Anomalous behavior of ion-implanted GaSb

Callec, R.; Favennec, P.N.; Salvi, M.; L'Haridon, H.; Gauneau, M.

doi:10.1063/1.106173

Cited by 78 publications

(34 citation statements)

References 14 publications

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“…In the case of GaN, [5][6][7][8] nitrogen bubbles and gallium nanocrystals are formed in the amorphized layer by ion irradiation. In the case of GaSb [9][10][11][12][13][14][15][16][17] and InSb, 9,17,18) unusual behaviors, such as elevation, swelling, and the formation of holes, voids, nanofibers, and cellular structures with nano to submicron dimensions, are observed on irradiated surfaces. Similar phenomena occur in irradiated Ge surfaces (for example, see Refs.…”

Section: Introductionmentioning

confidence: 99%

Void Formation and Structure Change Induced by Heavy Ion Irradiation in GaSb and InSb

et al. 2010

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Void formation and structure change by heavy ion irradiation were investigated in GaSb and InSb thin films. The voids were formed after irradiation in both materials. The average diameter of the voids was about 15 nm in GaSb and 20 nm in InSb irradiated with 60 keV Sn þ ions to a fluence of 0:25 Â 10 18 ions/m 2 at room temperature. The void size in InSb is larger than that in GaSb. The large void size is quantitatively explained by the amount of induced vacancies obtained by the SRIM code simulation. The Debye-Scherrer rings were observed in the SAED patterns on both materials. The structure changes into a polycrystal by ion irradiation. Additionally, the 200 superlattice reflections in the [001] net pattern were almost absent, and the streak pattern along the h110i direction was observed in InSb. It is considered that the anti phase domains of different lengths are formed by ion irradiation. Ion irradiation transforms the structure of InSb from chemical ordering to chemical disordering via the formation of anti phase boundaries.

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Section: Introductionmentioning

confidence: 99%

Void Formation and Structure Change Induced by Heavy Ion Irradiation in GaSb and InSb

et al. 2010

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“…In 1988, Pearton et al 9) investigated production and removal of lattice damage in InAs, GaP and GaSb for implants of Si and Mg, and observed that zinc-blend type crystallites with a grain size of ∼ 17 nm remained on the implanted GaSb surface after annealing. In 1991, Callec et al 10) measured the elevations of the GaSb surface implanted under various conditions of ion species, acceleration voltage and ion doses and observed their cross-sectional views by scanning electron microscopy (SEM). They considered that the elevations occurred after amorphization since the critical dose for elevation was equal to that of amorphization.…”

Section: Introductionmentioning

confidence: 99%

Formation of Anomalous Defect Structure on GaSb Surface by Low Temperature Sn Ion-Implantation

et al. 2002

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Defect formation in (100) GaSb by 60 keV Sn + ion-implantation at 150-153 K is investigated using cross-sectional TEM, SEM and EDX. An anomalous structure consisting of many cells, which looks like a honey comb, was formed on the surface implanted with 8.9×10 18 ions/m 2 . The diameter and the depth of a cell were about 50 nm and 220-250 nm respectively. The thickness of the walls partitioning the cells was about 10 nm. The upper part of the partitioning wall is amorphous and rich in Ga, while the lower part shows crystalline structure. A heavily strained region of 50 nm thickness, corresponding to the maximum depth of the projected Sn ions, was observed under the cells. This defect structure is compared with similar defects which have been observed in ion-implanted GaSb. The defect formation mechanism is discussed, and an explanation based on movement of the implantation induced point defects is proposed. It is assumed that hills and hollows are formed in the early stage of implantation. The point defects created on the hills do not contribute to the development of the defect structure, because they annihilate almost completely by the recombination of vacancy and interstitial and by the movement to the near surface sink. However, under the hollows, vacancies which escaped recombination remain, and the interstitial atoms, which are highly mobile at low temperatures, migrate far from there to aggregate under the hills. The hollows become deeper by the movement of the remaining vacancies to the surface, and the hills develop into the walls by the migration of the interstitial atoms from the surrounding hollows.

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“…[10][11][12][13] Previous studies on ion implantation in GaSb have indicated swelling effects at the near-surface regions. 10 In the present investigation, we have carried out IM of p-GaSb by Ar ϩ ions and studied its effect on the electronic properties by the spatial resolved EBIC and cathodoluminescence ͑CL͒ techniques. EBIC measurements with metal on p-GaSb structures could not have been performed due to Fermi level pinning close to the valence band edge.…”

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confidence: 99%

p- to n-type conversion in GaSb by ion beam milling

Panin

Dutta

Piqueras

et al. 1995

Applied Physics Letters

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Inversion in conductivity type of GaSb from p- to n- has been observed as a result of argon ion beam milling. Electron beam induced current (EBIC) measurements have been employed for detecting the type conversion. Enhancement in the luminescence intensity is seen after ion beam treatment. The type conversion is proposed to occur due to a combined effect of generation of native donors and gettering of native acceptors originally present in the as-grown samples.

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Anomalous behavior of ion-implanted GaSb

Cited by 78 publications

References 14 publications

Void Formation and Structure Change Induced by Heavy Ion Irradiation in GaSb and InSb

Void Formation and Structure Change Induced by Heavy Ion Irradiation in GaSb and InSb

Formation of Anomalous Defect Structure on GaSb Surface by Low Temperature Sn Ion-Implantation

p- to n-type conversion in GaSb by ion beam milling

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