Application of a boron source diffusion barrier for the fabrication of back contact silicon solar cells

Hacke, Peter; Gee, J.M.; Sumner, M.W.; Salami, J.; Honsberg, C.B.

doi:10.1109/pvsc.2005.1488349

Cited by 12 publications

(6 citation statements)

References 3 publications

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“…8 or Hacke et al . 14, the dielectric layer is opened in the center in order to allow for a direct contact of the p‐metallization to the silicon substrate. After stripping the mask in aqueous alkaline solution, the via‐holes are drilled with a high speed laser drilling process 12, 15, reaching a drilling rate of around 5000 via‐holes per second.…”

Section: Process Sequencementioning

confidence: 99%

Screen‐printed Emitter‐Wrap‐Through solar cell with single step side selective emitter with 18.8% efficiency

Mingirulli

Stüwe

Specht

et al. 2011

Progress in Photovoltaics

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A fabrication process for Emitter‐Wrap‐Through solar cells on monocrystalline material with high quality gap passivation by wet thermal silicon dioxide is investigated. Masking and structuring steps are performed by screen‐printing technology. Via‐holes are created by an industrially applicable high‐speed laser drilling process. The cell structure features a selective emitter structure fabricated in a single high temperature step: a highly doped emitter at the via‐holes and the rear side, allowing for a low via‐hole resistivity as well as a low resistivity contact to screen‐printed pastes, and a moderately doped front side emitter exhibiting high quantum efficiency in the low wavelength range. Therefore a novel approach is applied depositing either doped or undoped PECVD silicon dioxide layers on the front side. It is shown that doping profiles advantageous for the EWT‐cell structure can be achieved. The screen‐printed aluminum paste is found to penetrate the underlying thermal dioxide layer at appropriate contact firing conditions leading to a zone of high recombination in the overlap region of aluminum and silicon dioxide. It is shown that conventional PECVD‐anti‐reflection silicon nitride acts as effective protection layer reducing the recombination in this region. Designated area conversion efficiencies up to 18.8% on FZ material are obtained applying the single step side selective emitter fabrication technique. Copyright © 2010 John Wiley & Sons, Ltd.

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Section: Process Sequencementioning

confidence: 99%

Screen‐printed Emitter‐Wrap‐Through solar cell with single step side selective emitter with 18.8% efficiency

Mingirulli

Stüwe

Specht

et al. 2011

Progress in Photovoltaics

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show abstract

“…With regard to low-cost production, Advent Solar is going to produce EWT solar cells using multicrystalline silicon wafers and conventional industrial solar cell processing [72,73]. Starting with about 1 Ωcm p-type multicrystalline wafers, EWT solar cells are fabricated by laser drilling a 2 mm × 0.75 mm hole grid pattern.…”

Section: Emitter Wrap Through Solar Cellsmentioning

confidence: 99%

“…The screen-printed diffusion barrier also acts as a barrier to the diffusing species, which are used to form the emitter or the base junction. The phosphorus diffusion barrier has a 0.35 μm wide open channel [72]. Al is later printed and alloyed to compensate the exposed region in the channel.…”

Section: Emitter Wrap Through Solar Cellsmentioning

confidence: 99%

“…After diffusion, the phosphorus glass is etched off, but the diffusion barrier is not etched off. Table 7: Inferred fabrication steps for EWT solar cells produced by Advent Solar according to [72].…”

Section: Emitter Wrap Through Solar Cellsmentioning

confidence: 99%

“…A feature is also that the Al metallization is made wider than the contact width, thus allowing for improved line conductivity. The solar cell fabrication steps according to [72] are given in Table 7 and the solar cell structure is shown in Figure 9.…”

Section: Emitter Wrap Through Solar Cellsmentioning

confidence: 99%

See 2 more Smart Citations

Industrial Silicon Wafer Solar Cells

Neuhaus¹,

Münzer

2007

Advances in OptoElectronics

165

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In 2006, around 86% of all wafer-based silicon solar cells were produced using screen printing to form the silver front and aluminium rear contacts and chemical vapour deposition to grow silicon nitride as the antireflection coating onto the front surface. This paper reviews this dominant solar cell technology looking into state-of-the-art equipment and corresponding processes for each process step. The main efficiency losses of this type of solar cell are analyzed to demonstrate the future efficiency potential of this technology. In research and development, more various advanced solar cell concepts have demonstrated higher efficiencies. The question which arises is “why are new solar cell concepts not transferred into industrial production more frequently?”. We look into the requirements a new solar cell technology has to fulfill to have an advantage over the current approach. Finally, we give an overview of high-efficiency concepts which have already been transferred into industrial production.

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Fabrication of Large-Area Boron Backfield Silicon Solar Cells

Tiantian

Zhang³

et al. 2008

Proceedings of ISES World Congress 2007 (Vol. I – Vol. V)

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Application of a boron source diffusion barrier for the fabrication of back contact silicon solar cells

Cited by 12 publications

References 3 publications

Screen‐printed Emitter‐Wrap‐Through solar cell with single step side selective emitter with 18.8% efficiency

Screen‐printed Emitter‐Wrap‐Through solar cell with single step side selective emitter with 18.8% efficiency

Industrial Silicon Wafer Solar Cells

Fabrication of Large-Area Boron Backfield Silicon Solar Cells

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