2020
DOI: 10.1103/physrevlett.125.217701
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Anomalous Cyclotron Motion in Graphene Superlattice Cavities

Abstract: We consider graphene superlattice miniband fermions probed by electronic interferometry in magnetotransport experiments. By decoding the observed Fabry-Pérot interference patterns together with our corresponding quantum transport simulations, we find that the Dirac quasiparticles originating from the superlattice minibands do not undergo conventional cyclotron motion but follow more subtle trajectories. In particular, dynamics at low magnetic fields is characterized by peculiar, straight trajectory segments. O… Show more

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Cited by 17 publications
(19 citation statements)
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“…Hexagonal contributions to the Fermi contour E ( k) implies six predominant velocity directions v = k E ( k) as a function of the wave vector k, see Ref. [11]. This allows for the specific realization of patterns with highly focused emission directionality in few directions such as in Fig.…”
Section: Bilayer Graphene Disks: Beyond Particle-wave Correspondencementioning
confidence: 96%
See 1 more Smart Citation
“…Hexagonal contributions to the Fermi contour E ( k) implies six predominant velocity directions v = k E ( k) as a function of the wave vector k, see Ref. [11]. This allows for the specific realization of patterns with highly focused emission directionality in few directions such as in Fig.…”
Section: Bilayer Graphene Disks: Beyond Particle-wave Correspondencementioning
confidence: 96%
“…As a result, the combination of these various special properties, i.e., that charge carriers in graphene partly behave like photons, are deflected by magnetic fields, are reflected or diffracted at p-n junctions and propagate dispersionless, * martina.hentschel@physik.tu-chemnitz.de has opened up the swiftly expanding field of Dirac electron optics based on ultraclean ballistic graphene devices. Correspondingly, optics analogues comprise Klein tunneling in single-layer graphene p-n-p junctions [1][2][3][4][5][6][7], p-n junctions [8][9][10], or Fabry-Pérot type settings [7,11,12] as well as anti-Klein tunneling in bilayer graphene [1,[13][14][15][16][17] where in particular circular p-n junctions were considered [18]. Collimation [8,19], various electron lensing [20][21][22][23], and guiding [24][25][26][27][28][29][30] phenomena were investigated in this context.…”
Section: Introductionmentioning
confidence: 99%
“…particular those for normal incidence) still useful, but at the same time other effects to become important. Figures 9,10,11 display a manifold of internal intensity distributions and mid field emission patterns as source position and asymmetry parameter U are varied. We begin our discussion with a central source position, Fig.…”
Section: Bilayer Graphene Disks: Beyond Particle-wave Correspondencementioning
confidence: 99%
“…that charge carriers in graphene partly behave like photons, are deflected by magnetic fields, are reflected or diffracted at p-n junctions and propagate dispersionless, has opened up the swiftly expanding field of Dirac electron optics based on ultraclean ballistic graphene devices. Correspondingly, optics analogues comprise Klein tunneling in singlelayer graphene p-n-p junctions [1][2][3][4][5][6][7] , p-n junctions [8][9][10] , or Fabry-Pérot type settings 7,11,12 as well as anti-Klein tunneling in bilayer graphene 1,[13][14][15][16][17] where in particular circular p-n junktions were considered 18 . Collimation 8,19 , various electron lensing [20][21][22][23] and guiding [24][25][26][27][28][29][30] phenomena were investigated in this context.…”
Section: Introductionmentioning
confidence: 99%
“…[ 1,4 ] In this regard, several reports demonstrated how the Fermi velocity alters graphene transport features [ 11–14 ] and its device performance. [ 15,16 ] Among graphene morphologies, quantum wells (QWs), [ 17,18 ] hetrostructures, [ 19–22 ] and superlattices (SLs) [ 23–26 ] have widely been implemented in designing/fabrication emerging devices [ 27–29 ] and exploring novel phenomenon [ 30–35 ] beyond the reach of exciting materials. In this context, resonant tunneling as one of the unique transport processes in SLs exhibited great promise to enrich the potential of SLs and QW devices including tunnel transistors (TFETs) [ 36–38 ] and resonant tunneling diodes (RTDs).…”
Section: Introductionmentioning
confidence: 99%