Annealing process for recovery of carbonated (Mg,Ca)O protective layer for plasma discharge device

Abstract

The carbonation behavior and decarbonation annealing of a protective (Mg,Ca)O layer for flat panel plasma discharge devices were investigated. Compared with a conventional MgO protective layer, the (Mg,Ca)O protective layer showed both high and low discharge voltages. Quantitative X-ray photoelectron spectroscopy analyses indicated that the high discharge voltages were caused by Ca carbonation. The progression of Ca carbonation was enhanced by exposure to air containing H 2 O but not by exposure to dry air. In addition, once (Mg,Ca)O is carbonated, it is impossible to decarbonate Ca by annealing in air at the temperature applied during the production process. We propose the use of annealing in vacuum as an effective method to promote the decarbonation of Ca and maintain a low discharge voltage for plasma discharge devices with (Mg,Ca)O protective layers.

Mechanisms for the degradation of phosphor excitation efficiency by short wavelength vacuum ultraviolet radiation in plasma discharge devices

“…A (Mg,Ca)O film with a thickness of 800 nm was deposited on the dielectric layer of the front panel of each experimental unit by electron beam evaporation, so as to form a protective layer. (Mg,Ca)O is the most promising material for protective layers in devices having high Xe concentrations in the discharge gas (so as to achieve both increased VUV radiation generation efficiency and low discharge voltages) because the ion-induced secondary electron emission of this material is greater than that of the more conventional MgO [23,24,25,26]. During the deposition process, the substrate was maintained at 350 • C and O 2 gas was continuously flowed into the chamber at 20 sccm.…”

Nonperturbative Generation of Harmonics by Nanometer-Scale Localized Electronic States on the Surface of Bulk Materials and Nano-Films

“…The band-gap structures of these are shown in Figure 2b with the excitation processes. The parameters of the band structures are taken from [40][41][42][43][44][45][46]. The laser to drive the HH generation was a Ti:sapphire oscillator delivering 28 fs ultrashort pulses at 0.8 µm wavelength at 108 MHz repetition rate.…”