Evaluation of IGBT thermo-sensitive electrical parameters under different dissipation conditions – Comparison with infrared measurements

Abstract

a b s t r a c tJunction temperature evaluation is a key parameter used to control a power module assembly. But measuring the junction temperature by thermo-sensitive electrical parameters (TSEPs) does not reveal the actual temperature of the semiconductor device. In this paper, a specific electronic board used to compare four common TSEPs of IGBT chips is presented. For this comparison, two dissipation modes are used: dissipation in active and saturation regions. In order to have referential measurements we carried out surface temperature measurements of IGBT chips with an infrared (IR) camera. A dedicated numerical tool is presented to estimate the mean surface temperature of active region. In the case of a single IGBT chip, the comparison between IR and TSEP measurements show that the best studied parameter (in terms of robustness and usability) is the gate emitter voltage.

Preliminary Evaluation of Thermo-Sensitive Electrical Parameters Based on the Forward Voltage for Online Chip Temperature Measurements of IGBT Devices

“…In each case, the temperature given by the TSEP is compared with the temperatures given by IR measurements. This figure shows that VCE_Ict gives temperature measurements between the mean and maximum temperatures as it was already demonstrated in [9,[19][20]. This TSEP is weakly influenced by the degradation because the difference between mean and TSEP temperatures decreases slightly (<2°C) when two bond wires are cut.…”

“…-one infrared (IR) camera is used to evaluate the surface temperature of the chips, -a classical TSEP is compared with the new TSEP: the forward voltage under low current. In the following sections, it will be called VCE Ict.It has been shown by various authors that this TSEP is robust and gives temperature measurements close to the mean temperature of the chip [18][19][20].…”

Junction temperature measurements via thermo-sensitive electrical parameters and their application to condition monitoring and active thermal control of power converters

“…Discrepancies between the measured 'average' temperature via TSEPs and the actual temperature peak in the device have been identified as far back as 1966 [56] as well as in more recent studies [57]- [59]. It has also been demonstrated that alternate TSEPs can give varying temperature measurements on the same device under the same conditions, as well as having a dependence on dissipation mode [60] [61].…”

Electrothermal Evaluation of Single and Multiple Solder Void Effects on Low-Voltage Si MOSFET Behavior in Forward Bias Conditions

“…The surface temperature of the prototype is measured by an infrared camera CEPIP-FLIR and a K-type open thermocouple placed at a corner of the leadframe. For infrared measurement, we deposit a 10µm-thick paint on the entire upper surface of the prototype which offers an emissivity of 0.93 in the functional wave length interval of the infrared camera [25]. Here we introduce only the validation of single-void simulation consisting in electrical and thermal comparisons.…”