The
process characteristics, the surface chemistry, and the resulting
film properties of Ru deposited by atomic layer deposition from (ethylbenzyl)(1-ethyl-1,4-cyclohexadienyl)Ru(0)
(EBECHRu) and O2 are discussed. The surface chemistry was
characterized by both combustion reactions as well as EBECHRu surface
reactions by ligand release. The process behavior on TiN starting
surfaces at 325 °C was strongly influenced by Ti(O,N)
x
segregation on the growing Ru surface with consequences
for both the growth per cycle as well as the film properties. For
optimized process conditions, the films showed high purity with low
C and O concentrations of the order of 1020 at./cm3. Higher deposition temperature led to strong (001) fiber
texture of the films on SiO2 starting surfaces. Annealing
in forming gas improved the crystallinity and led to resistivity values
as low as 11 μΩcm for Ru films with a thickness of 10
nm.
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