Effect of film thickness and annealing temperature on the carbon induced interfacial charge of tetraethoxyorthosilicate based oxide films on p-type Si(100)

Abstract

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Characterization of interface charge traps in PE-TEOS and HDP oxide with different annealing temperatures using time-dependent second-harmonic generation

“…It has been reported that it is possible to alter the electrical properties of the interface by changing the interfacial charge concentration of TEOS-based oxide films on silicon [13][14][15]. Carbon is routinely introduced into the deposited oxide film due to the organic nature of the TEOS molecule.…”

The effect of nanoparticles on rough surface adhesion

“…37 Torres et al reported bulk and interfacial carbon concentrations in TEOS films before and after annealing in oxygen at 1070°C. 38 The bulk carbon concentration before anneal was 6 ϫ 10 18 cm −3 . The bulk carbon concentration in a 1 m thick layer after anneal decreased to 2.2ϫ 10 18 cm −3 , while the interfacial carbon concentration increased to 1.5ϫ 10 21 cm −3 .…”

Caracterização de filmes finos de óxido de silício depositados em um reator HD-PECVD a partir de TEOS a ultra baixa temperatura.

“…Nas curvas, são observados picos característicos de espécies OH na região compreendida entre 3500 e 3800 cm -1[40],[41]. A presença destas espécies reforça o fato da incorporação de subprodutos de TEOS durante a deposição dos filmes.…”