Industrial Silicon Wafer Solar Cells

Neuhaus, D.H.; Münzer, Adolf

doi:10.1155/2007/24521

Cited by 165 publications

(103 citation statements)

References 27 publications

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“…In this case specific LFC resistance yields a minimum of 0.5mftcm 2 with only two pulses per contact with an Al layer of 0.2 jxm thickness. 0.4 |xm Al thickness this value is about 1.4 ± 0.1 m£2 cm 2 . Table 1 summarizes the optimal laser conditions for every Al layer thickness, the LF specific contact resistance r c and Al concentration in the center of the laser contact.…”

Section: Electrical Characterizationmentioning

confidence: 79%

“…An example of this strategy is the rear side Laser Fired Contact (LFC), a technique introduced by the Fraunhofer Institute for Solar Energy Systems [2,3] which presents a promising way to reduce the recombination associated with the rear electrode. In Laser-Fired Contact (LFC) an array of low energy laser pulses is used to alloy the aluminum layer to the bulk in localized regions in such a way that it is possible to form rear point contacts.…”

Section: Introductionmentioning

confidence: 99%

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Optimization of laser-firing processes for silicon-heterojunction solar-cell back contacts

Sánchez-Aniorte

Barrio

Casado

et al. 2012

Applied Surface Science

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Keywords:Laser firing Laser processing Heterojunction Solar cell Surface treatment One of the key steps to achieve high efficiencies in amorphous/crystalline silicon photovoltaic structures is to design low-ohmic-resistance back contacts with good passivation in the rear part of the cell. A well known approach to achieve this goal is to use laser-flred contact (LFC) processes in which a metal layer is fired through the dielectric to define good contacts with the semiconductor. However, and despite the fact that this approach has demonstrated to be extremely successful, there is still enough room for process improvement with an appropriate optimization. In this paper, a study focused on the optimal adjustment of the irradiation parameters to produce laser-fired contacts in a-Si:H/c-Si heterojunction solar cells is presented. We used samples consisting of crystalline-silicon (c-Si) wafers together with a passivation layer of intrinsic hydrogenated amorphous silicon (a-Si:H(i)) deposited by plasma-enhanced chemical deposition (PECVD). Then, an aluminum layer was evaporated on both sides, the thickness of this layer varied from 0.2 to 1 u,m in order to identify the optimal amount of Al required to create an appropriate contact. A q-switched NdiYVCu laser source, A. = 532 nm, was used to locally fire the aluminum through the thin a-Si:H(i)-layers to form the LFC. The effects of laser fluences were analyzed using a comprehensive morphological and electrical characterization.

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Section: Electrical Characterizationmentioning

confidence: 79%

Section: Introductionmentioning

confidence: 99%

Optimization of laser-firing processes for silicon-heterojunction solar-cell back contacts

Sánchez-Aniorte

Barrio

Casado

et al. 2012

Applied Surface Science

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“…Before creating electrical contacts in a solar cell, a sequence of several steps are required 4 , which can be seen in the appendix.…”

Section: Metallization Of C-si Solar Cellsmentioning

confidence: 99%

“…Hydrogen diffuses from the H-rich SiNx layer into bulk silicon. Hydrogen is present in the precursors used for the PECVD 4 . An aluminum alloyed back surface field (BSF) is created 12 (the BSF is a diffused layer with the same doping type as the basis, establishing a high-low junction p + p).…”

Section: Firingmentioning

confidence: 99%

Selective Chemical Etching for Studying the Front Side Contact in Thick Film Screen Printed Crystalline P-Type Silicon Solar Cells

Ferrada

Portillo

Cabrera

et al. 2015

J. Chil. Chem. Soc.

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Crystalline silicon solar cells are currently the leading technology in the photovoltaic market with no great expectable change in the shares. The scientific community works on the further development and improvements of state-of-the-art as well as new solar cell materials. This paper reports on a chemical methodology for selective etching to study the metallization step in monocrystalline silicon solar cells. The object of study is a complete processed silicon solar cell which was cleaved via laser beam on the back side and broken per hand to obtain stripes of the size 15.6×1 cm 2 . In the following a sequence of etching chemical solutions to selectively remove the components of the front side silver contact was applied. Scanning electron microscopy was used to investigate contact interface after each etching step. The silver finger, the glass and the silver crystallites grown in silicon could be removed. It came out that the silver crystallites preferably grow at the pyramid tips and edges of the textured wafer. A characterization with Energy Dispersive X-Ray Spectrometry was performed to quantify the components of the silver contact after each chemical etching step. While the weight percentage of silver reduced by more than 90% after an aqua regia treatment, it increased by 13% after hydrofluoric acid. Silver was practically eliminated after a second aqua regia bath. Similarly, the content of glass was also determined. The approach serves for interface investigations in semiconductor technology where screen printing approaches are used for the metallization.

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“…Chemical passivation and field effect passivation [3][4][5][6][7] are commonly used processes for surface passivation. In the former, the interface defect density is reduced by passivation of dangling bonds by attachment of atomic hydrogen present in thin dielectric layers of a-Si:H, Si x N y :H, etc., or by chemisorption of Br or I atoms with silicon surface.…”

Section: Introductionmentioning

confidence: 99%

X-ray photoelectron spectroscopic study of silicon surface passivation in alcoholic iodine and bromine solutions

Batra

Vandana

Srivastava

et al. 2014

Journal of Renewable and Sustainable Energy

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We report an X-ray photoelectron spectroscopic (XPS) study of silicon surfaces passivation using alcoholic solutions of iodine and bromine where different behavior with two systems is observed. The minority carrier lifetime determined by microwave photoconductive decay method showed better surface passivation for iodine-alcoholic system with HF preconditioning step. The iodine-ethanol (I-E) passivated samples show strong Si-I bonding (two times) in Si core level spectra for the samples without oxide (25.5%) compared with oxide (10.2%) counterpart. However, bromine-ethanol (B-E) passivated samples show higher Si-Br bonding strength in the samples with oxide (24.7%) compared to without oxide specimens (12.0%). This may be the reason of difference in passivation behavior of I-E and B-E systems.

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Industrial Silicon Wafer Solar Cells

Cited by 165 publications

References 27 publications

Optimization of laser-firing processes for silicon-heterojunction solar-cell back contacts

Optimization of laser-firing processes for silicon-heterojunction solar-cell back contacts

Selective Chemical Etching for Studying the Front Side Contact in Thick Film Screen Printed Crystalline P-Type Silicon Solar Cells

X-ray photoelectron spectroscopic study of silicon surface passivation in alcoholic iodine and bromine solutions

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