“…[33,34] In this context, we introduce ac omprehensive dualpassivation (DP) strategy to realize the passivation of defects both inside the GBs and over the surface.Firstly,asolution of conjugated N, N'-bis- (7,7,8,8,9,9,10,10,11,11,12,12,12-tridecafluoro dodecan-5-yl)-perylene-3,4,9,10-tetracarboxylic diimide (FPD) in chlorobenzene (CB) is used as the antisolvent (anti-solution), to implant the FPD inside the film during the nucleation of perovskites.T his protocol ensures that the defects (e.g.,n oncoordinating Pb 2+ )a tG Bs be passivated by the carbonyl groups (C=O), and the fluorine atoms can form hydrogen bonds with MA + to immobilize the cations,t hus ensuring thermal stability. [13][14][15]35] Secondly,ahydrophobic 2D perovskite layer is formed in situ on the 3D perovskite layer by successively depositing 2-(2-Fluorophenyl)ethylamine iodide after the antisolvent-treatment to passivate the defects on the surface.A sar esult, the novel DP strategy prolongs carrier lifetime through defect passivation and, hence,lifts the V OC from 1.10 Vt o1 .18 V, corresponding to a V OC deficit of 0.39 V. In the complete devices,w ea chieved ac hampion stabilized PCE as high as 23.80 %. It is found that besides the excellent thermal and moisture resistant properties [9,14,18,33,36,37] provided by the DP strategy,t he effective passivation of site-vacancy-type defects (e.g., iodine vacancy) successfully suppressed the generation of O 2 À species.E specially,t his is the first time to observe the decrease of destructive O 2 À species by forming a2 Dp erovskite layer.…”