“Antisite” incorporation of Sb dopant in GaN

Desnica, U. V.; Ravi, Natarajan; Andreasen, H.; Waard, H. de

doi:10.1016/0038-1098(86)90016-5

Cited by 8 publications

(2 citation statements)

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“…Based on the results of their Mössbauer effect studies, which suggested the incorporation of implanted Sb on Ga sites in GaN, Desnica et al proposed that, besides chemical similarities, the atomic or ionic size of an impurity can play a decisive role in determining its preferred lattice site [31,32]. Similar arguments were put forward by Pearton et al [1] regarding the incorporation of the heavy group V elements P, As and Sb in ZnO.…”

Section: Discussionmentioning

confidence: 91%

“…However, so far only few experimental methods have been able to provide reliable knowledge on the lattice sites of these elements in ZnO and GaN. Desnica et al [31,32] concluded from Mössbauer effect studies that 119 Sb implanted into GaN is incorporated in substitutional Ga sites. Since their finding was in contrast to all common III-V compounds, where Sb group V foreign atoms occupy the anion site, they termed Sb Ga an "antisite" defect, in analogy to As Ga antisites, a native defect commonly observed at low concentrations in GaAs crystals.…”

Section: Introductionmentioning

confidence: 99%

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Arsenic in ZnO and GaN: Substitutional Cation or Anion Sites?

et al. 2007

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We have determined the lattice location of ion implanted As in ZnO and GaN by means of conversion electron emission channeling from radioactive 73 As. In contrast to what one might expect from its nature as a group V element, we find that As does not occupy substitutional O sites in ZnO but in its large majority substitutional Zn sites. Arsenic in ZnO is thus an interesting example for an impurity in a semiconductor where the major impurity lattice site is determined by atomic size and electronegativity rather than its position in the periodic system. In contrast, in GaN the preference of As for substitutional cation sites is less pronounced and about half of the implanted As atoms occupy Ga and the other half N sites. Apparently, the smaller size-mismatch between As and N and the chemical similarity of both elements make it feasible that As partly substitutes for N atoms.

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Section: Discussionmentioning

confidence: 91%

Section: Introductionmentioning

confidence: 99%