2013
DOI: 10.21236/ada595642
|View full text |Cite
|
Sign up to set email alerts
|

Antimonide-Based Compound Semiconductors for Low-Power Electronics

Abstract: Public reporting burden for the collection of information is estimated to average 1 hour per response, including the time for reviewing instructions, searching existing data sources, gathering and maintaining the data needed, and completing and reviewing the collection of information. Send comments regarding this burden estimate or any other aspect of this collection of information, including suggestions for reducing this burden, to Washington Headquarters Services, Directorate for Information Operations and R… Show more

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...

Citation Types

0
1
0

Year Published

2016
2016
2016
2016

Publication Types

Select...
1

Relationship

0
1

Authors

Journals

citations
Cited by 1 publication
(1 citation statement)
references
References 20 publications
0
1
0
Order By: Relevance
“…antimonide | membranes | transfer | infrared | integration E pitaxially grown Sb compounds have recently received increasing attention as functional layers in IR detectors (1)(2)(3)(4) and sources (5-9), high-mobility transistors (10)(11)(12), resonant tunneling diodes (13)(14)(15), and low-power analog and digital electronics (10,16). In this scenario we establish a versatile process to release and transfer Sb-based heterostructures from their epitaxial growth substrate to any host, resulting in fabrication of freestanding membranes (17,18).…”
mentioning
confidence: 99%
“…antimonide | membranes | transfer | infrared | integration E pitaxially grown Sb compounds have recently received increasing attention as functional layers in IR detectors (1)(2)(3)(4) and sources (5-9), high-mobility transistors (10)(11)(12), resonant tunneling diodes (13)(14)(15), and low-power analog and digital electronics (10,16). In this scenario we establish a versatile process to release and transfer Sb-based heterostructures from their epitaxial growth substrate to any host, resulting in fabrication of freestanding membranes (17,18).…”
mentioning
confidence: 99%