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In this paper the effectiveness of indium tin oxide (ITO) is assessed as a current spreading layer (CSL) for AlGaInP visible light emitting diodes (LEDs). A range of device structures has been fabricated in order to test the CSL characteristics. As a basis for this comparison test devices have been fabricated both with and without any ITO spreading layers and for comparison with an alternative GaP spreading layer. These measurements confirm that ITO is an effective alternative to the GaP structure with greater potential for applications in low-cost LED arrays.

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Indium‐tin‐oxide (ITO) is a wide band gap degenerately doped semiconductor which forms a rectifying heterojunction with GaAs. The interface exhibits electrical characteristics which parallel those of conventional metal/semiconductor Schottky diodes. The combination of properties — high visible transparency and high electrical conductivity — opens up interesting electro‐optical applications for the material. New results are presented on the transport mechanism in ITO layers and the ITO/GaAs interface. Thermal stressing of ITO/GaAs shows that the basic system degrades at relatively low temperatures. The mechanism of degradation is the near interface n+ doping of GaAs by the interdiffusion of Sn and/or In from the ITO into GaAs. These results have important consequences for device applications such as solar cells which operate at temperatures in excess of 100 °C.