Electronic Transport in Hydrogen-Terminated Si(001) Nanomembranes

Peng, Weina; Zamiri, Marziyeh; Scott, Shelley A.; Cavallo, Francesca; Endres, James; Knežević, I.; Eriksson, M. A.; Lagally, M. G.

doi:10.1103/physrevapplied.9.024037

Cited by 4 publications

(5 citation statements)

References 42 publications

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“…In between these regions, the conductance reaches a minimum value known as Gmin. It is detected that the Gmin value decreases by more than 1 order of magnitude with decreasing membrane thickness from 220 to 70 nm [115]. By comparing the theoretically calculated minimum conductance values of various thickness of Si NMs with the experimentally obtained values, they concluded that NMs thickness governs the coupling strength between the top H-terminated surface and the back gate by modifying the capacitance within the NM.…”

Section: Thickness Dependent Electronic Transport Propertiesmentioning

confidence: 92%

“…In a follow-up work, the same research group studied the conductance of various thicknesses of hydrogen (H) terminated Si NMs. The charge carrier transport of H-terminated Si NMs was studied by fabricating a four-probe device on a SOI wafer where the handle Si substrate was used as a back gate [115]. As presented in Fig.…”

Section: Thickness Dependent Electronic Transport Propertiesmentioning

confidence: 99%

“…Whereas, the mechanical flexibility and stretchability combined with properties like transfer printing and buckling allow to fabricate biosensors that can be easily attached to the uneven surface of skin and organs maintaining conformal contacts [6,56]. It also allows uses of Si NMs for wearable biosensors and tactile sensors [46,54,58,68,115]. In this section, we will go through such applications based on Si NMs.…”

Section: Applications Of Si Nanomembranes In Electronics Optoelectronics and Biosensorsmentioning

confidence: 99%

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Si nanomebranes: Material properties and applications

2021

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Silicon (Si) has widely been used as an essential material in the modern semiconductor industry. Recently, new attempts have been actively made to apply Si to a variety of fields such as flexible electronic devices and biosensors by manufacturing Si nanomembranes (NMs) having nanometer thickness. In particular, as the thickness of Si is reduced to a nanometer scale, its mechanical, electrical, and optical properties differ from that of its bulk form, which provides opportunities for the development of new conceptual devices. In this review, we present recent advances in Si NM technology that exhibit functional features different from the bulk materials. In addition, we discuss the opportunities and current challenges related to this field. KEYWORDSSi nanomebranes, flexible electronics, bio-integrated electronics, Si optoelectronics, strain engineering Fabrication of Si nanomenbranesSi being a traditional semiconductor, is widely available for scientific and manufacturing purpose, in the form of rigid and brittle wafers. To fabricate mechanically flexible and stretchable Si membranes having thickness of few nanometers is, however, quite a challenging task. Flexible and stretchable silicon nanomembranes are fabricated by using the following

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Section: Thickness Dependent Electronic Transport Propertiesmentioning

confidence: 92%

Section: Thickness Dependent Electronic Transport Propertiesmentioning

confidence: 99%

Section: Applications Of Si Nanomembranes In Electronics Optoelectronics and Biosensorsmentioning

confidence: 99%

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Si nanomebranes: Material properties and applications

2021

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“…Using moderately doped (p-type and n-type) silicon Huang and Lau [62,63] observed that and dilute HF (<5%) treatment of silicon surface could achieve near-flatband surfaces-although others have observed Fermi-level pinning in HF-treated silicon surfaces [64,65]. Recently, using thin silicon layers, Peng et al [66] found that hydrogen-termination results in surface 'donarlike' states in the 10 11 cm −2 eV −1 range.…”

Section: Hydrogen-terminated Siliconmentioning

confidence: 99%

Intertrack surface losses in miniature coplanar waveguide on silicon-on-insulator

Marzouk¹,

Avramovic²,

Arscott³

2020

J. Phys. D: Appl. Phys.

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Attenuation has been studied in different-sized coplanar waveguide (CPW) patterned onto silicon-oninsulator (SOI) for three different surfaces between the CPW tracks: silicon dioxide/silicon interface, a hydrogen-terminated silicon surface, and a native oxide. For large-gap CPW (signal track width = 100 µm, gap width = 63.5 µm), selective removal of the silicon dioxide from between the metal tracks reduces losses from 0.79 dB mm -1 to 0.69 dB mm -1 at 50 GHz. The subsequent growth of a native oxide on the silicon surface between the tracks results in losses equal to 0.67 dB mm -1 . For small-gap CPW ( = 2 µm, = 2.5 µm), losses are reduced from 5.6 dB mm -1 to 3.4 dB mm -1 at 50 GHz by selectively removing the silicon oxide between the metal tracks. However, when a native oxide is allowed to grow on the silicon surface between the tracks, the losses increase significantly to 5.8 dB mm -1 . When the native oxide is removed, the losses decrease to those observed following removal of the silicon dioxide. The measurements suggest that the contribution of the intertrack surface losses is the result of free-carrier losses due to a surface inversion layer. The surface-associated losses are proportionally larger as the CPW dimensions shrink-as predicted by modelling. We suggest that technologies employing miniature CPW should take this into account. The native oxide should be routinely removed if possible-implying that 2 appropriate chemically-resistant metallisation be chosen, or fabrication processes should incorporate stable passivation of silicon surfaces between CPW tracks to avoid native oxide growth. Conversely, the increased sensitivity of attenuation to surface effects by shrinking CPW dimensions suggests that CPWbased sensors could benefit from miniaturization.

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“…We show the response of the NIH-3T3 fibroblast on three different substrates, namely, bulk Si, 220 nm Si NMs/PDMS, and 20 nm Si NMs/PDMS. The substrates have the same extensively characterized surface chemistry − and an effective shear modulus that varies over ∼6 orders of magnitude. Thus, the focus is on the unique mechanics of Si NMs on compliant substrates and how it affects cell behavior.…”

Section: Introductionmentioning

confidence: 99%

Single-Cell Response to the Rigidity of Semiconductor Nanomembranes on Compliant Substrates

Abdul

Rush

Nohava

et al. 2020

ACS Appl. Mater. Interfaces

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Single-crystalline semiconductor nanomembranes (NMs) bonded to compliant substrates are increasingly used for biomedical research and in health care. Nevertheless, there is a limited understanding of how individual cells sense the unique mechanical properties of these substrates and adjust their behavior in response to them. In this work, we performed proliferation assays, cytoskeleton analysis, and focal adhesion (FA) studies for NIH-3T3 fibroblasts on 220 and 20 nm single-crystalline Si on polydimethylsiloxane (PDMS) substrates with an elastic modulus of ∼31 kPa. We also characterized cell response on bulk Si as a reference. Our in vitro studies show that varying the thickness of the NM between 20 and 220 nm affects the proliferation rate of the cells, their cytoskeleton, fiber organization, spread area, and degree of FA. For example, cultured cells on 220 nm Si/PMDS exhibit the same response as on bulk Si, that is, they are well-spread with a pentagonal (or dendritic) shape and show a good organization of stress fibers and FAs. On the other hand, the cells on 20 nm Si/PDMS are spherical, with fiber organization and FAs in undetectable levels. We explained the results of our in vitro studies through a shear-lag mechanical model. The calculated FA−substrate contact stiffnesses for fibroblasts on bulk Si and 220 nm Si/PDMS closely match, and they are significantly higher than the stiffness of the integrin clutches and the plaque. Conversely, focal contacts with 20 nm Si/PDMS have comparable lateral compliance to adhesionmediating intracellular organisms. In conclusion, our work relies on recent advances in NM technology to fill a critical knowledge gap about how individual cells sense and react to the mechanical properties of NM-based substrates. Our findings will have a major impact on the design of flexible electronic materials for applications in biomedical science and health care.

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Electronic Transport in Hydrogen-Terminated Si(001) Nanomembranes

Cited by 4 publications

References 42 publications

Si nanomebranes: Material properties and applications

Si nanomebranes: Material properties and applications

Intertrack surface losses in miniature coplanar waveguide on silicon-on-insulator

Single-Cell Response to the Rigidity of Semiconductor Nanomembranes on Compliant Substrates

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