2018
DOI: 10.1134/s1063782618140178
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Annealing of FIB-Induced Defects in GaAs/AlGaAs Heterostructure

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Cited by 3 publications
(2 citation statements)
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“…Surface recombination can be minimized through oxide removal and surface passivation, achievable through etching at sufficiently low ion energy to remain in the ion-assisted chemical etching regime [41][42][43]. For this reason, the sample was immersed in a hydrochloric acid bath to remove the surface oxide, and then 8nm of Al 2 O 3 were deposited via atomic layer deposition [44][45][46][47] (ALD) at 300°C [48] (see Supplementary Material). The observed emission intensities in the three cases along with the gap size and excitonic fraction are shown in Fig.…”
Section: Resultsmentioning
confidence: 99%
See 1 more Smart Citation
“…Surface recombination can be minimized through oxide removal and surface passivation, achievable through etching at sufficiently low ion energy to remain in the ion-assisted chemical etching regime [41][42][43]. For this reason, the sample was immersed in a hydrochloric acid bath to remove the surface oxide, and then 8nm of Al 2 O 3 were deposited via atomic layer deposition [44][45][46][47] (ALD) at 300°C [48] (see Supplementary Material). The observed emission intensities in the three cases along with the gap size and excitonic fraction are shown in Fig.…”
Section: Resultsmentioning
confidence: 99%
“…the surface with 8nm of Al 2 O 3 conformal layer right after the acid step. The sample was placed in a Oxford FlexAl-Plasma Enhanced Atomic Layer Deposition and kept for 10 minutes at a temperature of 300°C before starting the deposition [48]. The alumina layer was conformally grown all over the sample to reduce the nonradiative recombination rate at the GaAs grating sidewalls [44,46,47].…”
Section: Fabrication and Post-processingmentioning
confidence: 99%