Annealing Heat Treatment of ZnO Nanoparticles Grown on Porous Si Substrate Using Spin-Coating Method

Eswar, Kevin Alvin; Rouhi, Jalal; Husairi, H. F.; Rusop, M.; Abdullah, Saifollah

doi:10.1155/2014/796759

Cited by 41 publications

(19 citation statements)

References 22 publications

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“…The average surface roughness of nanostructured film is increased at 400 °C due to non-uniformity of ZnO nanoparticles size. At annealing temperature of 500 °C, the crystalline quality increases due to the atom arrangements being in favourable position and therefore making the average surface roughness decrease [18]. Besides, the size of ZnO nanoparticles was more uniform at this annealing temperature as seen in FESEM images.…”

Section: Introductionmentioning

confidence: 77%

Seeded Porous Silicon Preparation as a Substrate in the Growth of ZnO Nanostructures

Eswar

Lepit²,

Rasmidi³

et al. 2015

AMM

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In this work, seeded porous silicon (PSi) was used as a substrate in the growth of ZnO nanostructures. PSi was prepared by electrochemical etching method. ZnO thin films as seeded were deposited via sol-gel spin coating method. ZnO nanostructures were grown on seeded PSi using hydrothermal immersion method. In order to study the effect of post-heat treatment on the substrate, post annealing temperature were varied in the range of 300 to 700 °C. The FESEM results shows ZnO thin film composed of nanoparticles were distributed over the PSi surface. Based on AFM characterization, the smoothest surface was produced at post annealing temperature of 500 °C. There are two different peaks appeared in PL characterization. The peak in near-UV range is belonging to ZnO thin films while a broad peak in visible range can be attributed to ZnO defects and PSi surface. In addition, FESEM, XRD and PL were used to characterize the ZnO nanostructures. The FESEM results revealed ZnO nano-flower were successfully grown on seeded PSi. Hexagonal wurtzite of ZnO with dominated by the plane (100), (002), and (101) was found by XRD characterization. Two different peaks in UV range and visible range can be attributed to ZnO nano-flower and various defects of ZnO, respectively.

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Section: Introductionmentioning

confidence: 77%

Seeded Porous Silicon Preparation as a Substrate in the Growth of ZnO Nanostructures

Eswar

Lepit²,

Rasmidi³

et al. 2015

AMM

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show abstract

“…Table 1 shows the plane distance, d and crystallite size, D in different annealing temperature. Plane distance of each plane in was calculated by Bragg's formula in Equation (1). Besides, an estimation of crystalline size, D based on plane distance for each plane is also calculated using Equation (2).…”

Section: Resultsmentioning

confidence: 99%

“…Zinc oxide (ZnO) is one of them. It becomes popular due to properties of a large exciton binding energy of 60 meV and and a wide band gap (E g ) of 3.37 eV [1]. In addition, good chemical and thermal stability, non-toxic material and high transparency in room temperature are additional advantages in devices fabrication [2].…”

Section: Introductionmentioning

confidence: 99%

Structural Studies of Zno Nanostructures on Porous Silicon: Effect of Post-Annealing Temperature

Eswar

Suhaimi

Guliling

et al. 2018

IJET

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ZnO Nanostructures have been successfully deposited on of Porous silicon (PSi) via wet colloid chemical approach. PSi was prepared by electrochemical etching method. ZnO/PSi thin films were annealed in different temperature in the range of 300 °C to 700 °C. Surface morphology studies were conducted using field emission scanning microscopy (FESEM). Flower-like structures of ZnO were clearly seen at annealing temperature of 500 °C. The X-ray diffraction spectra (XRD) have been used to investigate the structural properties. There are three dominant peaks referred to plane (100), (002) and (101) indicates that ZnO has a polycrystalline hexagonal wurtzite structures. Plane (002) shows the highest intensities at annealing temperature of 500 °C. Based on plane (002) analysis, the sizes were in range of 30.78 nm to 55.18. In addition, it was found that the texture coefficient of plane (002) is stable compared to plane (100) and (101).

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“…The average diameter of the ZnO nanopowder increases from 408nm to 451nm when the annealing temperature is raised from 300°C to 400°C. This can be due to thermal expansion, in which the kinetic energy of the atoms increases as the annealing temperature rises [47]. But the average diameter of the ZnO nanopowder decreases to 367nm at 500°C and 359nm at 600°C.…”

Section: Surface Morphologymentioning

confidence: 99%

Effects of Thermal Annealing on The Morphology and Structural Characteristics of Zinc Oxide Nanopowders for Triboelectric Nanogenerator Applications

Kamaruzaman

Mamat

Ariffin

et al. 2022

ARFMTS

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The influence of thermal annealing on the surface morphologies and structural characteristics of zinc oxide (ZnO) nanopowders synthesized via the solution immersion method for triboelectric nanogenerator applications is reported in this paper. The ZnO nanopowders were thermally treated at different temperatures of annealing in the ranges between 300°C to 700°C for 1 hour, and their surface morphologies and structural properties were studied using field emission scanning electron microscopy (FESEM) and X-ray diffraction (XRD) analysis. The ZnO nanopowders have a polycrystalline, hexagonal wurtzite structure and are composed of ZnO nanoparticles and hexagonal nanorods. ZnO based tribolectric nanogenerators were fabricated with these nanopowders and their performance was assessed in terms of the output voltage. It is found that the ZnO based triboelectric nanogenerator fabricated with ZnO nanopowders annealed at 500°C has superior performance compared with the other nanogenerators, with an average output voltage of 1.95 V. This corresponds to a fourfold increase in output voltage relative to that of the ZnO based triboelectric nanogenerator fabricated with as-deposited ZnO nanopowders. In conclusion, thermal annealing significantly influences particle size and crystallinity of ZnO nanopowders, which in turn, influences the output voltage of ZnO based triboelectric nanogenerators.

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Annealing Heat Treatment of ZnO Nanoparticles Grown on Porous Si Substrate Using Spin-Coating Method

Cited by 41 publications

References 22 publications

Seeded Porous Silicon Preparation as a Substrate in the Growth of ZnO Nanostructures

Seeded Porous Silicon Preparation as a Substrate in the Growth of ZnO Nanostructures

Structural Studies of Zno Nanostructures on Porous Silicon: Effect of Post-Annealing Temperature

Effects of Thermal Annealing on The Morphology and Structural Characteristics of Zinc Oxide Nanopowders for Triboelectric Nanogenerator Applications

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