Anomalous time relaxation of the nonvolatile resistive state in bipolar resistive-switching oxide-based memories

Schulman, Alejandro; Rozenberg, M. J.; Enrique, Carlos

doi:10.1103/physrevb.86.104426

Cited by 16 publications

(18 citation statements)

References 18 publications

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“…A typical course R(t) is shown in Fig.1. Qualitatively similar resistive responses were observed in [6,16,20] for Au/YBa 2 Cu 3 O 7-x structures. In the experiment from Fig.…”

Section: Measurement Resultssupporting

confidence: 72%

“…The parameter τ is the time constant of this process. In the case of structures with electro-resistive properties, the constant τ can be determined on the basis of the resistance relaxation curves after switching off the current (or voltage) [11,16]. The thickness d of the diffusion layer can be obtained (using the method proposed in [18]) from the amplitude characteristics of the resistive states of the memory element after switching off the current.…”

Section: Measurement Methodsmentioning

confidence: 99%

“…The phenomenon of electro-resistance memory in oxide materials with a perovskite crystallographic structure occurs as a result of electrodiffusion of O 2oxygen ions through oxygen vacancies [7,9,10,[14][15][16]. Oxygen diffusion inside and outside the perovskite layer changes the oxygen deficit value.…”

Section: Introductionmentioning

confidence: 99%

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The measurement of the diffusion coefficient of oxygen ions in the YBa2Cu3O7-x layer of the electro-resistance memory

Waskiewicz¹

2019

ELECTROTECHNICAL REVIEW

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The paper attempts to determine the chemical diffusion coefficient of oxygen ions in the thin YBa 2 Cu 3 O 7-x layer of the electro-resistance memory at room temperature. The measurement method was based on the assumption that in the process of switching the sample resistance by means of current pulses there is a stage of diffusion of oxygen ions in the layer of finite thickness from the source located at its surface. This layer is the oxygen depleted layer at the electrode. Its thickness was determined empirically from the amplitude characteristics of the resistive states, while the diffusion time constant was obtained from measurements of the resistance relaxation curves. The value of 5.5 • 10-18 m 2 /s of the oxygen diffusion coefficient in YBa 2 Cu 3 O 7-x obtained in this paper is in the order of magnitude consistent with the literature data obtained under similar conditions. Streszczenie. W pracy podjęto próbę wyznaczenia współczynnika dyfuzji chemicznej jonów tlenu w cienkiej warstwie YBa 2 Cu 3 O 7-x pamięci elektrorezystancyjnej w temperaturze pokojowej. Metodę pomiaru oparto na założeniu, że w procesie przełączania rezystancji próbki za pomocą impulsów prądowych występuje etap dyfuzji jonów tlenu w warstwie o skończonej grubości ze źródła zlokalizowanego przy jej powierzchni. Warstwą tą jest przyelektrodowa warstwa zubożona w tlen. Jej grubość wyznaczono doświadczalnie z charakterystyk amplitudowych stanów rezystancyjnych, natomiast stałą czasową dyfuzji otrzymano z pomiarów przebiegów relaksacji rezystancji. Otrzymana w pracy wartość 5,5•10-18 m 2 /s współczynnika dyfuzji jonów tlenu w YBa 2 Cu 3 O 7-x jest co do rzędu wielkości zgodna z danymi literaturowymi uzyskanymi w podobnych warunkach. (Pomiar współczynnika dyfuzji jonów tlenu w warstwie YBa 2 Cu 3 O 7-x pamięci elektrorezystancyjnej)

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“…A typical course R(t) is shown in Fig.1. Qualitatively similar resistive responses were observed in [6,16,20] for Au/YBa 2 Cu 3 O 7-x structures. In the experiment from Fig.…”

Section: Measurement Resultssupporting

confidence: 72%

Section: Measurement Methodsmentioning

confidence: 99%

See 1 more Smart Citation

The measurement of the diffusion coefficient of oxygen ions in the YBa2Cu3O7-x layer of the electro-resistance memory

Waskiewicz¹

2019

ELECTROTECHNICAL REVIEW

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“…Details about the synthesis and the RS characteristics of the metal-YBCO interfaces can be found elsewhere. 11,[13][14][15][16][17][18] We choose as metals Au and Pt for the pair of pulsed electrodes, labeled 1 and 2, respectively. As we have shown previously, the Pt-YBCO interfaces have a lower resistance value than the Au-YBCO ones ðRðPtÞ Շ RðAuÞ=3Þ, and a small RS amplitude.…”

Section: Methodsmentioning

confidence: 99%

Cyclic electric field stress on bipolar resistive switching devices

Schulman

Enrique

2013

Journal of Applied Physics

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We have studied the effects of accumulating cyclic electrical pulses of increasing amplitude on the non-volatile resistance state of interfaces made by sputtering a metal (Au, Pt) on top of the surface of a cuprate superconductor YBa$_2$Cu$_3$O$_{7-\delta}$ (YBCO). We have analyzed the influence of the number of applied pulses $N$ on the relative amplitude of the remnant resistance change between the high ($R_H$) and the low ($R_L$) state [$\alpha=(R_{H}-R_{L})/R_{L}$] at different temperatures ($T$). We show that the critical voltage ($V_c$) needed to produce a resistive switching (RS, i.e. $\alpha >0$) decreases with increasing $N$ or $T$. We also find a power law relation between the voltage of the pulses and the number of pulses $N_{\alpha_0}$ required to produce a RS of $\alpha=\alpha_0$. This relation remains very similar to the Basquin equation used to describe the stress-fatigue lifetime curves in mechanical tests. This points out to the similarity between the physics of the RS, associated with the diffusion of oxygen vacancies induced by electrical pulses, and the propagation of defects in materials subjected to repeated mechanical stress.Comment: 5 pages, 5 figures. To be published in JAP. Corresponding author: acha@df.uba.a

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“…oxygen ions through oxygen vacancies [7,10,[16][17][18]. Such materials are characterized by low activation energy of O 2-diffusion (E a = 0.7eV) [7,19] and high concentration of oxygen vacancies, which makes the probability of diffusion high.…”

Section: -mentioning

confidence: 99%

Measurement of the thickness of the oxygen-depleted layer in the Ag/YBa2Cu3O7-x/Ag structures of the electro-resistance memory

Waskiewicz

2018

ELECTROTECHNICAL REVIEW

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The paper presents the results of experimental investigations of the phenomenon of electro-resistance memory in the Ag/YBa 2 Cu 3 O 7-x /Ag thin-film structure at room and liquid nitrogen temperature. On the basis of the obtained voltage-current and amplitude characteristics, the threshold values of the resistive switching voltage were determined. Differences in the levels of these voltages at different switching directions and temperatures are explained using a mechanism based on oxygen ion electro-diffusion via oxygen vacancies. Using the mathematical model of this mechanism on the basis of the switching voltage values obtained, the thickness of layers depleted in oxygen ions were determined, which play a fundamental role in the switching process. The obtained thicknesses from 1.2 to 10.6 nm are consistent with the literature data for similar structures. Streszczenie. W pracy przedstawiono wyniki badań doświadczalnych zjawiska pamięci elektrorezystancyjnej w strukturze cienkowarstwowej Ag/YBa 2 Cu 3 O 7-x /Ag w temperaturze pokojowej i ciekłego azotu. Na podstawie uzyskanych charakterystyk napięciowo-prądowych i amplitudowych wyznaczono wartości progowe napięcia przełączania rezystancji. Różnice poziomów tych napięć przy różnych kierunkach przełączania oraz temperaturach wyjaśniono za pomocą mechanizmu opartego na elektrodyfuzji jonów tlenu poprzez wakansy tlenowe. Wykorzystując model matematyczny tego mechanizmu na podstawie otrzymanych wartości napięcia przełączania wyznaczono grubości warstw zubożonych w jony tlenu, które odgrywają zasadniczą rolę w procesie przełączania. Otrzymane grubości od 1,2 do 10,6 nm są zgodne z danymi literaturowymi dla podobnych struktur. (Pomiar grubości warstwy zubożonej w tlen w strukturach Ag/YBa 2 Cu 3 O 7-x /Ag pamięci elektrorezystancyjnej).

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Anomalous time relaxation of the nonvolatile resistive state in bipolar resistive-switching oxide-based memories

Cited by 16 publications

References 18 publications

The measurement of the diffusion coefficient of oxygen ions in the YBa2Cu3O7-x layer of the electro-resistance memory

The measurement of the diffusion coefficient of oxygen ions in the YBa2Cu3O7-x layer of the electro-resistance memory

Cyclic electric field stress on bipolar resistive switching devices

Measurement of the thickness of the oxygen-depleted layer in the Ag/YBa2Cu3O7-x/Ag structures of the electro-resistance memory

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