Application and analysis of thermosensitive parameters in the case of hybrid power modules

Evaluation of IGBT thermo-sensitive electrical parameters under different dissipation conditions – Comparison with infrared measurements

“…The second TSEP is the threshold voltage V th . It is determined with a very low current regulation acting on the gate voltage [15,16]. The third TSEP is the gate-emitter voltage under a high current I c .…”

Temperature measurement on series resistance and devices in power packs based on on-state voltage drop monitoring at high current

“…Along these cycles, I gradually increases practically passing through thermal quasi-equilibrium states. Moreover, Eqs (1)(2)(3)(4)(5) are valid in this approximation because of their linear dependence on temperature. Both steps of calibration, TSP calibration at high current and series resistance contribution determination, can be performed without opening the pack.…”

“…However, Eqs. (1)(2)(3)(4)(5) and their corresponding fittings are valid as long as the electrical steady state is reached. Nevertheless, this is not an important constraint, since the thermal response time is smaller than the electrical one.…”

“…V i h values are calculated by using Eqs (1)(2)(3)(4)(5), where the series resistance contribution is taken into account when the whole pack is maintained at the same temperature. T vj is measured using the low current method for each device type.…”

“…Usually, the onstate voltage drop (collector emitter voltage drop, V CE,sat ) at low current and threshold voltage (V th ) in IGBTs, or the on-state voltage drop (V F,on ) at low current in diodes are the most employed [1]. However, the measured temperatures correspond to an averaged value between all the chips of the same type inside the pack, which do not provide a local temperature measurement.…”