Anodization of Al3Zr intermetallic compound film and its application to the preparation of thin-film capacitors with high reliability

Inada, H.; Yamane, Masayuki; Sasaki, Katsutaka; Abe, Yoshio; Kawamura, Midori; Yanagisawa, Hideto

doi:10.1002/1520-6432(200007)83:7<1::aid-ecjb1>3.0.co;2-3

Cited by 3 publications

(2 citation statements)

References 6 publications

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“…Though methods for anodization of thin-film metals or intermetallics such as Al, [11] Ta, [12] TiN, [13] Ni, [14] and Al 3 Zr [15] have been reported, to our knowledge the anodization of Ti-metal thin films to obtain nanotube arrays has not. Using the techniques described herein, we are able to fabricate titania nanotube-array films with any residual metal underneath the nanotubes completely eliminated.…”

Section: Introductionmentioning

confidence: 61%

Transparent Highly Ordered TiO2 Nanotube Arrays via Anodization of Titanium Thin Films

et al. 2005

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Titanium thin films, 400 nm to 1000 nm thick, fabricated by radio frequency (rf) sputter deposition are anodized in an electrolyte containing acetic acid and hydrofluoric acid to form optically transparent films of highly ordered titania nanotube arrays. Real‐time monitoring of the anodization current, at a fixed potential, is used to controllably eliminate the Ti layer underneath the titanium oxide nanotube array without disturbing the architecture. Fabrication variables critical to achieving the transparent nanotube‐array film include annealing temperature of the anodized, initially amorphous nanotube array and Ti‐film sputter deposition variables, including rate, film thickness, and substrate temperature. Structural investigations on the transparent nanotube arrays reveal only the presence of the anatase phase even after annealing at 500 °C. In contrast, both rutile and anatase phases were observed in films with a metal layer underneath the nanotubes and annealed in an oxygen ambient above 430 °C. Rutile growth occurs at the nanotube–metal interface as metal oxidation takes place during annealing. The average refractive index of the transparent nanotube‐array film is found to be 1.66 in the UV‐vis range, with a calculated porosity of 67 %; the bandgap is determined as 3.34 eV, with a bandgap tail extending to 2.4 eV.

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Section: Introductionmentioning

confidence: 61%

Transparent Highly Ordered TiO2 Nanotube Arrays via Anodization of Titanium Thin Films

et al. 2005

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“…[10][11][12] However, the capacitor properties and leakage current characteristics of anodized Zr-Al capacitors have not yet been investigated sufficiently, except for one fabricated using an Al 3 Zr intermetallic compound film. 13) In this study, we investigated the fundamental capacitor properties, such as capacitance density (C), dissipation factor (tan ), TCC, and leakage current mechanism, of a Zr-Al thin film capacitor prepared by anodic oxidation. In addition, we examined the cause of thermal degradation observed above 350 C from the compositional depth profiles obtained by Auger electron spectroscopy (AES).…”

Section: Introductionmentioning

confidence: 99%

Preparation of Thin-Film Capacitor with High Reliability by Anodization of Zr–Al Alloy Film

Mikuni

Shibata²,

Shinkai

et al. 2007

jjap

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We have prepared Zr–Al thin-film capacitors by anodizing a sputter-deposited Zr–Al alloy film with 46 at. % Al, and examined their properties before and after heat treatment and their leakage current mechanism. In addition, anodized Zr–Al films were characterized by X-ray diffraction (XRD) analysis and Auger electron spectroscopy (AES). It is revealed that the reliability of an anodized pure-Zr capacitor is markedly improved by substituting the anodized Zr–Al film for anodized pure-Zr, because the crystallization of anodized Zr–Al amorphous films hardly occurs. In addition, it is clarified that the leakage current mechanism of the anodized Zr–Al capacitor is due to Schottky emission and that the thermal degradation observed after heat treatment above 350 °C is triggered by the diffusion of Zr atoms from the underlying unoxidized alloy layer into the anodized Zr–Al layer.

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Fabrication of hydrogen sensors with transparent titanium oxide nanotube-array thin films as sensing elements

et al. 2006

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Anodization of Al3Zr intermetallic compound film and its application to the preparation of thin-film capacitors with high reliability

Cited by 3 publications

References 6 publications

Transparent Highly Ordered TiO2 Nanotube Arrays via Anodization of Titanium Thin Films

Transparent Highly Ordered TiO2 Nanotube Arrays via Anodization of Titanium Thin Films

Preparation of Thin-Film Capacitor with High Reliability by Anodization of Zr–Al Alloy Film

Fabrication of hydrogen sensors with transparent titanium oxide nanotube-array thin films as sensing elements

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