Annealing of radiation-compensated silicon carbide

The radiation hardness of silicon carbide with respect to electron and proton irradiation and its dependence on the irradiation temperature are analyzed. It is shown that the main mechanism of SiC compensation is the formation of deep acceptor levels. With increasing the irradiation temperature, the probability of the formation of these centers decreases, and they are partly annealed out. As a result, the carrier removal rate in SiC becomes ~6 orders of magnitude lower in the case of irradiation at 500 °C. Once again, this proves that silicon carbide is promising as a material for high-temperature electronics devices.

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Annealing of radiation-compensated silicon carbide

Cited by 2 publications

References 11 publications

A study of the effect of electron and proton irradiation on 4H-SiC device structures

A study of the effect of electron and proton irradiation on 4H-SiC device structures

Radiation Hardness of Silicon Carbide upon High-Temperature Electron and Proton Irradiation

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