Antiphase boundaries in GaAs

Abstract

Antiphase boundaries in GaAs have been produced by growing the GaAs on {001} Ge substrates. The GaAs was grown by the technique of organometallic vapor phase epitaxy to a thickness in excess of 1 μm. The antiphase boundaries are shown to be faceted with facets parallel to the {110} planes being particularly common. The rigid-body translation at the different facet planes is shown to be small for the {110} planes but it can be large for other facet planes.

Growth of mm-thick orientation-patterned GaAs for IR and THZ generation

“…For OP-GaAs, the desired antiphase domain wall orientation is along {11 0} planes, and consists of alternating Ga-Ga and As-As bonds along the [0 0 1] direction. {11 0} antiphase boundaries (APBs) in GaAs have the lowest formation energy per unit area [28], and transmission electron microscopy (TEM) investigations have found the {11 0} orientation to be the most common [29]. This suggests that OP-GaAs layers with periodic {11 0} APBs should be attainable.…”

P-type Ge epitaxy on GaAs (100) substrate grown by MOCVD

“…On the other hand, atomic interdiffusions across the interface of Ge and GaAs will degrade the reliability and, thus, the performance of the devices [6,7]. A lot of effort has been made on annihilation of the ADB defects in the growth of GaAs/Ge [8][9][10][11][12]. It has been demonstrated that a Ge (100) substrate with an intentional miscut toward its (111) plane is effective in suppressing the formation of ADB defects.…”

MOVPE growth of GaAs on Ge substrates by inserting a thin low temperature buffer layer

“…Antiphase boundaries (APB´s) are built on exactly oriented Ge(001) substrates [3][4][5]. Electrons can be trapped and the boundaries can be act as non radiative recombination centers [3,6].…”