Anti phase boundary free GaSb layer grown on 300 mm (001)-Si substrate by metal organic chemical vapor deposition

Cerba, Tiphaine; Martin, M.; Moeyaert, J.; David, S.; Rouvière, Jean-Luc; Cerutti, L.; Alcotte, Reynald; Rodriguez, J. B.; Bawedin, M.; Boutry, H.; Bassani, F.; Bogumilowicz, Y.; Gergaud, P.; Tournié, E.; Baron, T.

doi:10.1016/j.tsf.2017.10.024

Cited by 18 publications

(17 citation statements)

References 23 publications

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“…Metamorphic buffer layers have proven their usefulness at an industrial scale for SiGe, III–V compound semiconductors, and group III-nitrides, setting record performance in a wide application space from photovoltaics using a metamorphic multijunction solar cell with efficiencies up to 46% 2–4 , III–V based lasers monolithically integrated on Si 5,6 , high-electron mobility transistors 7–9 , and heterojunction tunnel field effect transistors for high-performance low-power logic 10 . Metamorphic epitaxial materials have allowed for more cost effective and larger non-native substrates for electronic devices 11,12 , and are being considered key to realize and advance the existing quantum computing materials platform of Si/SiGe heterostructures towards all-electrical control of Si-based qubits 13 .…”

Section: Introductionmentioning

confidence: 99%

Scaling growth rates for perovskite oxide virtual substrates on silicon

et al. 2019

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The availability of native substrates is a cornerstone in the development of microelectronic technologies relying on epitaxial films. If native substrates are not available, virtual substrates - crystalline buffer layers epitaxially grown on a structurally dissimilar substrate - offer a solution. Realizing commercially viable virtual substrates requires the growth of high-quality films at high growth rates for large-scale production. We report the stoichiometric growth of SrTiO 3 exceeding 600 nm hr −1 . This tenfold increase in growth rate compared to SrTiO 3 grown on silicon by conventional methods is enabled by a self-regulated growth window accessible in hybrid molecular beam epitaxy. Overcoming the materials integration challenge for complex oxides on silicon using virtual substrates opens a path to develop new electronic devices in the More than Moore era and silicon integrated quantum computation hardware.

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Section: Introductionmentioning

confidence: 99%

Scaling growth rates for perovskite oxide virtual substrates on silicon

et al. 2019

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“…The miscut allows for the formation of atomic double steps and, consequently, a single‐domain surface reconstruction . On the other hand, there are endeavors to suppress APB formation on nominal Si(001) wafers because they present the established industrial standard . The sequence of III–Sb layers is depicted in Figure .…”

mentioning

confidence: 99%

The Interaction of Extended Defects as the Origin of Step Bunching in Epitaxial III–V Layers on Vicinal Si(001) Substrates

Niehle

Rodriguez

Cerutti

et al. 2019

Physica Rapid Research Ltrs

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Several nanometer high steps are observed by (scanning) transmission electron microscopy at the surface and interfaces in heteroepitaxially grown III–Sb layers on vicinal Si(001) substrates. Their relations with antiphase boundaries (APBs) and threading dislocations (TDs) are elaborated. An asymmetric number density of TDs on symmetry‐equivalent {111} lattice planes is revealed and explained according to the substrate miscut and the lattice misfit in the heteroepitaxial material system. Finally, a step bunching mechanism is proposed based on the interplay of APBs, TDs, and the vicinal surface of the miscut substrate.

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“…Particular attention was paid to avoid that anti-phase boundaries (APBs), structural defects created at the interface between the non-polar Si substrate and the polar III-V semiconductor epitaxial material [12], propagate through the GaSb buffer layer. The growth proceeded via a two-step process with a low-temperature nucleation layer, in the 350-450°C range, and a high-temperature layer grown at around 600°C, with a V/III ratio around 1 [9]. After annealing, any residual APBs due to local imperfections of the double-step arrangement at the (001) Si surface were annihilated after a thickness of about 200 nm [9,11] The threading-dislocation density in such template is estimated around 10 9 cm −2 [9] whereas the rms roughness measured from 5 × 5 µm 2 atomic-force microscopy images is typically around 0.5 nm [9].…”

Section: Movpe Of the Gasb-on-si Templatementioning

confidence: 99%

“…On another hand, GaSb layers grown by metal-organic vapor phase epitaxy (MOVPE) on 300mm on-axis (001)Si substrates have also recently been reported [9]. Provided high-performance light sources can be grown atop, on-wafer laser-cavity definition and large-dimension GaSb-on-Si wafers could offer a cost-effective solution to implement large-scale integration of mid-IR photonics sensors.…”

Section: Introductionmentioning

confidence: 99%

Etched-cavity GaSb laser diodes on a MOVPE GaSb-on-Si template

Monge-Bartolomé¹,

Cerba²,

Díaz-Thomas³

et al. 2020

Opt. Express

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We report on 2.3-µm etched-cavity GaSb-based laser diodes (LDs) epitaxially integrated on on-axis (001)Si and benchmarked against their cleaved facet counterparts. The LDs were grown in two steps. First, a GaSb-on-Si template was grown by metal-organic vapor phase epitaxy (MOVPE) before the growth of the LD heterostructure by molecular-beam epitaxy. Different etched-facet geometries operate in continuous wave well above room temperature, and their performance are similar to those of cleaved-cavity LDs. These results show that etching mirrors is a viable route to form laser cavities in the GaSb technology and that MOVPE GaSb-on-Si templates are a suitable platform for optoelectronic devices overgrowth.

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Anti phase boundary free GaSb layer grown on 300 mm (001)-Si substrate by metal organic chemical vapor deposition

Cited by 18 publications

References 23 publications

Scaling growth rates for perovskite oxide virtual substrates on silicon

Scaling growth rates for perovskite oxide virtual substrates on silicon

The Interaction of Extended Defects as the Origin of Step Bunching in Epitaxial III–V Layers on Vicinal Si(001) Substrates

Etched-cavity GaSb laser diodes on a MOVPE GaSb-on-Si template

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