Annealing effects on opto-electronic properties of sputtered and thermally evaporated indium-tin-oxide films

Morgan, D. V.; Aliyu, Y.H.; Bunce, R.W.; Salehi, Alireza

doi:10.1016/s0040-6090(97)00733-5

Cited by 96 publications

(47 citation statements)

References 8 publications

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“…Because applying a heat treatment to the nanocomposite films is an important step in developing the quantum dot, as discussed in section 3.3, it is necessary to understand the influence that temperature can have on the properties of ITO [12][13][14][15]. The two most prominent reactions that occur in ITO films during thermal anneals are grain growth and oxygen diffusion into the films, both of which can have pronounced effects on the resulting electrical and optical properties.…”

Section: Materials Selectionmentioning

confidence: 99%

“…This happens because of a rapid grain growth process that occurs at these temperatures, removing any absorbing defects. As this process takes place, the conductivity is also greatly increased as the rapid grain growth spurs an increase in the oxygen vacancy concentration [12]. Because oxygen vacancies are so vital to the film's conductivity, it is important to note that the atmospheric partial pressure of oxygen inside the furnace can profoundly affect the resistivity.…”

Section: Materials Selectionmentioning

confidence: 99%

“…Given all of the data published on ITO films and the effects that various parameters, such as deposition method, dopant concentrations, and temperature, have on the resulting electrical and optical properties, it is important to understand these effects [7,[10][11][12][13][14][15][16][17][18][19][20][21][22][23][24][25]. In the case of this research, ITO was chosen because of its superior conductivity and high transparency region.…”

Section: Materials Selectionmentioning

confidence: 99%

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Final report

Simmons¹,

Bukowski²

2002

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This grant was a continuation of research conducted at the University of Florida under Grant No. in which we investigated the energy bandgap shifts produced in semiconductor quantum dots of sizes between 1.5 and 40 nm. The investigated semiconductors consisted of a series of Column 2-6 compounds (CdS, CdSe, CdTe) and pure Column IV elements (Si and Ge). It is well-known of course that the 2-6 semiconductors possess a direct-gap electronic structure, while the Column IV elements possess an indirect-gap structure. The investigation showed a major difference in quantum confinement behavior between the two sets of semiconductors. This difference is essentially associated with the change in bandgap energy resulting from size confinement. In the direct-gap semiconductors, the change in energy (blue shift) saturates when the crystals approach 2-3 nm in diameter. This limits the observed shift in energy to less than 1 eV above the bulk value. In the indirect-gap semiconductors, the energy shift does not show any sign of saturation and in fact, we produced Si and Ge nanocrystals with absorption edges in the UV. The reason for this difference has not been determined and will require additional experimental and theoretical studies. In our work, we suggest, but do not prove that mixing of conduction band side valleys with the central valley under conditions of size confinement may be responsible for the saturation in the blue-shift of direct-gap semiconductors.The discovery of large bandgap energy shifts with crystal size prompted us to suggest that these materials may be used to form photovoltaic cells with multi-gap layers for high efficiency in a U.S. Patent issued in 1998. However, this possibility depends strongly on the ability to collect photoexcited carriers from energy-confined crystals. The research conducted at the University of Arizona under the subject grant had a major goal of testing an indirect gap semiconductor in size-confined structures to determine if photocarriers could be collected. Thus, we tested a variety of semiconductor-glass nano-composite structures for photoconductivity. Tests were conducted in collaboration with the Laser Physics Division at Sandia National Laboratories.Nano-composite samples were formed consisting of Ge nanocrystals embedded in an indium-tinoxide matrix. Photoconductivity measurements were conducted with exposure of the films to 2 sub-bandgap and super-bandgap light. The results showed a clear photoconductivity effect arising from exposure to super-bandgap light only. These results suggest that the high-efficiency photovoltaic cell structure proposed in DOE sponsored U.S. Patent 5,720,827 is viable. The results of fabrication studies, structural characterization studies and photovoltaic measurements are presented in the report.This report is taken from a PhD dissertation of Tracie J.

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Section: Materials Selectionmentioning

confidence: 99%

Section: Materials Selectionmentioning

confidence: 99%

Section: Materials Selectionmentioning

confidence: 99%

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Final report

Simmons¹,

Bukowski²

2002

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“…Для получения прозрачных и про-водящих пленок ITO используют в основном два способа нанесе-ния: магнетронное распыление и электронно−лучевое испарение. В работах [1,8] было показано, что магнетронное распыление создает дефекты кристаллической струк-туры в подложке, существенно повышающие контактное сопро-тивление. Напротив, пленки, по-лученные электронно−лучевым испарением, не портили поверх-ность полупроводника, но после нанесения были непрозрачны и имели высокое удельное сопро-тивление [1,2,8].…”

Section: Introductionunclassified

Peculiarity of Forming Transparent Conducting Films on Basis of Oxides Indium-Tin for Contacts on Gan-Based Light Emitting Diodes

Ванюхин¹,

Zakharchenko²,

Каргин³

et al. 2015

Izv. vysš. učebn. zaved., Mater. èlektron. teh.

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“…A current spreading layer fabricated from a transparent conductor of low sheet resistance is therefore employed in all high efficiency devices in order to spread current throughout the p-cladding region of the LED and increase the current-injected area without having to increase the size or geometry of the contact. Practical current spreading layers composed of AlGaAs, 6 GaP 7 and indium tin oxide 8 ͑ITO͒ have been realized.…”

Section: Introductionmentioning

confidence: 99%

Theoretical and experimental analysis of current spreading in AlGaInP light emitting diodes

Perks

Porch

Морган

et al. 2006

Journal of Applied Physics

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The profile of light emission from aluminum gallium indium phosphide ͑AlGaInP͒ light emitting diodes has been studied and compared with the theoretical modeling of current spreading using a lossy transmission line model of current injected into the active region. Discrepancies between the experimentally determined emission profile and the theoretically predicted current injected into the active region have been analyzed and explained using a Monte Carlo ray tracing simulation which considers the trajectories of the photons after leaving the active region and the particular geometry of the device current, die size, and current spreading layer resistance upon the emitted emission profile. The combination of the current spreading and ray tracing models give very good agreement with the experimental emission profiles for both thin and thick current spreading layers.

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Annealing effects on opto-electronic properties of sputtered and thermally evaporated indium-tin-oxide films

Cited by 96 publications

References 8 publications

Final report

Final report

Peculiarity of Forming Transparent Conducting Films on Basis of Oxides Indium-Tin for Contacts on Gan-Based Light Emitting Diodes

Theoretical and experimental analysis of current spreading in AlGaInP light emitting diodes

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