Junction temperature measurements via thermo-sensitive electrical parameters and their application to condition monitoring and active thermal control of power converters

Baker, Nick; Liserre, Marco; Dupont, Laurent; Avenas, Yvan

doi:10.1109/iecon.2013.6699260

Cited by 43 publications

(31 citation statements)

References 49 publications

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“…The use of temperature sensitive electrical parameters (TSEPs) for identifying the junction temperature of power semiconductors is one of the main techniques used for the implementation of condition monitoring strategies [2], which can be used for assessing ageing damage, improving the lifetime of the module and defining operational constraints. The use of TSEPs for condition monitoring has made the electrothermal characterization of power devices and modules essential for effective implementation.…”

Section: Introductionmentioning

confidence: 99%

Impact of the gate driver voltage on temperature sensitive electrical parameters for condition monitoring of SiC power MOSFETs

Gonzalez

Alatise

2017

Microelectronics Reliability

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Condition monitoring using temperature sensitive electrical parameters (TSEPs) is widely recognized as an enabler for health management of power modules. The on-state resistance/forward voltage of MOSFETs, IGBTs and diodes has already been identified as TSEPs by several researchers. However, for SiC MOSFETs, the temperature sensitivity of on-state voltage/resistance varies depending on the device and is generally not as high as in silicon devices. Recently the turn-on current switching rate has been identified as a TSEP in SiC MOSFETs, but its temperature sensitivity was shown to be significantly affected by the gate resistance. Hence, an important consideration regarding the use of TSEPs for health monitoring is how the gate driver can be used for improving the temperature sensitivity of determined electrical parameters and implementing more effective condition monitoring strategies. This paper characterizes the impact of the gate driver voltage on the temperature sensitivity of the on-state resistance and current switching rate of SiC power MOSFETs. It is shown that the temperature sensitivity of the switching rate in SiC MOSFETs increases if the devices are driven at lower gate voltages. It is also shown, that depending on the SiC MOSFET technology, reducing the gate drive voltage can increase the temperature sensitivity of the on-state resistance. Hence, using an intelligent gate driver with the capability of customizing occasional switching pulses for junction temperature sensing using TSEPs, it would be possible to implement condition monitoring more effectively for SiC power devices.

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Section: Introductionmentioning

confidence: 99%

Impact of the gate driver voltage on temperature sensitive electrical parameters for condition monitoring of SiC power MOSFETs

Gonzalez

Alatise

2017

Microelectronics Reliability

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“…As high potential for lifetime extension is in elimination of short-term thermal cycles [11], usual thermocouples connected to the chips cannot fulfill the bandwidth demand. Thus, in commercial product solutions, junction temperature estimations on the basis of electrical measurements [21] are more realistic as there is no need to increase complexity of power modules. The electro-thermal model for this purpose consist of three parts: A device model that holds the electrical characteristics of the used power module, a power losses model for the semiconductors, and a thermal model to estimate the heat propagation in the module.…”

Section: Electro-thermal Modelmentioning

confidence: 99%

Active thermal control of IGBT power electronic converters

Falck

Andresen

Liserre

2015

IECON 2015 - 41st Annual Conference of the IEEE Industrial Electronics Society

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Abstract-Thermal cycling is one of the main sources of aging and failures in power electronics. A possibility to reduce the stress to semiconductors is to control the amount of losses that occur in the device during operation. This work presents an active thermal controller that aims at reducing the junction temperature variations in the case of variable power profile. The switching frequency of the converter is the parameter that is affected by the active thermal control, while the operation of the converter remains unchanged. The novelty of the approach is that the switching frequency variation is exploited to prevent excessive cooling down of the semiconductor during a power reduction. A thermal model is used to estimate the losses, so the prior knowledge of the mission profile is not needed. The results of the proposed solution are validated with an experimental prototype and a wide-bandwidth temperature measurement system directly applied to the semiconductor chip. Finally, the impacts of the controller on the module's lifetime is estimated.

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“…Even if there are various possibilities for the measurement [48], it is not desired to increase the system costs with additional sensors. Therefore observers, thermal models and lookup tables have been applied [7], [8], [33], [34], [35], [36], [37].…”

Section: Challengesmentioning

confidence: 99%

Review of active thermal and lifetime control techniques for power electronic modules

Andresen

Liserre

Buticchi

2014

2014 16th European Conference on Power Electronics and Applications

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Junction temperature measurements via thermo-sensitive electrical parameters and their application to condition monitoring and active thermal control of power converters

Cited by 43 publications

References 49 publications

Impact of the gate driver voltage on temperature sensitive electrical parameters for condition monitoring of SiC power MOSFETs

Impact of the gate driver voltage on temperature sensitive electrical parameters for condition monitoring of SiC power MOSFETs

Active thermal control of IGBT power electronic converters

Review of active thermal and lifetime control techniques for power electronic modules

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