Annealing effects in the PECVD SiO2 thin films deposited using TEOS, Ar and O2 mixture

Viana, C.E.; Morimoto, Nilton Itiro; Bonnaud, Olivier

doi:10.1016/s0026-2714(99)00288-7

Cited by 22 publications

(7 citation statements)

References 6 publications

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“…[ 15,20 ] Ar admixture supports fragmentation, oxidation, and deposition of less dense SiOx at moderate ion bombardment conditions. [ 54 ] Such films have a specific density of 1.9 ± 0.1 g cm −3 with a chemical composition of SiO 1.9‐2.0 C 0.4‐0.5 indicating residual hydrocarbons. Note that the CH content does not simply replace O in Si–O–Si by –CH 2 groups.…”

Section: Resultsmentioning

confidence: 99%

Nanoporous SiOx plasma polymer films as carrier for liquid‐infused surfaces

Gergs

Monti

Gaiser

et al. 2022

Plasma Processes & Polymers

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Liquid-infused surfaces are based upon the infusion of a liquid phase into a porous solid material to induce slippery and repellent character. In this context, porous SiOx plasma polymer films represent a relevant candidate for a robust nanoporous carrier layer. Intermittent low-pressure plasma etching of O 2 /hexamethyldisiloxane-derived coatings is investigated to enhance the intrinsic porosity inherent to residual hydrocarbons in the silica matrix. Simulations of the resulting Si-O ring network structure using reactive molecular dynamics indicate formation of interconnected voids with Si-OH functionalized pore walls allowing water penetration with almost Fickian diffusive behavior. The corresponding porosity of up to 18%, well agreeing with simulations, Fourier-transform infrared spectroscopy, and ellipsometry measurements, was found to be suitable for the liquid infusion of polyethylene glycol molecules into about 80 nm thick SiOx films providing ongoing lubricating properties, thus revealing their suitability as liquid-infused surfaces.

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Section: Resultsmentioning

confidence: 99%

Nanoporous SiOx plasma polymer films as carrier for liquid‐infused surfaces

Gergs

Monti

Gaiser

et al. 2022

Plasma Processes & Polymers

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“…As shown in Figure 1a, the TMS monomer reacted with the oxygen gas, resulting in several additional emission lines other than the transition lines determined from the pure oxygen plasma shown in the inset figure. The emission lines at about 558, 777, and 844 nm were relevant to the transition lines of the oxygen atoms (O) or ions (O 2 + ) [15,16]. The emission lines at about 450, 482, and 518 nm were related to the carbon-containing species of CO [16,17], whereas the emission peak at about 655 nm was assigned as the atomic emission of excited H α [18,19].…”

Section: Resultsmentioning

confidence: 99%

Impact on the Gas Barrier Property of Silicon Oxide Films Prepared by Tetramethylsilane-Based PECVD Incorporating with Ammonia

Liu

Chen

et al. 2017

Applied Sciences

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Abstract:The gas barrier property of a silicon oxide (SiO x ) film synthesized from plasma-enhanced chemical vapor deposition using the tetramethysilane (TMS)-oxygen gas mixture was modified by introducing ammonia gas in the glow discharge. The change in the glow discharge with the ammonia gas incorporation was monitored by an optical emission spectrometer (OES). Structures, chemical bond configurations, and material properties of the resulting films were investigated. The introduced ammonia gas in the TMS-oxygen plasma resulted in emission lines dominated by the N 2 and CN species with the suppression of the OH and oxygen-related radicals, thereby introducing nitrogen and carbon atoms in the deposited film. A silicon oxynitride (SiO x N y ) film had the best surface morphology and the lowest residual internal stress was achievable by controlling the reactant gas flow ratio of the ammonia and oxygen. The barrier property to the water vapor permeation of the silicon oxide film (~1.65 g/m 2 /day) deposited onto the polyethylene terephthalate (PET) substrate was thus greatly improved to 0.06 g/m 2 /day for the film synthesized from an adequate TMS-oxygen-ammonia gas mixture.

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“…2,4,6,9,10,13 The bulk carbon concentration near the thermal oxide/ TEOS interface was primarily a function of the deposited film thickness as shown in Fig. The increasing oxygen diffusivity and interfacial carbon oxidation rate as a function of annealing temperature did not suffice to overcome the combined effect of the higher interfacial carbon concentration and increased film thickness.…”

Section: Resultsmentioning

confidence: 99%

Effect of film thickness and annealing temperature on the carbon induced interfacial charge of tetraethoxyorthosilicate based oxide films on p-type Si(100)

Torres

Khazi-Syed

2005

Journal of Vacuum Science &Amp; Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

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Articles you may be interested inLow temperature direct bonding mechanisms of tetraethyl orthosilicate based silicon oxide films deposited by plasma enhanced chemical vapor deposition J. Appl. Phys. 112, 063501 (2012); 10.1063/1.4752258 H-induced effects in luminescent silicon nanostructures obtained from plasma enhanced chemical vapor deposition grown Si y O 1 − y : H ( y > 1 ∕ 3 ) thin films annealed in ( Ar + 5 % H 2 ) Annealing and oxidation of silicon oxide films prepared by plasma-enhanced chemical vapor deposition J. Appl. Phys. 97, 014913 (2005); 10.1063/1.1829789Effect of nitrogen containing plasmas on interface stability of hafnium oxide ultrathin films on Si ( 100 ) Appl. Phys. Lett.

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Annealing effects in the PECVD SiO2 thin films deposited using TEOS, Ar and O2 mixture

Cited by 22 publications

References 6 publications

Nanoporous SiOx plasma polymer films as carrier for liquid‐infused surfaces

Nanoporous SiOx plasma polymer films as carrier for liquid‐infused surfaces

Impact on the Gas Barrier Property of Silicon Oxide Films Prepared by Tetramethylsilane-Based PECVD Incorporating with Ammonia

Effect of film thickness and annealing temperature on the carbon induced interfacial charge of tetraethoxyorthosilicate based oxide films on p-type Si(100)

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