Annealing temperature‐dependent piezoelectric properties of Bi_3.15Nd_0.85Ti₃O₁₂ ferroelectric thin films

Abstract

Annealing temperature-dependent (ATD) microstructure, ferroelectric, dielectric, and piezoelectric properties of Bi 3.15 Nd 0.85 Ti 3 O 12 (BNT) thin films by metal-organic decomposition method were investigated in detail. The relative permittivity e r (702) at 1 kHz, the spontaneous polarization 2P s (72 mC/cm 2 ), and the effective piezoelectric coefficient d 33 (62 pm/V) under the amplitudes of the bipolar driving field 320 and 280 kV/cm are the best for BNT thin film annealed at 700 8C. The 2P s and e r moderated by annealing temperature are responsible for ATD piezoelectric properties according to phenomenologic equation. The results show BNT is a promising candidate for piezoelectric thin film devices.