Anomalous-Heat Conduction of Ion-Implanted Amorphous Layers in Silicon Crystals Using a Laser-Probe Technique

Ultrahigh-density deuterium of Rydberg matter clusters for inertial confinement fusion targets

“…This can be seen also from the sub-threshold electron beam irradiation on silicon (Hora, 1983;Sari et al, 2005). When changing n-into p-conducting silicon crystals, a defect density of more than 10 19 per cm 3 was possible well under minor increase of the volume of the crystal and generation of voids as seen from the strongly reduced thermal conductivity of these crystals (Goldsmid et al, 1984). Therefore densities n D of defects may well be possible with the limit n D 10 À3 n s ,…”

“…This means that the clusters may be placed each in an average distance of about 10 atoms in the host lattice. For higher densities and irreversible braking of the host crystal may happen as known from experiments (Hora, 1983;Goldsmid et al, 1984). But if the crystalline voids are filled with the ultradense clusters, their interaction with the neighbor atoms of the host crystal may reduce the stress such that the crystal will not easily be broken into parts.…”