p- to n-type conversion in GaSb by ion beam milling

Abstract

Inversion in conductivity type of GaSb from p- to n- has been observed as a result of argon ion beam milling. Electron beam induced current (EBIC) measurements have been employed for detecting the type conversion. Enhancement in the luminescence intensity is seen after ion beam treatment. The type conversion is proposed to occur due to a combined effect of generation of native donors and gettering of native acceptors originally present in the as-grown samples.

Luminescence properties of transition-metal-doped GaSb

“…The concentration of these precipitates is highest in sample Ru1 and decreases from samples Ru2 to Ru4. The measured precipitate concentrations range from 5ϫ10 4 cm Ϫ2 in sample Ru4, to 1ϫ10 6 cm Ϫ2 in sample Ru1. CL images clearly reveal an inhomogeneous distribution in number, shape and size of the precipitates depending on the position along the ingot axis.…”

“…This technique which provides information on the nature and spatial distribution of the defects has been to our knowledge, only recently applied to characterize GaSb crystals as reported in previous works of our laboratory. 6,7 …”

Influence of Au diffusion on the formation of nanodot hexagonal ordered arrays on GaSb substrates by low energy ion sputtering

“…Very recent papers have been published on the formation of nanostructures on this material by using LEIS, such the series of papers above-mentioned by Facsko et al [11][12][13], who studied the formation of hexagonal nanostructured arrays and quantum dots on GaSb. We can also mention the analysis carried out by Panning et al [17], on the p to n-type conversion on GaSb surfaces by using the same technique. However, more research is needed on the LEIS nanostructuring technique on semiconductor materials.…”

Luminescence effects of ion-beam bombardment of CdTe surfaces

“…In this case, the effect of removal material, which produces a high-quality surface, has been reported [9][10][11]. IM has also been traditionality implemented in the preparation of TEM samples [12][13][14] and also as an alternative way to change the conductivity, forming a thick layer in the upper part of the sample surfaces, for example when applied to GaSb [15] and CdTe [16] compounds. In this work, we investigate the effect of low-energy IBS on CdTe substrates, analyzing the effects by means of topographic and optical techniques.…”