Anomalous near-surface effects in room temperature implanted germanium

Lawson, Ewan; Short, K. T.; Williams, J. S.; Appleton, B. R.; Holland, O. W.; Schow, O.E.

doi:10.1016/0167-5087(83)90815-3

Cited by 12 publications

(3 citation statements)

References 4 publications

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“…Furthermore, the structural transition of a-Ge to a porous structure at high damage densities may support the observed implantation-dependent SPEG kinetics being influenced by stress [22][23][24][25][26][27][28][29]. As stated earlier, high dose/low implant energy conditions generated sparse, but microscopic voids (a precursor to the porous structure) and possibly, these voids are preceded by smaller, submicroscopic voids.…”

Section: Discussionmentioning

confidence: 81%

“…A key difference between Ge and Si is that Ge is known to become highly porous [22][23][24][25][26][27][28][29] at doses above 4 Â 10 15 cm À2 . Such behavior suggests the atomistic nature of the a-Ge phase can be altered with dose or implant energy [30], which may possibly lead to dependence of the SPEG kinetics on self-implantation conditions, in contrast with Si where no such dependence is observed [11].…”

Section: Introductionmentioning

confidence: 99%

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Self-implantation energy and dose effects on Ge solid-phase epitaxial growth

Darby

Yates

Rudawski

et al. 2011

Nuclear Instruments and Methods in Physics Research Section B:

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Section: Discussionmentioning

confidence: 81%

Section: Introductionmentioning

confidence: 99%

Self-implantation energy and dose effects on Ge solid-phase epitaxial growth

Darby

Yates

Rudawski

et al. 2011

Nuclear Instruments and Methods in Physics Research Section B:

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“…This process is known to occur for several different semiconductors, and was first demonstrated for the case of compound semiconductors such as indium antimonide (InSb), gallium antimonide (GaSb), and gallium nitride (GaN). [15][16][17][18][19] However, It was not until the early 1980s that it was discovered that the elemental semiconductor Ge also experiences a similar phenomenon, [20][21][22][23] which has to date been most extensively studied as compared with any other materials that exhibit similar behavior. Nanostructuring of Ge using ion beam modification will be the subject of this review, but it should be noted that many, if not all, considerations discussed here in the context of Ge may not be applicable to the aforementioned materials that exhibit similar phenomena.…”

Section: Introductionmentioning

confidence: 96%

Nanostructured germanium prepared via ion beam modification

Rudawski

Jones

2013

J. Mater. Res.

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Nanostructured" germanium (Ge; also known as "voided," "porous," "nanoporous," "cratered," and "honeycomb" Ge) created via ion beam modification has been studied for many years. This work reviews the progress made in studying and characterizing the nanostructured morphology, particularly via the use of experimental techniques such as scanning electron microscopy, atomic force microscopy, and transmission electron microscopy. Specifically, the empirical observations of the structural evolution of Ge as a function of ion beam modification conditions are discussed with added emphasis placed on quantification of the microstructure. The experimental observations and microstructure quantification are further discussed in terms of the implications for proposed formation mechanisms of the nanostructured morphology. Potential uses of the nanostructured morphology in chemical sensor and energy storage applications and suggested future lines of research to further the fundamental understanding of nanostructuring in Ge using ion beam modification are also presented.

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Effect of Heavy Ion Implantation and Laser Annealing on the Structural Properties of Germanium

Хайбуллин

Zakirov

Zaripov

et al. 1986

phys. stat. sol. (a)

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A yield deficit in RBS spectra is observed for Ge and Sb implants, a less pronounced but observable effect is found for In implant, and no change in BBS spectra is detected for Kr implant into Ge. The effect is dose dependent, after reaching a critical dose, the yield deficit appears. This critical dose is 3 × 1015 atom/cm2 for Ge and 2 × 1015 atom/cm2 for Sb implantation and with increasing dose the yield deficit becomes more and more pronounced. This is similar to earlier findings. In all cases, except for the noble gas (Kr, Xe) implants, the color of the implanted specimen turns to black. At the same time, SBM investigations show a peculiar surface morphology. Xe–Sb double implants are also investigated. Implanting first the noble gas (Xe) and then Sb, the effect is not observed. Laser annealing of In implanted Ge with Q‐switched ruby laser (25 ns, 0.51 Jcm−2) results in a fairly good recrystallization and segregation of the indium to the surface. The peculiar surface morphology together with the color change disappears due to pulsed laser annealing.

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Anomalous near-surface effects in room temperature implanted germanium

Cited by 12 publications

References 4 publications

Self-implantation energy and dose effects on Ge solid-phase epitaxial growth

Self-implantation energy and dose effects on Ge solid-phase epitaxial growth

Nanostructured germanium prepared via ion beam modification

Effect of Heavy Ion Implantation and Laser Annealing on the Structural Properties of Germanium

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