Anomalous values of interaction constants in the two-dimensional electron gas of a silicon metal-oxide-semiconductor field-effect transistor measured by parallel- and perpendicular-field magnetoconductivity

Burdis, M. S.; Dean, C.

doi:10.1103/physrevb.38.3269

Cited by 27 publications

(16 citation statements)

References 12 publications

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“…In the limit as h → 0, it is found that G͑h͒ = ͑0.091± 0.001͒h 2 , in agreement with Kawabata 27 and Burdis and Dean. 17 If the magnetic field is parallel to the plane and the system is at constant temperature, the conductivity represented by Eq. ͑7͒ becomes…”

Section: ͑7͒mentioning

confidence: 99%

“…͑1͔͒ and ͱ B as in threedimensional systems, 12 the two-dimensional negative magnetoresistance contribution is observed to have logarithmic temperature and magnetic field dependencies. [14][15][16][17] This behavior has been understood in terms of weak localization theory for two-dimensional systems. [8][9][10] In this article, we investigate the magnetoresistance response of a thin-film silicon system in order to provide insight into the low-temperature behavior of silicon-based semiconductor-metal hybrid structures.…”

Section: Introductionmentioning

confidence: 98%

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Weak localization and correlation effects in thin-film degenerate n-type silicon

Troup

Wunderlich

Williams

2007

Journal of Applied Physics

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The magnetoconductance of thin-film n-type silicon has been studied in order to provide insight into the low-temperature behavior of recent silicon-based semiconductor-metal hybrid structures. There is considerable interest in such structures as potential candidates for creating nonmagnetic read-head sensors for ultrahigh-density recording. The magnetoconductance of thin-film silicon was therefore analyzed as a function of magnetic field orientation at temperatures ranging from T=4.2 to 300 K. At low temperatures, the magnetoconductance consists of two components that are attributed to weak localization and correlation effects. Surprisingly, the thin-film transport properties behave two-dimensionally for the localization contribution, whereas the correlation contribution is isotropic. Similar two-dimensional localization behavior has previously been reported for silicon inversion layers but was not expected for silicon systems with a finite thickness. An analysis of the magnetoconductance as a function of magnetic field orientation has verified that the localization contribution depends only on the perpendicular to plane component of the field. The Hall coefficient was observed to vary with magnetic field, providing further evidence for a magnetoconductance governed by electron-electron interactions. Fitting of the data at T=4.2 K and for low magnetic fields provided values for the localization parameter α, the inelastic scattering time τi, and the two-dimensional effective electron screening constant F̃σ.

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Section: ͑7͒mentioning

confidence: 99%

Section: Introductionmentioning

confidence: 98%

Weak localization and correlation effects in thin-film degenerate n-type silicon

Troup

Wunderlich

Williams

2007

Journal of Applied Physics

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“…Large values of F * imply negative coefficients for the interaction term which may even overcome the weak localisation term and result in a total negative, or delocalising, lnT dependence. Values of F * larger than one are frequently obtained when fitting experimental data 17,18 . Application of a magnetic field allows the weak localisation and interaction terms to be separated.…”

Section: B Theory: Weak Interactionsmentioning

confidence: 99%

Weak localization, interaction effects, and the metallic phase inp-SiGe

2002

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Magnetoresistance results are presented for p-SiGe samples on the metallic side of the B=0 metal-insulator transition. It was possible to separate the weak localisation and Zeeman interaction effects but the results could not be explained quantitatively within the framework of standard theories for quantum corrections of a weakly interacting 2-dimensional system. Analysis using a theory for interaction corrections at intermediate temperatures, recently proposed by Zala, Narozhny and Aleiner, provided values of the Fermi liquid parameter F σ 0 of order -0.5. Similar values also explain the linear increase of resistance with temperature characteristic of the metallic phase.

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“…At the same time this system demonstrates positive magnetoresistance in parallel field, the behavior expected for EEC. In the 1980-s there were attempts to reveal EEC in Si from temperature and magnetic field dependences [16][17][18] of resistivity; these attempts were based on not yet developed theoretical concepts and did not lead to a self-consistent picture of magnetotransport.…”

Section: Introductionmentioning

confidence: 99%

Electron-electron interaction correction and magnetoresistance in tilted fields in Si-based two-dimensional systems

2013

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We study diffusive electron-electron interaction correction to conductivity by analyzing simultaneously ρxx and ρxy for disordered 2D electron systems in Si in tilted magnetic field. Tilting the field is shown to be a straightforward tool to disentangle spin and orbital effects. In particular, by changing the tilt angle we prove experimentally that in the field range gµBB > kBT the correction depends on modulus of magnetic field rather than on its direction, which is expected for a system with isotropic g-factor. In the high-field limit the correction behaves as ln(B), as expected theoretically (Lee, Ramakrishnan, Phys. Rev. B26 , 4009 (1982)). Our data prove that the diffusive electron-electron interaction correction to conductivity is not solely responsible for the huge and temperature dependent magnetoresistance in parallel field, typically observed in Si-MOSFETs.

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Anomalous values of interaction constants in the two-dimensional electron gas of a silicon metal-oxide-semiconductor field-effect transistor measured by parallel- and perpendicular-field magnetoconductivity

Cited by 27 publications

References 12 publications

Weak localization and correlation effects in thin-film degenerate n-type silicon

Weak localization and correlation effects in thin-film degenerate n-type silicon

Weak localization, interaction effects, and the metallic phase inp-SiGe

Electron-electron interaction correction and magnetoresistance in tilted fields in Si-based two-dimensional systems

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