Antenna-in-package solution for 3D integration of millimeter-wave systems using a thin-film MCM technology

Enayati, Amin; Brebels, S.; Vandenbosch, Guy A. E.; Deraedt, Walter; Räisänen, Antti V.

doi:10.1109/mwsym.2011.5972815

Cited by 4 publications

(1 citation statement)

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“…A great number of studies on AIP and its application have been reported (Bisognin, 2015; Wojnowski, 2012; Zhang, 2009; Enayati, 2011). The cutting-edge system corporations and outsourced semiconductor assembly and testings have provided dozens of AIP samples (Wang, 2018; Yu, 2014, 2015), most of which used a wafer-level fan-out (WLFO) process based on silicon and compound wafer.…”

Section: Introductionmentioning

confidence: 99%

W-band antenna in package module with hybrid glass-compound WLFO process

Wang¹,

Xia²,

Wang³

et al. 2022

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Purpose A W-band antennas-in-packages (AIP) module with a hybrid stacked glass-compound wafer level fan-out process was presented. Heterogeneous radio frequency (RF) chips were integrated into one single module with a microscale fan-out process. This paper aims to find a new strategy for 5G communication with 3D integration of multi-function chips. Design/methodology/approach The AIP module was composed of two stacked layers: the antenna layer and RF layer. After architecture design and performance simulation, the module was fabricated, The 8 × 8 antenna array was lithography patterned on the 12 inch glass wafer to reduce the parasitic parameters effect, and the signal feeding interface was fabricated on the backside of the glass substrate. Findings AIP module demonstrates a size of 180 mm × 180mm × 1mm, and its function covers the complete RF front-end chain from the antenna to signal to process and can be applied in 5 G communication and automotive components. Originality/value With three RF multi-function chips and two through silicon via (TSV) chips were embedded in the 12 inch compound wafer through the fan-out packaging process; two layers were interconnected with TSV and re-distributed layers.

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