2021
DOI: 10.31399/asm.cp.istfa2021p0211
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Application and Optimization of Automated ECCI Mapping to the Analysis of Lowly Defective Epitaxial Films on Blanket or Patterned Wafers

Abstract: The physical limits of CMOS scaling, as predicted by Moore's Law, should have already been reached several years ago. However, the scaling of transistors is still ongoing due to continuous improvements in material quality enabling the fabrication of complex device structures with nm-size dimensions. More than ever, the structural properties and the eventual presence of crystalline defects in the various semiconductor materials (SiGe, III/V) play a critical role. Electron channeling contrast imaging (ECCI) is a… Show more

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