Abstract:We report anomalous quantum transport features in bilayer graphene in the presence of a random distribution of structural vacancies. By using an efficient real-space Kubo-Greenwood transport methodology, the impact of a varying density of dimer versus nondimer vacancies is investigated in very large scale disordered models. While nondimer vacancies are shown to induce localization regimes, dimer vacancies result in an unexpected ballistic regime whose energy window surprisingly enlarges with increasing impurit… Show more
“…This is reminiscent of the midgap state produced by asymmetry between the number of atoms A and B in monolayer graphene [41,14]. In agreement with previous findings for MLG [4,14,16,20] and BLG [12,29,32], for large values of energies E the DOS is weakly affected by the presence of disorder. Finally near the Dirac energy there is an intermediate regime where the pseudo-gap is filled ("plateau").…”
Section: Density Of Statessupporting
confidence: 91%
“…[14,15,16,17,18,19,20,21,22,23,24,25] and Refs. therein), and for BLG [26,27,28,29,30,31,32,12]. Most of them consider a standard Hamil-tonian that takes only into account the hopping between the nearest neighbors orbitals.…”
Section: Introductionmentioning
confidence: 99%
“…Most of them consider a standard Hamil-tonian that takes only into account the hopping between the nearest neighbors orbitals. Yet some studies show the importance of hopping beyond nearest neighbors on electronic structure and transport properties [4,14,24,25,32]. In this paper, we present electronic properties of MLG and BLG obtained by two tight-binding (TB) models: the standard model with nearest neighbor only (TB1) and a TB model including the effect of the hopping beyond nearest neighbors (TB2).…”
Section: Introductionmentioning
confidence: 99%
“…For this reason, theses scatters are called resonant scatters. The adsorbate is simulated by a simple vacancy in the plane of p z orbital as usually done [4,12,20,23,32]. Indeed the covalent bonding between the adsorbate and the carbon atom of graphene to which it is linked, eliminates the p z orbital from the relevant energy window.…”
We describe the electronic conductivity, as a function of the Fermi energy, in the Bernal bilayer graphene (BLG) in presence of a random distribution of vacancies that simulate resonant adsorbates. We compare it to monolayer (MLG) with the same defect concentrations. These transport properties are related to the values of fundamental length scales such as the elastic mean free path Le, the localization length ξ and the inelastic mean free path Li. Usually the later, which reflect the effect of inelastic scattering by phonons, strongly depends on temperature T . In BLG an additional characteristic distance l1 exists which is the typical traveling distance between two interlayer hopping events. We find that when the concentration of defects is smaller than 1%-2%, one has l1 ≤ Le ξ and the BLG has transport properties that differ from those of the MLG independently of Li(T ). Whereas for larger concentration of defects Le < l1 ξ, and depending on Li(T ), the transport in the BLG can be equivalent (or not) to that of two decoupled MLG. We compare two tight-binding model Hamiltonians with and without hopping beyond the nearest neighbors.PACS. 7 2.15.Lh -7 2.15.Rn -7 3.20.Hb -7 2.80.Vp -7 3.23.-b arXiv:1701.08216v1 [cond-mat.mes-hall]
“…This is reminiscent of the midgap state produced by asymmetry between the number of atoms A and B in monolayer graphene [41,14]. In agreement with previous findings for MLG [4,14,16,20] and BLG [12,29,32], for large values of energies E the DOS is weakly affected by the presence of disorder. Finally near the Dirac energy there is an intermediate regime where the pseudo-gap is filled ("plateau").…”
Section: Density Of Statessupporting
confidence: 91%
“…[14,15,16,17,18,19,20,21,22,23,24,25] and Refs. therein), and for BLG [26,27,28,29,30,31,32,12]. Most of them consider a standard Hamil-tonian that takes only into account the hopping between the nearest neighbors orbitals.…”
Section: Introductionmentioning
confidence: 99%
“…Most of them consider a standard Hamil-tonian that takes only into account the hopping between the nearest neighbors orbitals. Yet some studies show the importance of hopping beyond nearest neighbors on electronic structure and transport properties [4,14,24,25,32]. In this paper, we present electronic properties of MLG and BLG obtained by two tight-binding (TB) models: the standard model with nearest neighbor only (TB1) and a TB model including the effect of the hopping beyond nearest neighbors (TB2).…”
Section: Introductionmentioning
confidence: 99%
“…For this reason, theses scatters are called resonant scatters. The adsorbate is simulated by a simple vacancy in the plane of p z orbital as usually done [4,12,20,23,32]. Indeed the covalent bonding between the adsorbate and the carbon atom of graphene to which it is linked, eliminates the p z orbital from the relevant energy window.…”
We describe the electronic conductivity, as a function of the Fermi energy, in the Bernal bilayer graphene (BLG) in presence of a random distribution of vacancies that simulate resonant adsorbates. We compare it to monolayer (MLG) with the same defect concentrations. These transport properties are related to the values of fundamental length scales such as the elastic mean free path Le, the localization length ξ and the inelastic mean free path Li. Usually the later, which reflect the effect of inelastic scattering by phonons, strongly depends on temperature T . In BLG an additional characteristic distance l1 exists which is the typical traveling distance between two interlayer hopping events. We find that when the concentration of defects is smaller than 1%-2%, one has l1 ≤ Le ξ and the BLG has transport properties that differ from those of the MLG independently of Li(T ). Whereas for larger concentration of defects Le < l1 ξ, and depending on Li(T ), the transport in the BLG can be equivalent (or not) to that of two decoupled MLG. We compare two tight-binding model Hamiltonians with and without hopping beyond the nearest neighbors.PACS. 7 2.15.Lh -7 2.15.Rn -7 3.20.Hb -7 2.80.Vp -7 3.23.-b arXiv:1701.08216v1 [cond-mat.mes-hall]
“…We attribute this behavior to enhanced quantum correction induced by electron-hole interactions. PACS numbers: 71.35.-y, 64.70.Tg, 31.15.V-, 71.35.CcIntroduction.-Recent experiments have shown that most correlated materials contain a significant amount of defects, which appear to be intrinsic [1][2][3][4][5][6][7]. These inhomogeneities could significantly affect device performance.…”
We study the combined impact of random disorder and electron-electron, and electron-hole interactions on the absorption spectra of a three-dimensional Hubbard Hamiltonian. We determine the single-particle Green's function within the typical medium dynamical cluster approximation. We solve the Bethe-Salpeter equation (BSE) to obtain the dynamical conductivity. Our results show that increasing disorder strength at a given interaction strength leads to decreased absorption with the dynamical conductivity, systematically going to zero at all frequencies, a fingerprint of a correlation-mediated electron localization. Surprisingly, our data reveal that taking into account the effects of electron-hole interactions through the BSE significantly changes the oscillator strength with a concomitant reduction in the critical disorder strengths W U c . We attribute this behavior to enhanced quantum correction induced by electron-hole interactions. PACS numbers: 71.35.-y, 64.70.Tg, 31.15.V-, 71.35.CcIntroduction.-Recent experiments have shown that most correlated materials contain a significant amount of defects, which appear to be intrinsic [1][2][3][4][5][6][7]. These inhomogeneities could significantly affect device performance. Most of the experimental transport data on disordered materials have defied explanation by the conventional transport theory. For instance, the phase diagram of the binary mixture of the correlated ferromagnetic metal SrRuO 3 (T C ≈160 K) [8] and the band insulator SrTiO 3 (band gap ≈ 3.2) [9] is still under active research. One suggestion is that there is an Anderson insulator around x 0.5 and a disordered correlated insulator at ∼0.2 [7]. Other potential candidates for which the coexistence of defects and electron-electron and electron-hole interactions could play a crucial role are the perovskite transition metal oxides, e.g., A 1−x BA ′ x O 3 . Understanding the defect morphology could greatly improve better characterization of their properties and that of materials in general.
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