Annealing effect on the electrical properties and microstructure of embedded Ni–Cr thin film resistor

Lai, Lifei; Zeng, Wenjin; Fu, Xian‐Zhu; Sun, Rong; Du, Ruxu

doi:10.1016/j.jallcom.2012.05.102

Cited by 27 publications

(11 citation statements)

References 23 publications

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“…Usually, the Seebeck coefficient of a thin film thermocouple is lower compared to that of a bulk thermocouple since thin films can contain more defects [10]. It is reported for sputtered Ni-Cr thin films that, for example, the electrical resistance and crystallite size change starts during annealing from 250 °C [47,48]. An increase of the thermovoltage and sensitivity is also reported for Pt-Rh/Pt thin film thermocouples when using to vacuum annealing [8].…”

Section: Resultsmentioning

confidence: 99%

Effects of AlN and BCN Thin Film Multilayer Design on the Reaction Time of Ni/Ni-20Cr Thin Film Thermocouples on Thermally Sprayed Al2O3

Tillmann

Kokalj

Stangier

et al. 2019

Sensors

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Thin film thermocouples are widely used for local temperature determinations of surfaces. However, depending on the environment in which they are used, thin film thermocouples need to be covered by a wear or oxidation resistant top layer. With regard to the utilization in wide-slit nozzles for plastic extrusion, Ni/Ni-20Cr thin film thermocouples were manufactured using direct-current (DC) magnetron sputtering combined with Aluminiumnitride (AlN) and Boron-Carbonitride (BCN) thin films. On the one hand, the deposition parameters of the nitride layers were varied to affect the chemical composition and morphology of the AlN and BCN thin films. On the other hand, the position of the nitride layers (below the thermocouple, above the thermocouple, around the thermocouple) was changed. Both factors were investigated concerning the influence on the Seebeck coefficient and the reaction behaviour of the thermocouples. Therefore, the impact of the nitride thin films on the morphology, physical structure, crystallite size, electrical resistance and hardness of the Ni and Ni-20Cr thin films is analysed. The investigations reveal that the Seebeck coefficient is not affected by the different architectures of the thermocouples. Nevertheless, the reaction time of the thermocouples can be significantly improved by adding a thermal conductive top coat over the thin films, whereas the top coat should have a coarse structure and low nitrogen content.

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Section: Resultsmentioning

confidence: 99%

Effects of AlN and BCN Thin Film Multilayer Design on the Reaction Time of Ni/Ni-20Cr Thin Film Thermocouples on Thermally Sprayed Al2O3

Tillmann

Kokalj

Stangier

et al. 2019

Sensors

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“…NiCr alloy is one of the highly important materials because of its low temperature coefficient of resistance, high electrical resistivity, relatively large resistivity and outstanding thermal long-term stability [2,6]. NiCr thin films can be produced on a wide variety of substrates for the deposition of Ni-Cr alloys, such as stainless steel, silicon wafer, glass ceramic, and polymers like polyimide [7]. Ni-Cr alloys on the above mentioned substrates have been widely used as a sensor or chip resistor for common integrated circuits [7].…”

Section: Introductionmentioning

confidence: 99%

“…NiCr thin films can be produced on a wide variety of substrates for the deposition of Ni-Cr alloys, such as stainless steel, silicon wafer, glass ceramic, and polymers like polyimide [7]. Ni-Cr alloys on the above mentioned substrates have been widely used as a sensor or chip resistor for common integrated circuits [7]. Physical and chemical properties of NiCr thin films depend on the formation conditions used in the deposition environment [5].…”

Section: Introductionmentioning

confidence: 99%

Synthesis and Investigation of the Structure and Optical Properties of Nano -Ni-Cr Films

Awadh

2020

eijs

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The thermal evaporation technique was used to prepare the Ni-Cr films with a thickness of 200 nm and a rate of deposition of 0.22nm/Sec. The annealing was performed at 373 and 473 K. The structural and optical analyses of the grown layers were achieved and XRD patterns showed amorphous structure transferred to polycrystalline for film annealed at 373 and 473 K. AFM analysis showed that the surface of Ni-Cr films is homogenous and the average roughness, optical energy gap and absorption coefficient were increased with increasing annealing temperature (Ta).

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“…The need for appropriate properties—such as high sheet resistance, low-temperature coefficient of resistance, and stability under ambient conditions—has motivated investigations into electronic conduction mechanisms in a number of ceramal [1,2] and alloy resistor systems [3,4]. In IC fabrication technologies, resistors can be implemented by using diffusion methods fabricated in the base and emitter regions of bipolar transistors, or in the source/drain regions of a CMOS, or by depositing thin films on the surfaces of wafers.…”

Section: Introductionmentioning

confidence: 99%

Developments of the Physical and Electrical Properties of NiCr and NiCrSi Single-Layer and Bi-Layer Nano-Scale Thin-Film Resistors

Cheng

Chen

et al. 2016

Nanomaterials

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In this study, commercial-grade NiCr (80 wt % Ni, 20 wt % Cr) and NiCrSi (55 wt % Ni, 40 wt % Cr, 5 wt % Si) were used as targets and the sputtering method was used to deposit NiCr and NiCrSi thin films on Al2O3 and Si substrates at room temperature under different deposition time. X-ray diffraction patterns showed that the NiCr and NiCrSi thin films were amorphous phase, and the field-effect scanning electronic microscope observations showed that only nano-crystalline grains were revealed on the surfaces of the NiCr and NiCrSi thin films. The log (resistivity) values of the NiCr and NiCrSi thin-film resistors decreased approximately linearly as their thicknesses increased. We found that the value of temperature coefficient of resistance (TCR value) of the NiCr thin-film resistors was positive and that of the NiCrSi thin-film resistors was negative. To investigate these thin-film resistors with a low TCR value, we designed a novel bi-layer structure to fabricate the thin-film resistors via two different stacking methods. The bi-layer structures were created by depositing NiCr for 10 min as the upper (or lower) layer and depositing NiCrSi for 10, 30, or 60 min as the lower (or upper) layer. We aim to show that the stacking method had no apparent effect on the resistivity of the NiCr-NiCrSi bi-layer thin-film resistors but had large effect on the TCR value.

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Annealing effect on the electrical properties and microstructure of embedded Ni–Cr thin film resistor

Cited by 27 publications

References 23 publications

Effects of AlN and BCN Thin Film Multilayer Design on the Reaction Time of Ni/Ni-20Cr Thin Film Thermocouples on Thermally Sprayed Al2O3

Effects of AlN and BCN Thin Film Multilayer Design on the Reaction Time of Ni/Ni-20Cr Thin Film Thermocouples on Thermally Sprayed Al2O3

Synthesis and Investigation of the Structure and Optical Properties of Nano -Ni-Cr Films

Developments of the Physical and Electrical Properties of NiCr and NiCrSi Single-Layer and Bi-Layer Nano-Scale Thin-Film Resistors

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