Anomalous Hall effect in Co/Ni multilayers with perpendicular magnetic anisotropy

Zhang, Peng; Xie, Kaixuan; Lin, Weiwei; Wu, Di; Sang, H.

doi:10.1063/1.4866774

Cited by 21 publications

(13 citation statements)

References 40 publications

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“…We intentionally chose a capping layer of 5 nm of Al (which will naturally oxidize over typically 2 or 3 nm) to rule out any supplementary contribution related to the oxidation at Ni/Al interfaces in order to focus our discussion on Pt/Co and Co/Ni interfaces. It has been shown that Co/Ni exhibits a perpendicular magnetic anisotropy whose origin lies in the hybridization and spin-polarized charge transfer at Co/Ni interfaces [29][30][31][32][33]. Similar systems that have been reported to promote PMA are Co/Pt/Ni multilayers [34] and Pt/Co/Pt [35] trilayers.…”

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confidence: 91%

Perpendicular magnetization reversal in Pt/[Co/Ni]3/Al multilayers via the spin Hall effect of Pt

Rojas-Sánchez

Laczkowski

Sampaio

et al. 2016

Applied Physics Letters

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We experimentally investigate the current-induced magnetization reversal in Pt/[Co/Ni]3/Al multilayers combining the anomalous Hall effect and magneto-optical Kerr effect techniques in crossbar geometry. The magnetization reversal occurs through nucleation and propagation of a domain of opposite polarity for a current density of the order of 0.3 TA/m 2 . In these experiments we demonstrate a full control of each stage: i)the Ørsted field controls the domain nucleation and ii) domain-wall propagation occurs by spin torque from the Pt spin Hall effect. This scenario requires an in-plane magnetic field to tune the domain wall center orientation along the current for efficient domain wall propagation. Indeed, as nucleated, domain walls are chiral and Néel like due to the interfacial Dzyaloshinskii-Moriya interaction.Controlling the magnetization reversal using the spin transfer torque (STT) is a key ingredient for the implementation of several technologies, including for example MRAM, benefiting from the scalability of the effect [1]. However, in materials stacks using conventional STT, the magnetization reversal requires a high current density of the order of 10 10 A/m 2 , which should ideally be as small as possible in order to avoid detrimental aftereffects when flowing across tunnel junctions based-MRAM [2]. An alternative route for magnetization control is by means of the so-called spin-orbit torque (SOT), which uses materials with a strong spin-orbit coupling (SOC) such as Pt, to generate spin currents along the perpendicular directions to the charge current via its spin Hall effect (SHE). It is then possible to take advantage of this spin current with the only difference that now both charge and spin currents are orthogonal to each other in a typical multilayer system. Charge current is flowing along the interface while spin current is diffusing perpendicularly to the interface of the constitutive layers.In this vein, several experiments have been designed to demonstrate the possibility of reversing the magnetization in single ferromagnetic layer or to propagate domain walls (DWs) using materials with strong SHE [3][4][5][6][7][8].Unfortunately the exact origin of the process as well as its microscopic understanding were still far from being fully understood at the present stage [9][10][11][12][13]. Since the pioneering work from Miron et al., [3] several reports have shown some possible routes or scenarios to explain either magnetization reversal [4,[14][15][16][17][18][19][20][21] or DW propagation [5][6][7][8][22][23][24][25][26][27][28]. The latest involve DW propagation taking into account the Dzyaloshinski-Moriya interaction (DMI) at non magnetic/magnetic interfaces in magnetic multidomain configurations [7-9, 15-19, 21-26]. One common point of these studies is the use of magnetic materials with perpendicular magnetic anisotropy (PMA) as well as the application of a small in-plane magnetic field along the current direction to electrically reverse the magnetization [3,4,[14][15][16][17][18][19][20][21]. I...

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confidence: 91%

Perpendicular magnetization reversal in Pt/[Co/Ni]3/Al multilayers via the spin Hall effect of Pt

Rojas-Sánchez

Laczkowski

Sampaio

et al. 2016

Applied Physics Letters

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“…For inhomogeneous granular and multilayer samples, spin-dependent interfacial scattering leads to large γ (>2), e.g., γ = 2.6 in Fe/Cr multilayers [13] and γ = 3.7 in Co-Ag granular thin films [14], which cannot be ascribed to any of the three mechanisms above. Moreover, in the multilayer heterostructures, the shunting effect is a critical issue in Hall resistivity measurement [15][16][17]. Because the Hall voltage depends on the current flow in each layer, the conventional bulk scaling law cannot be applied for samples with different current distributions.…”

Section: Introductionmentioning

confidence: 99%

Anomalous Hall effect in Fe/Au multilayers

Zhang

Wen

et al. 2016

Phys. Rev. B

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To understand the interfacial scattering effect on the anomalous Hall effect (AHE), we prepared multilayers of (Fe (36/n) nm /Au (12/n) nm ) n using an e-beam evaporator. This structure design allowed us to investigate the effect of interfacial scattering on the AHE, while keeping the samples' thickness and composition unchanged. We measured the (magneto)transport properties of the samples in a wide temperature range (10-310 K) with magnetic fields up to 50 kOe. We found that the scaling between the anomalous Hall resistivity (ρ AHE ) and longitudinal resistivity (ρ xx ) can be roughly described by ρ AHE ∼ ρ γ xx with γ = 2.65 ± 0.10 and 1.90 ± 0.04 for samples from n = 1 to n = 4 and samples from n = 4 to n = 12, respectively. Our quantitative analysis results showed that the interfacial scattering suppresses the contribution of the intrinsic mechanism and gives rise to a side-jump contribution.

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“…The contributions of surface and interface scattering on AHE were also verified in ferromagnetic/nonmagnetic (FM/NM) multilayers, such as [Co/Pd] n , [Co/Cu] n and [Co/Pt] n [6][7][8]. The effect of FM/FM interface on AHE was studied in [Co/Ni] n structures [9]. The AHE in ferromagnet/semiconductor (FM/SC) structures was also reported in Fe/Si, Fe/Ge and Fe/GaAs [10][11][12].…”

Section: Introductionmentioning

confidence: 96%

Anomalous Hall effect in Co40Fe40B20/SiO2/Si structures

Zhang

2016

Journal of Alloys and Compounds

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Anomalous Hall effect in Co/Ni multilayers with perpendicular magnetic anisotropy

Cited by 21 publications

References 40 publications

Perpendicular magnetization reversal in Pt/[Co/Ni]3/Al multilayers via the spin Hall effect of Pt

Perpendicular magnetization reversal in Pt/[Co/Ni]3/Al multilayers via the spin Hall effect of Pt

Anomalous Hall effect in Fe/Au multilayers

Anomalous Hall effect in Co40Fe40B20/SiO2/Si structures

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