Anomaly of Resistivity of Single Crystal MnP at 50°K

Suzuki, Takashi; Matsumura, Yoshishige; Hirahara, Eiji

doi:10.1143/jpsj.21.1621

Cited by 20 publications

(31 citation statements)

References 6 publications

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“…The vibrational peak intensities are shown to decrease gradually with increasing vЈ. In order to obtain vibrational and rotational energy distributions of CN͑B͒, population analysis was carried out using a computer simulation program by Suzuki et al 21 The molecular parameters 22,23 and the Franck-Condon factors 24,25 for the CN(B 2 ⌺ ϩ ϪX 2 ⌺ ϩ ) transition used for the modeling were quoted from published data. Gaussian function was employed as a slit function.…”

Section: A Dispersed Fluorescence Measurementsmentioning

confidence: 99%

Dissociative excitation of acetyl cyanide by ultraviolet multiphoton absorption

Aoyama

Sugihara

Tabayashi

et al. 2003

The Journal of Chemical Physics

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Dissociative excitation of CH 3 COCN to produce CN͑B-X͒ and CN͑A-X͒ fluorescence was studied by resonance enhanced multiphoton excitation at 292 nm. The laser power dependence of the CN͑B-X͒ fluorescence intensity and the lifetime of the one-photon excited S 1 state showed that CN͑B͒ formation takes place in the direct two-photon and two-body dissociation mechanism, CH 3 COCNϩ2h →CH 3 CO(X )ϩCN(B). Vibrational and rotational energy distributions of the nascent CN͑B͒ fragment were determined by a simulation analysis of the dispersed fluorescence spectrum. The vibrational distribution was found to be of the relaxed type and rotational distribution in each vibrational state could be approximated by a Boltzmann distribution. The best-fit vibrational distribution of CN͑B͒ was N v Ј ϭ0 : N v Ј ϭ1 :N v Ј ϭ2 ϭ1.00: 0.25: 0.07 with the respective rotational temperatures of T r (vЈϭ0)ϭ2600 K, T r (vЈϭ1)ϭ1000 K, and T r (vЈϭ2)ϭ900 K. The internal state distributions were found to be hotter than those predicted by the statistical model with complete energy randomization within the excited molecule. The results indicate a dissociation mechanism where both the vibrational energy deposition in the photoexcitation and available energy redistribution before the bond breakage are limited within the modes of the skeletal CCOCN structure. Possible decay channels other than the CN͑B͒ production, upon two-photon excitation at 292 nm, are also discussed based on the potential surfaces previously predicted. The formation of CN͑A͒ presently observed in the direct two-photon excitation can be interpreted as the dissociation of the electronic excited intermediate states, populated competitively via internal conversion͑s͒ from the upper electronic states. To obtain a deeper understanding of higher excited states of acetyl cyanide, the vacuum UV absorption cross section was also determined in the 110-200 nm region, using a synchrotron radiation source.

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Section: A Dispersed Fluorescence Measurementsmentioning

confidence: 99%

Dissociative excitation of acetyl cyanide by ultraviolet multiphoton absorption

Aoyama

Sugihara

Tabayashi

et al. 2003

The Journal of Chemical Physics

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“…15 the film hardness increases ͑4 -5 GPa͒ and the films become to be classified to a-CN x . 21,[25][26][27] In particular, the emission intensity of the CH(A 2 ⌬ -X 2 ⌸) transition increases as the pressure of Ar, P Ar , increases in the range of 0.1-0.8 Torr, whereas that of the CN(B 2 ⌺ ϩ -X 2 ⌺ ϩ ) transition is almost independent of P Ar . Emission spectra of the CN(B 2 ⌺ ϩ -X 2 ⌺ ϩ ) and CH(A 2 ⌬ -X 2 ⌸) transitions have been observed with sufficient intensity.…”

Section: Introductionmentioning

confidence: 96%

“…21,[25][26][27] In particular, the emission intensity of the CH(A 2 ⌬ -X 2 ⌸) transition increases as the pressure of Ar, P Ar , increases in the range of 0.1-0.8 Torr, whereas that of the CN(B 2 ⌺ ϩ -X 2 ⌺ ϩ ) transition is almost independent of P Ar . 27 The films are rather soft ͑Ϸ1 GPa͒ and contain amount of hydrogen-termination structures. 27 The CN(B 2 ⌺ ϩ ) state is considered to be formed via the energy transfer from Ar( 3 P 0,2 ), 26 and CH(A 2 ⌬) is formed via the process involving Ar ϩ and/or (Ar ϩ ) M .…”

Section: Introductionmentioning

confidence: 96%

“…15,16 In the case of CH 3 CN, detailed studies have been made only when the desiccant is not used. 21,26,27 The P Ar dependence of the CH(A 2 ⌬ -X 2 ⌸) emission intensity is considered to originate in the increase of the concentration of the ground and/or the metastable state͑s͒ of Ar ϩ ͓ 4 D 7/2 , 4 F 9/2 , 4 F 7/2 , and 2 F 7/2 , abbreviated as (Ar ϩ ) M ], under the high-P Ar condition. 21,[25][26][27] In particular, the emission intensity of the CH(A 2 ⌬ -X 2 ⌸) transition increases as the pressure of Ar, P Ar , increases in the range of 0.1-0.8 Torr, whereas that of the CN(B 2 ⌺ ϩ -X 2 ⌺ ϩ ) transition is almost independent of P Ar .…”

Section: Introductionmentioning

confidence: 99%

“…Emission spectra of the CN(B 2 ⌺ ϩ -X 2 ⌺ ϩ ) and CH(A 2 ⌬ -X 2 ⌸) transitions have been observed with sufficient intensity. 27 The CN(B 2 ⌺ ϩ ) state is considered to be formed via the energy transfer from Ar( 3 P 0,2 ), 26 and CH(A 2 ⌬) is formed via the process involving Ar ϩ and/or (Ar ϩ ) M . 21,26,27 The P Ar dependence of the CH(A 2 ⌬ -X 2 ⌸) emission intensity is considered to originate in the increase of the concentration of the ground and/or the metastable state͑s͒ of Ar ϩ ͓ 4 D 7/2 , 4 F 9/2 , 4 F 7/2 , and 2 F 7/2 , abbreviated as (Ar ϩ ) M ], under the high-P Ar condition.…”

Section: Introductionmentioning

confidence: 99%

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Hydrogenated-amorphous carbon nitride films formed from the dissociative excitation reaction of CH3CN with the microwave-discharge flow of Ar: Correlation of the [N]/([N]+[C]) ratio with the relative number densities of the CH(A2Δ) and CN(B2Σ+) states

Ito¹,

Miki²,

Namiki³

et al. 2004

Journal of Vacuum Science &Amp; Technology A: Vacuum, Surfaces, and Films

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Electron cyclotron resonance deposition, structure, and properties of oxygen incorporated hydrogenated diamondlike amorphous carbon films J. Appl. Phys. 96, 5456 (2004); 10.1063/1.1804624 Amorphous silicon nitride films of different composition deposited at room temperature by pulsed glow discharge plasma immersion ion implantation and deposition High-resolution optical emission spectra of the CN(B 2 ⌺ ϩ -X 2 ⌺ ϩ ) and CH(A 2 ⌬ -X 2 ⌸) transitions were observed in the dissociative excitation reaction of CH 3 CN with the microwave-discharge flow of Ar. The H 2 O molecules contained in the starting materials and/or adsorbed on the wall of the apparatus were removed by using P 2 O 5 as a desiccant. The pressure of Ar, P Ar , was in the range of 0.1-0.8 Torr. From the simulation analysis of the observed spectra, the ratio of the concentrations of the CH(A 2 ⌬) and CN(B 2 ⌺ ϩ ) states, N CH(A) /N CN(B) , was determined as 0.09-0.41. It was indicated that the CN(B 2 ⌺ ϩ ) state was formed via the ion-electron recombination as well as the energy transfer from the metastable state of Ar. Based on the correlation between the N CH(A) /N CN(B) and ͓N͔/͓͑N͔ϩ͓C͔͒ ratios reported in the system without desiccation ͓Jpn. J. Appl. Phys. 40, 332 ͑2001͔͒, the ͓N͔/͓͑N͔ϩ͓C͔͒ ratio in the desiccated system was predicted to be Ϸ0.18. The hydrogenated-amorphous carbon nitride films prepared under the conditions of P Ar ϭ0.1, 0.4, 0.6, and 0.8 Torr were characterized by the Rutherford backscattering ͑RBS͒ analysis and the Fourier transform infrared ͑FTIR͒ spectroscopy. The observed ͓N͔/͓͑N͔ϩ͓C͔͒ ratios of the films were in the range of 0.17-0.21, being in good agreement with the above prediction. The structure of the films was independent of P Ar . The observed correlation between the N CH(A) /N CN(B) and ͓N͔/͓͑N͔ϩ͓C͔͒ ratios can be rationalized by the consideration that the relative concentrations of the CH(A 2 ⌬) and CN(B 2 ⌺ ϩ ) states and those of the precursor free radicals of the films are supposed to originate commonly to the relative concentrations of the active species of the discharge flow of Ar.

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Phononic Band Gaps in Periodic Cellular Materials

Liebold‐Ribeiro

Körner

2013

Adv Eng Mater

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The dynamic mechanical properties of finite two-dimensional periodic cellular materials are investigated by finite element eigenmode analysis for different architectures of the unit cell. Frequency band gaps are examined in quadratic and hexagonal lattice topologies with regular, inverted, and chiral architecture. Pronounced band gaps develop for chiral lattices. The formation of band gaps can be traced back to the resonance behavior of the elementary building blocks of the cellular structure for different boundary conditions (mode transition). Based on the findings of this work periodic lattice materials with specific band gaps can be designed. Fig. 11. Eigenmode analysis of a single curved strut (L ¼ 5.0 mm, t ¼ 0.2 mm) performed using hinged-hinged and free-free boundary conditions. The plot (left) shows the frequency as a function of the strut amplitude A, whereas the shapes of the different vibration modes of bands I-IV are depicted on the right.

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Anomaly of Resistivity of Single Crystal MnP at 50°K

Cited by 20 publications

References 6 publications

Dissociative excitation of acetyl cyanide by ultraviolet multiphoton absorption

Dissociative excitation of acetyl cyanide by ultraviolet multiphoton absorption

Hydrogenated-amorphous carbon nitride films formed from the dissociative excitation reaction of CH3CN with the microwave-discharge flow of Ar: Correlation of the [N]/([N]+[C]) ratio with the relative number densities of the CH(A2Δ) and CN(B2Σ+) states

Phononic Band Gaps in Periodic Cellular Materials

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