Apparent Band-Gap Narrowing and Its Data Derived from the Measurements of Minority-Carrier Current Density in Heavily Doped Emitters of Silicon Devices

Cong, H. Van; Debiais, G.

doi:10.1002/pssa.2211550229

Cited by 10 publications

(7 citation statements)

References 19 publications

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“…First of all, in intrinsic X-crystals at temperature T(=0 K) [5][6][7][8][9][11][12][13][14][15][16][17][18][19][20][21], X≡ (Ge, GaSb, CdTe, or CdSe), and…”

Section: Effects Of Impurity Size Temperature and Heavy Dopingmentioning

confidence: 99%

(14.82 %, 12.16 %, 26.55 %, or 23.69 %)-Limiting Highest Efficiencies, obtained respectively in \\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\mathbf{n}^+(\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\mathbf{p}^+)-\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\mathbf{p}(\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\mathbf{n})\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\ Crystalline (\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\

Van Cong

2023

Physics

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In the n + (p + ) − p(n) crystalline ( X ≡Ge, GaSb, CdTe or CdSe)-junction solar cells at 300K, due to the effects of impurity size, temperature, heavy doping, and photovoltaic conversion, we show that, with an increasing donor (acceptor)-radius r d a , both the relative dielectric constant and photovoltaic conversion factor decrease, and the intrinsic band gap (IBG) increases, according to the increase in photovoltaic efficiency, as observed in Tables 1-5, being in good accordance with an important result obtained by Shockley and Queisser [10], stating that for an increasing IBG the photovoltaic efficiency increases.Further, for highest values of r d a , the limiting highest efficiencies are found to be given in Tables 2.2, 3.2, 4.2, and 5.2, as: 14.82 %, 12.16 %, 26.55 %, and 23.69 %,), obtained in such n + (p + ) − p(n) crystalline (Ge, GaSb, CdTe, or CdSe)-junction solar cells at the open circuit voltage =0.33 V, 0.355 V, 0.82 V, and 0.89 V, respectively, and at T=300 K.Furthermore, from the well-known Carnot-efficiency theorem, as given in Eq. ( 46), being obtained from the second principle of the thermodynamics, and from the above results of limiting highest efficiencies, the corresponding highest hot reservoir temperatures, T H =352.2 K, 341.5 K, 408.4 K, and 393.1 K, respectively. Thus, as noted above, η max. and T H both increase with an increasing IBG, for each (X≡Ge, GaSb, CdTe, or CdSe)-crystal at T=300 K≡ T C .

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“…First of all, in intrinsic X-crystals at temperature T(=0 K) [5][6][7][8][9][11][12][13][14][15][16][17][18][19][20][21], X≡ (Ge, GaSb, CdTe, or CdSe), and…”

Section: Effects Of Impurity Size Temperature and Heavy Dopingmentioning

confidence: 99%

(14.82 %, 12.16 %, 26.55 %, or 23.69 %)-Limiting Highest Efficiencies, obtained respectively in \\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\mathbf{n}^+(\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\mathbf{p}^+)-\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\mathbf{p}(\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\mathbf{n})\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\ Crystalline (\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\

Van Cong

2023

Physics

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“…In two new single n + (p + ) − p(n) X(x)-alloy junction solar cells at 300 K, [X(x)≡ CdSe 1−x S x , CdSe 1−x Te x ], 0 ≤ x ≤ 1, by basing on the same physical model-and-treatment method, as used in our recent works [1,2], and also other works [3][4][5][6][7][8][9][10][11], some important results, obtained in the present work, are reported in the following.…”

Section: Introductionmentioning

confidence: 99%

34.375 % (33.72 %) -Maximal Efficiencies investigated in New n+(p+)-p(n) CdSe1-xSx, CdSe1-xTex - Crystalline Alloy Junction Solar Cells at 300 K, According to Highest Hot Reservoir Temperatures

Van Cong

2024

ejaset

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In two new single n+(p+)−p(n) X(x)-alloy junction solar cells at 300 K, [X(x)≡CdSe1−xSx, CdSe1−xTex], 0≤x≤1, by basing on the same physical model-and-treatment method, as used in our recent works [1, 2], and also other works [3-6], some important results, obtained in the present work, are reported in the following.As noted in Tables 2.1, 3.1, 4.1 and 5.1, the dark carrier-minority saturation current density JoI(oII) decreases slightly with increasing rd(a)-radius for given x, and decreases strongly with increasing x, for given rd(a)-radius. Further, as discussed in Eq. (45), at a same Voc, both JoI(oII) and nI(II) have the same variations for same physical conditions.In particular, at x=0 and for Sn+Cd(Cd+Sn), both n+(p+)-p(n) CdSe1-xSx(Tex)[≡CdSe ] alloys become CdSe-crystals, as observed in Tables 1.1 and 1.2, and therefore, as given in Tables 2.2 (3.2), and 4.2 (5.2), we get the same numerical results of nImax.(IImax.)[=28.184 % (28.310 %)].Further, at x=1 and for Sn+Cd(Cd+Sn), we obtain: (a) in the n+(p+)-p(n) CdSe1-xSx(Tex)[≡CdS ] alloy-junction solar cells, nImax.(IImax.)=34.375 % (33.72 %) and TH=457.1 K (452.6 K), as those given in Tables 2.2 (3.2), and (b) in the +(p+)-p(n) CdSe1-xTex(Tex)[≡CdTe ] alloy-junction solar cells, nImax.(IImax.)=25.676 % (25.443 %), according to: TH=403.6 K (402.4 K), respectively, as those given in Tables 4.2 (5.2).Finally, from above remarks, we could conclude that, in order to obtain the highest efficiencies, the present (CdSe1-xSx, CdSe1-xTex)- crystalline alloy junction solar cells could be chosen rather than the crystalline (CdSe, CdTe)-junction solar cells [1, 2], yielding the highest efficiencies equal to: 26.55 % and 23.69 %, respectively.

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“…In single 𝑛𝑛 + (𝑝𝑝 + ) − 𝑝𝑝(𝑛𝑛) 𝐺𝐺𝐺𝐺𝐴𝐴𝐴𝐴 1−𝑥𝑥 𝑃𝑃 𝑥𝑥 -alloy junction solar cells at 300 K, 0 ≤ 𝑥𝑥 ≤ 1, by basing on the same physical model and treatment method, as used in our two recent works , and also on other ones (Green et al, 2022;Kittel, 1976;Moon et al, 2016;Singh & Ravindra, 2012;, 2016, 1999, 1995, 1991, 1975Van Cong & Debiais, 1997, 1996, 1993Van Cong & Doan Khanh, 1992;Van Cong et al, 1984), we will investigate the highest (or maximal) efficiencies, 𝜂𝜂 𝐼𝐼𝐼𝐼𝐼𝐼𝑥𝑥.(𝐼𝐼𝐼𝐼𝐼𝐼𝐼𝐼𝑥𝑥.) , (i)-The unperturbed relative effective electron (hole) mass in conduction (valence) bands are given by: 𝑚𝑚 𝑜𝑜 (𝑥𝑥)/𝑚𝑚 𝑜𝑜 = 0.13 × 𝑥𝑥 + 0.066 × (1 − 𝑥𝑥), and 𝑚𝑚 𝑣𝑣 (𝑥𝑥)/𝑚𝑚 𝑜𝑜 = 0.500 × 𝑥𝑥 + 0.291 × (1 − 𝑥𝑥),…”

Section: Introductionmentioning

confidence: 99%

Maximal Efficiencies in New Single GaAs(1−x) P(x) - Alloy Junction Solar Cells at 300 K

Van-Cong

2024

ejtas

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In single n+(p+) − p(nn) [X(x) ≡ GA1−xPx]-alloy junction solar cells at 300 K, 0 ≤ xx ≤ 1, by basing on the same physical model and the same treatment method, as those used in our recent works (Van Cong, 2024), we will also investigate the highest (or maximal) efficiencies, ηImax .(IImax.) at the open circuit voltageVos(= Vos1 (os2 ),according to highest hot reservoir temperatures TH(K), obtained from the Carnot efficiency theorem, which was demonstrated by the use of the entropy law. Here, some concluding remarks are given in the following. (i)-First, with increasing x=(0, 0.5, 1), from Table 3, obtained for the single n+ − p X(x)-alloy junction solar cells, and for given rSn(Cd)-radius, for example, one obtains: ηImax (↗)= 31.18%, 33.495%, 35.99%, according to TH(K) = 435.9, 451.1, 468.7, at Vos (V) = 1.07, 1.06, 1.05, respectively. (ii)- Secondly, with increasing x=(0, 0.5, 1), from Table 5, obtained for the single p+ − n X(x)-alloy junction solar cells, and for given rCd(Sn)-radius, for example, one gets: ηηIImax (↘)= 33.05%, 31.95%, 31.37%, according to TH(K) = 448.0, 440.9, 437.1, at Vos (V)[>Vos(V)] = 1.20, 1.15, 1.12, respectively, suggesting that such ηImax .(IImax .)-and-TH variations dependon Vos(V)[> Vos (V)] − values. Then, in particular, as given in Table 3, for x = 0 and (rda ) =(pt), one gets: ηI =23.48 % and 29.76 % at Vos= 0.98 V and 1.1272 V, respectively, which can be compared with the corresponding results obtained by Moon et al. (2016) and Green et al. (2022) for the single-junction GaAs thin-film solar cell, 22.08 % and 29.71 %, with relative deviations in absolute values, 6.34 % and 0.17 %. Finally, one notes that, in order to obtain the highest efficiencies, the single GaAs1−x Px-alloy junction solar cells could be chosen rather than the single crystalline GaAs-junction solar cell.

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Apparent Band-Gap Narrowing and Its Data Derived from the Measurements of Minority-Carrier Current Density in Heavily Doped Emitters of Silicon Devices

Cited by 10 publications

References 19 publications

34.375 % (33.72 %) -Maximal Efficiencies investigated in New n+(p+)-p(n) CdSe1-xSx, CdSe1-xTex - Crystalline Alloy Junction Solar Cells at 300 K, According to Highest Hot Reservoir Temperatures

Maximal Efficiencies in New Single GaAs(1−x) P(x) - Alloy Junction Solar Cells at 300 K

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