2012
DOI: 10.1021/nl303758w
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Anomalous Zero-Bias Conductance Peak in a Nb–InSb Nanowire–Nb Hybrid Device

Abstract: Semiconductor InSb nanowires are expected to provide an excellent material platform for the study of Majorana fermions in solid state systems. Here, we report on the realization of a Nb-InSb nanowire-Nb hybrid quantum device and the observation of a zero-bias conductance peak structure in the device. An InSb nanowire quantum dot is formed in the device between the two Nb contacts. Due to the proximity effect, the InSb nanowire segments covered by the superconductor Nb contacts turn to superconductors with a su… Show more

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Cited by 1,667 publications
(1,793 citation statements)
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References 35 publications
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“…Recently, there has been a tremendous effort in designing and realizing materials platforms where topological superconductivity and MFs can be successfully obtained. This is demonstrated by the proposal of a large variety of systems based on heterostructures made of topological insulators or semiconductors interfaced with s-wave superconductors (SCs) [6][7][8][9][10] as well as by the subsequent experimental evidence of MFs in hybrid superconducting devices [11][12][13][14][15][16][17][18][19][20].…”
Section: Introductionmentioning
confidence: 99%
“…Recently, there has been a tremendous effort in designing and realizing materials platforms where topological superconductivity and MFs can be successfully obtained. This is demonstrated by the proposal of a large variety of systems based on heterostructures made of topological insulators or semiconductors interfaced with s-wave superconductors (SCs) [6][7][8][9][10] as well as by the subsequent experimental evidence of MFs in hybrid superconducting devices [11][12][13][14][15][16][17][18][19][20].…”
Section: Introductionmentioning
confidence: 99%
“…These III-V semiconductor nanowires, especially those with narrow band gaps, have also been used to construct hybrid quantum structures for the study of novel physics phenomena such as Majorana bound states in topological superconducting systems. [16][17][18][19] III-V semiconductor nanowires were successfully prepared by chemical vapor deposition (CVD). 20,21 In recent years, sophisticated but complex techniques, including metal-organic vapor phase epitaxy (MOVPE) and molecular beam epitaxy (MBE) have been extensively used to grow III-V semiconductor nanowires.…”
Section: Introductionmentioning
confidence: 99%
“…While it becomes clear theoretically that MBSs appear at vortex cores in two-dimensional (2D) topological SCs and ends of 1D ones realized in various hybrid systems [14][15][16][17][18][19][20][21][22][23], to nail them down conclusively in experiments remains challenging [10,[24][25][26].…”
mentioning
confidence: 99%