1966
DOI: 10.1016/0022-3697(66)90087-4
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Anomalies in the electrical conductivity of nickel oxide above room temperature

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1967
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Cited by 31 publications
(6 citation statements)
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“…This oxide is known to have E ∼ 0.7 eV for 120 ≤ T ( • C) ≤ 250 • C and E ∼ 0.3 eV for 250 ≤ T ( • C) ≤ 900. 12,13 Thus, the estimated E dependence on the NiO content provides further evidence that the transport mechanisms in the NiO concentration regions (1), (2), and (3) are due to ionic, mixed, and electronic charge carriers, respectively.…”
Section: Resultsmentioning
confidence: 85%
See 1 more Smart Citation
“…This oxide is known to have E ∼ 0.7 eV for 120 ≤ T ( • C) ≤ 250 • C and E ∼ 0.3 eV for 250 ≤ T ( • C) ≤ 900. 12,13 Thus, the estimated E dependence on the NiO content provides further evidence that the transport mechanisms in the NiO concentration regions (1), (2), and (3) are due to ionic, mixed, and electronic charge carriers, respectively.…”
Section: Resultsmentioning
confidence: 85%
“…For intermediary NiO compositions (region 2), a clear discontinuity of the Arrhenius behavior is observed at T ∼ 250 • C, a temperature found to be NiO-concentration independent and close to the Néel temperature of NiO. 13 In order to describe the ρ(T) curves of the NiO compositions m > 20 curves, two Arrhenius processes were used.…”
Section: Resultsmentioning
confidence: 99%
“…5,19 NiO exhibits a discontinuity in the Arrhenius plots at a temperature close to the Néel temperature ͑T N Ϸ 250°C͒, and the activation energies are ⌬E Ϸ 0.7 and 0.3 eV for T Ͻ T N and T Ͼ T N , respectively. 5,19 The ͑T͒ data at low temperatures ͑T Ͻ 400°C͒ shown in Fig. 3 indicated that the NiO content had a large influence on the electrical conductivity of the composite.…”
Section: Resultsmentioning
confidence: 99%
“…4 NiO is a p-type semiconductor, the charge carriers being the electron holes due to Ni vacancies. 5,19 NiO exhibits a discontinuity in the Arrhenius plots at a temperature close to the Néel temperature ͑T N Ϸ 250°C͒, and the activation energies are ⌬E Ϸ 0.7 and 0.3 eV for T Ͻ T N and T Ͼ T N , respectively. 5,19 The ͑T͒ data at low temperatures ͑T Ͻ 400°C͒ shown in Fig.…”
Section: Resultsmentioning
confidence: 99%
“…Gadoliniumdoped ceria is an oxygen ion conductor with activation energy (Ea) values reported in the 0.6-1.0 eV interval, over a wide range of both temperature and oxygen partial pressure (20). On the other hand, NiO is a p-type semiconductor, which exhibits a discontinuity in the Arrhenius plots at a temperature close to the Néel temperature (T N ~250°C) (21). The (22,23).…”
Section: Resultsmentioning
confidence: 99%