Anomalously large band-bending for HF-treated p-Si surfaces

Watanabe, Daisuke; En, Aimin; Nakamura, Seiji; Suhara, Michihiko; Okumura, Takahiro

doi:10.1016/s0169-4332(03)00486-0

Cited by 26 publications

(30 citation statements)

References 12 publications

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“…For example, surface HF treatments well explored in p‐doped SOI (001) pin the Fermi level close to the conduction band of Si‐NMs, which leads to surface accumulation of electrons so that reducing the sheet resistance . Experimental investigations on the influence of surface condition have been conducted on various semiconductors, such as bulk silicon and ZnO . However, the ultrathin Si‐NMs (down to the scale of 10 nm thick) have not been carefully studied yet.…”

Section: Introductionmentioning

confidence: 99%

Thickness‐Dependent Electronic Transport in Ultrathin, Single Crystalline Silicon Nanomembranes

Guo

Liao

et al. 2019

Adv Elect Materials

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As distinct from bulk silicon, ultrathin silicon‐on‐insulator (SOI) or silicon nanomembranes (Si‐NMs) offer excellent electronic and mechanical properties that are essential to the development of electronic/optoelectronic systems. Ultrathin Si‐NM field effect transistors (FETs) based on p‐doped SOI (100) wafers are investigated. The thickness of the Si‐NMs is controllably reduced from 50 nm to 10 nm through the use of a unique etching process. Based on systematic investigation of Si‐NM FETs with varying thicknesses, both insulating and metallic behaviors are observed, which can be attributed to carrier enhancement by surface‐dipole doping after thickness reduction. Spectroscopy characterization and theoretical simulations reveal that this high surface‐dipole density can be inverted, yielding high‐density electrons regardless of the bulk p‐doped nature of the material, thus significantly enhancing its conductivity. These findings offer a physical understanding of thickness dependence, which is critical to the future development of ultrathin SOI electronics, of relevance to a diverse range of semiconductor applications.

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Section: Introductionmentioning

confidence: 99%

Thickness‐Dependent Electronic Transport in Ultrathin, Single Crystalline Silicon Nanomembranes

Guo

Liao

et al. 2019

Adv Elect Materials

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“…It is known that this surface is atomically disordered, with dihydrides as the dominant surface species. 39 Prior measurements, using spectroscopic methods, found a large band bending on bulk Si(100) surfaces after HF treatment 40,41,42 for various doping levels and types. As shown in Fig.…”

Section: Resultsmentioning

confidence: 99%

Electronic Transport in Hydrogen-Terminated Si(001) Nanomembranes

et al. 2018

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Charge carrier transport in thin hydrogen (H)-terminated Si(001) sheets is explored via a fourprobe device fabricated on silicon-on-insulator (SOI) using the bulk host Si as a back-gate. The method enables electrical measurements without a need to contact the sample surface proper. Sheet conductance measurements as a function of back-gate voltage demonstrate the presence of acceptor and donor-like surface states. These states are distributed throughout the gap and can be

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“…The I-V type dependence of the current density on the surface photovoltage has previously been investigated by Watanabe et al 23 , where it was shown that two regions exist in the curve.…”

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confidence: 99%

Determination of surface recombination velocities of organic monolayers on silicon through Kelvin probe

Alderman

Ibrahim

Danos

et al. 2013

Applied Physics Letters

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We report the determination of surface recombination velocity of electron-hole pairs for silicon samples passivated with organic monolayers by using the Kelvin probe. The recombination velocity was determined by monitoring the surface photovoltage as a function of the incident photon flux. By scanning of the Kelvin probe tip over the sample area, the change in surface recombination velocity can be measured allowing mapping of the recombination 2 lifetimes. Organic monolayers with different chain lengths and exhibiting various recombination lifetimes were synthesized through a two-step chlorination-alkylation technique. The estimated recombination lifetimes were compared against those obtained from an industrial standard technique using a Sinton WCT-120 and were found to be in good agreement.INTRODUCTION:

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Anomalously large band-bending for HF-treated p-Si surfaces

Cited by 26 publications

References 12 publications

Thickness‐Dependent Electronic Transport in Ultrathin, Single Crystalline Silicon Nanomembranes

Thickness‐Dependent Electronic Transport in Ultrathin, Single Crystalline Silicon Nanomembranes

Electronic Transport in Hydrogen-Terminated Si(001) Nanomembranes

Determination of surface recombination velocities of organic monolayers on silicon through Kelvin probe

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