Anti-phase domain-free GaAs on Ge substrates grown by molecular beam epitaxy for space solar cell applications

Ringel, S. A.; Sieg, R. M.; Ting, S. M.; Fitzgerald, Eugene A.

doi:10.1109/pvsc.1997.654208

Cited by 9 publications

(8 citation statements)

References 14 publications

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“…The APDs arise in the GaAs buffer layer epitaxially grown on the (001) Ge substrate due to mixed nucleation of Ga and As atoms on the non-polar Ge surface. 13,24 As the growth proceeds, A region containing two GaAsBi APDs near the GaAs buffer layer is shown in Fig. 3 APDs.…”

Section: Atomicmentioning

confidence: 99%

Polarization dependent photoluminescence and optical anisotropy in CuPtB-ordered dilute GaAs1–xBix alloys

Paulauskas

Čechavičius

Karpus

et al. 2020

Journal of Applied Physics

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The GaAs1-xBix semiconductor alloy allows to achieve large bandgap reduction and enhanced spin-orbit splitting energy at dilute Bi quantities. The bismide is currently being developed for near-to midinfrared lasers, multi-junction solar cells, and photodetectors. In this structure-property relationship study of GaAsBi alloys, we report polarization dependent photoluminescence that reaches ratio up to 2.4 at room temperature. Polarization dependence is also presented using transmittance spectra, and also birefringence and linear dichroism. The optical anisotropy observations agree with predictions of point symmetry reduction in the CuPtB-type ordered GaAsBi phase. The structural ordering is investigated experimentally from the atomic-scale in molecular-beam epitaxy (MBE) grown samples on exact and miscut (001) GaAs substrates, as well as a sample composed of anti-phase domains in which the ordering axes are rotated by right angles. Since the conditions stabilizing the CuPtB ordered phase fall within the typical MBE growth regime of dilute bismides, the optical anisotropy in GaAsBi alloys is expected to be ubiquitous. These findings are important for the future development of GaAsBibased optoelectronics and also provide new means to analyze structurally complex bismide alloys.

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Section: Atomicmentioning

confidence: 99%

Polarization dependent photoluminescence and optical anisotropy in CuPtB-ordered dilute GaAs1–xBix alloys

Paulauskas

Čechavičius

Karpus

et al. 2020

Journal of Applied Physics

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“…Further improvements in conversion efficiency of GaAs-on-Si solar cells must be attained because higher minority-carrier lifetime of 10.5ns that is due to low density of threading dislocations as low as 8x10 5 cm -2 has been obtained using SiGe buffer layer by the Ohio State Univ. [22]. 17.1% (AM0) efficiency (Voc=1.023 V, Jsc=28.3mA/cm 2 , FF=80.5%) has been realized with GaAs single-junction solar cell with 0.04 cm 2 area on Si by using SiGe buffer layer [22].…”

Section: Approaches Of High Efficiency Gaas On Si Single-junction Sol...mentioning

confidence: 99%

“…[22]. 17.1% (AM0) efficiency (Voc=1.023 V, Jsc=28.3mA/cm 2 , FF=80.5%) has been realized with GaAs single-junction solar cell with 0.04 cm 2 area on Si by using SiGe buffer layer [22].…”

Section: Approaches Of High Efficiency Gaas On Si Single-junction Sol...mentioning

confidence: 99%

(Invited) Potential and Activities of III-V/Si Tandem Solar Cells

et al. 2015

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The paper presents efficiency potential of III-V/Si tandem solar cells with efficiencies of more than 35% under 1-sun AM1.5G and effects of dislocation upon solar cell properties of III-V-on-Si single-junction solar cells and III-V/Si tandem solar cells. Because III-V/Si system has large lattice mismatching and difference in thermal expansion coefficient, generation of misfit and thermal stress induced dislocations affect on solar cell properties. Effects of dislocations upon minority-carrier lifetime are derived from considering one dimensional transport of minority carriers to dislocations. In order to realize high efficiency solar cells with similar efficiency by homo-epitaxially grown solar cells, low density dislocation of less than 3x105 cm-2 is necessary. This paper also reviews approaches on reduction in dislocation density in III-V compound films on Si and improvements in efficiencies of III-V compound single-junction solar cells on Si substrates and III-V/Si tandem solar cells.

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“…Also, graded Si 1-x Ge x layer on the Si substrate is suggested (x: 0 to 1), which would favour integration of GaAs based devices on Si substrate [7,8]. Furthermore, the growth conditions of III-V compound semiconductor heterostructures on Ge substrate have to be optimized because the interface between polar on nonpolar semiconductor leads to the formation of anti-phase domains (APDs), threading dislocations (TDs), and inter-diffusion of GaAs and Ge [8][9][10]. Researchers have also addressed different techniques such as off-cut substrates, migration enhanced epitaxy (MEE) layer and so on to overcome above mentioned problems [8,[11][12][13][14].…”

Section: Introductionmentioning

confidence: 99%

Monolithic growth of GaAs/Al_0.3Ga_0.7As multiple quantum well structure on Ge substrate with low defects: theoretical and experimental correlation of the structural and optical properties

Kumar¹,

Panda²,

Saha³

et al. 2020

J. Phys. D: Appl. Phys.

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High quality III–V multiple quantum well (MQW) heterostructure on germanium (Ge) substrate is grown by molecular beam epitaxy. The propagation of defects and dislocations from the Ge/GaAs interface towards the active layer is suppressed via the adapted novel growth strategy. The cross-sectional transmission electron microscopy images showed the active layer of the MQW structure with reduced anti-phase domains and dislocations due to the introduction of migration enhanced epitaxy (MEE) and three-step annealed GaAs buffer layer. The optical properties are compared with another sample having similar heterostructure on GaAs substrate. The variation in full width half maxima with the well thickness has been analyzed via the correlation between photoluminescence (PL) result and calculated penetration depth of electron wave functions into the barrier material. The effect of substrate on the hetero-interface of MQW structure is also investigated. Rapid thermal annealing (RTA) is carried out on the sample with Ge substrate in order to explore the change in optical properties of the MQW structure. PL study indicates insignificant effect of low temperature RTA treatment on the thinner QWs. However, improvement in the optical property such as increment in activation energy and three order enhancement in the PL intensity was observed for the thicker QWs, owing to the amelioration in their structural property.

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Anti-phase domain-free GaAs on Ge substrates grown by molecular beam epitaxy for space solar cell applications

Abstract: Elimination of anti-phase domains (APD's), threading dislocations and uncontrolled interface diffusion are critical considerations for achieving maximum design flexibility and high efficiency in multi-bandgap III-

Cited by 9 publications

References 14 publications

Polarization dependent photoluminescence and optical anisotropy in CuPtB-ordered dilute GaAs1–xBix alloys

Polarization dependent photoluminescence and optical anisotropy in CuPtB-ordered dilute GaAs1–xBix alloys

(Invited) Potential and Activities of III-V/Si Tandem Solar Cells

Monolithic growth of GaAs/Al_0.3Ga_0.7As multiple quantum well structure on Ge substrate with low defects: theoretical and experimental correlation of the structural and optical properties

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Anti-phase domain-free GaAs on Ge substrates grown by molecular beam epitaxy for space solar cell applications

Abstract: Elimination of anti-phase domains (APD's), threading dislocations and uncontrolled interface diffusion are critical considerations for achieving maximum design flexibility and high efficiency in multi-bandgap III-

Cited by 9 publications

References 14 publications

Polarization dependent photoluminescence and optical anisotropy in CuPtB-ordered dilute GaAs1–xBix alloys

Polarization dependent photoluminescence and optical anisotropy in CuPtB-ordered dilute GaAs1–xBix alloys

(Invited) Potential and Activities of III-V/Si Tandem Solar Cells

Monolithic growth of GaAs/Al0.3Ga0.7As multiple quantum well structure on Ge substrate with low defects: theoretical and experimental correlation of the structural and optical properties

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Monolithic growth of GaAs/Al_0.3Ga_0.7As multiple quantum well structure on Ge substrate with low defects: theoretical and experimental correlation of the structural and optical properties