor deposition

“…Therefore, there has been much research about stabilization of the thin film state, such as a post-annealing process after thin film deposition or a mixed alloy with Si, Al, and Y. 4,9,[11][12][13][14][15][16] Among these, Al 2 O 3 has a wide band gap, high breakdown field, and high thermal stability. Also, Al 2 O 3 thin films are used for passivation owing to the low permeability of water and ambient air.…”

Metal-oxide-semiconductor characteristics of lanthanum cerium oxide film on Si

“…In recent years, rapid shrinking of metal-oxide-semiconductor (MOS)-based devices has revealed the physical limit of silicon dioxide (SiO 2 ) as the gate oxide due to rapid increase of tunneling current [1]. This creates serious obstacles to future device reliability and thus stimulates the utilization of high dielectric constant (k) gate oxides to allow equivalent capacitance density in a physically thicker oxide [2].…”