Anti-SEU design of SRAM based on FinFET process

Zhang, Man; Zhang, Lijun; Zhang, Yiping

doi:10.1109/iwcmc48107.2020.9148056

Cited by 2 publications

(1 citation statement)

References 17 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…The following year, they achieved the manufacture of the first p-type FinFET with a gate length of 18 nm, a channel width of 15 nm, and a fin height of 50 nm. This marked the advent of the FinFET era [8].…”

Section: Development Historymentioning

confidence: 99%

Advancements And Applications of Finfet Technology in Modern Semiconductor Engineering

2024

HSET

View full text Add to dashboard Cite

This comprehensive study presents an in-depth analysis of Fin Field-Effect Transistor (FinFET) technology, a significant innovation in semiconductor technology, focusing on its structural attributes, applications, and future prospects. FinFETs, characterized by their distinctive fin-like channels, are pivotal in overcoming the limitations of traditional MOSFETs, particularly in the context of device miniaturization. The paper begins by exploring the basic theory and structural characteristics of FinFETs, emphasizing their enhanced control over short channel effects and reduced leakage currents in scaled-down devices. Attention is then directed towards the integration of FinFET technology in Static Random-Access Memory (SRAM), detailing how FinFETs contribute to improved stability and efficiency in memory storage. Another crucial application discussed is in the biomedical field, where FinFETs have facilitated the development of advanced instrumentation amplifiers and sensitive sensors, marking a leap in medical electronics. The paper concludes by addressing the challenges encountered by FinFETs as fabrication approaches the 5-7nm scale, including their physical and structural limitations. It also highlights ongoing research in structural modifications and material innovations like Gate-All-Around FETs and alternative materials, underscoring the continued evolution and relevance of FinFET technology in the ever-advancing semiconductor industry.

show abstract

Section: Development Historymentioning

confidence: 99%