Annihilation mechanism of V-shaped pits in c-GaN grown by hydride vapor-phase epitaxy

Iso, Kenji; Ikeda, Hirofumi; Gouda, Riki; Mochizuki, Tae; Izumisawa, Satoru

doi:10.7567/1347-4065/ab0402

Cited by 3 publications

(2 citation statements)

References 29 publications

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“…They were holes in the HVPE seed that closed early in the NEAT growth. The ability of the NEAT growth to close holes is a clear advantage over HVPE, where holes grow larger with time, limiting the run time and growth thickness [28]. Holes in the substrate cause problems during device fabrication, and substrates with holes are sold at a lower price tier.…”

Section: Growth and Characterization Of 4 Bulk Gan Crystalmentioning

confidence: 99%

Progress in Near-Equilibrium Ammonothermal (NEAT) Growth of GaN Substrates for GaN-on-GaN Semiconductor Devices

2022

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This paper reviews the near-equilibrium ammonothermal (NEAT) growth of bulk gallium nitride (GaN) crystals and reports the evaluation of 2″ GaN substrates and 100 mmbulk GaN crystal grown in our pilot production reactor. Recent progress in oxygen reduction enabled growing NEAT GaN substrates with lower residual oxygen, coloration, and optical absorption. The oxygen concentration was approximately 2 × 1018 cm−2, and the optical absorption coefficient was 1.3 cm−1 at 450 nm. Maps of full-width half maximum (FWHM) of X-ray diffraction rocking curveswere generated for grown crystals and finished wafers. The X-ray rocking curve maps confirmed high-quality and uniform microstructure across the entire surface of the bulk crystals and substrates. The average FWHM of the 50 best bulk crystals from the recent batch was 28 ± 4 arcsec for the 002 diffraction and 34 ± 5 arcsec for the 201 diffraction, with an average radius of curvature of 20 m. X-ray topography measured on both sides of the bulk crystals implied that the density of dislocations wasreduced by one order of magnitude during the NEAT growth. A typical NEAT GaN substrate shows dislocation density of about 2 × 105 cm−2.

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Section: Growth and Characterization Of 4 Bulk Gan Crystalmentioning

confidence: 99%

Progress in Near-Equilibrium Ammonothermal (NEAT) Growth of GaN Substrates for GaN-on-GaN Semiconductor Devices

2022

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“…This differs from HVPE growth where once holes appear, they get larger with increasing growth thickness which in turn limits how thick HVPE material can practically be grown. 29) The presence of holes can make a substrate unusable by device makers and is used as a primary differentiator between substrate pricing grades. The ability of the NEAT method to eliminate these holes is a clear advantage.…”

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Assessment of dislocation reduction on 100 mm diameter bulk GaN grown by the NEAT method

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Jordan

Letts

et al. 2022

Jpn. J. Appl. Phys.

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X-ray topography measurements on a 100 mm diameter GaN boule grown by the Near Equilibrium AmmonoThermal (NEAT) method revealed an improvement in dislocation density from >1 x 106 cm-2 to between 2 × 105 and 5 × 105 cm-2, an improvement greater than two to five times from seed to growth. This data builds on previous x-ray diffraction and defect selective etching to quantify the reduction in defect density that is closely associated with increasing growth thickness. This result indicates that there is a pathway to further dislocation reduction by increasing growth thickness for GaN crystals including those of 100 mm or larger diameter. Further reduction of the dislocation density of large-area substrates will lead to GaN power devices with reduced leakage current under reverse bias and better device performance.

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Growth behavior and stress distribution of bulk GaN grown by Na-flux with HVPE GaN seed under near-thermodynamic equilibrium

Liu

et al. 2022

Applied Surface Science

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Annihilation mechanism of V-shaped pits in c-GaN grown by hydride vapor-phase epitaxy

Cited by 3 publications

References 29 publications

Progress in Near-Equilibrium Ammonothermal (NEAT) Growth of GaN Substrates for GaN-on-GaN Semiconductor Devices

Progress in Near-Equilibrium Ammonothermal (NEAT) Growth of GaN Substrates for GaN-on-GaN Semiconductor Devices

Assessment of dislocation reduction on 100 mm diameter bulk GaN grown by the NEAT method

Growth behavior and stress distribution of bulk GaN grown by Na-flux with HVPE GaN seed under near-thermodynamic equilibrium

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