Application of a solution proximity annealing technique for fabrication of ion-implanted GaAs integrated circuits

Prince, F.; Armiento, Craig

doi:10.1109/edl.1986.26279

Cited by 7 publications

(5 citation statements)

References 8 publications

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“…Since the sheet resistance depends on both the carrier concentration (percent activation) and the mobility, it serves as a useful indicator of the quality of the implanted layer. Capacitance-voltage measurements on the EOP annealed samples yielded concentration profiles which were almost identical to profiles obtained using the solution proximity approach (11). 5, the EOP technique consistently resulted in lower sheet resistances than the GaAs proximity approach for all the annealing conditions investigated.…”

Section: Resultssupporting

confidence: 59%

“…Also, the electron mobility was typically greater, despite the fact that the carrier concentration was higher in these samples (due to the increased activation) than in the GaAs proximity annealed samples. Capacitance-voltage measurements on the EOP annealed samples yielded concentration profiles which were almost identical to profiles obtained using the solution proximity approach (11).…”

Section: Surface Morphology and Surface Conversion--any An-supporting

confidence: 62%

“…A dose of 7 • 10 ~z cm -2 was chosen for our studies on low dose activation. The values of the sheet resistance obtained using the EOP-RTA technique were equal to samples annealed in a furnace for 30 min using the solution proximity method (11), which demonstrates the quality of this process. Figure 5 is a plot of the sheet resistance data from samples annealed using the GaAs proximity and EOP annealing methods.…”

Section: Resultsmentioning

confidence: 70%

“…5, the EOP technique consistently resulted in lower sheet resistances than the GaAs proximity approach for all the annealing conditions investigated. The values of the sheet resistance obtained using the EOP-RTA technique were equal to samples annealed in a furnace for 30 min using the solution proximity method (11), which demonstrates the quality of this process. The lowest sheet resistance resulting from the GaAs proximity method (900~ 5s) was 59% higher than the best result obtained using the EOP approach (950~ 10s).…”

Section: Surface Morphology and Surface Conversion--any An-mentioning

confidence: 70%

“…The enhanced overpressure proximity method is based on the same principle as the solution proximity annealing technique which was developed for capless furnace annealing of GaAs (11). The furnace approach utilizes a Sn-Ga-As solution in close proximity to the implanted GaAs wafer to provide an arsenic-rich atmosphere during the 30 min annealing cycle.…”

Section: Experimental Coditionsmentioning

confidence: 99%

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Capless Rapid Thermal Annealing of GaAs Implanted with Si+ Using an Enhanced Overpressure Proximity Method

Armiento¹,

Lehman²,

Prince³

et al. 1987

J. Electrochem. Soc.

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3. By ion implantation, the reflectivity of the wafer in the infrared region increases, but it decreases to a level below that of the substrate as the impurities are activated by annealing. Therefore the absorption of infrared rays increases and the heating rate becomes faster than that after ion implantation.4. Previously, the difference of the heating rate due to impurity concentration was reported, but now a similar effect is found in ion-implanted layers. ABSTRACTA new approach for capless rapid thermal annealing of ion implanted III-V semiconductors, the enhanced overpressure proximity (EOP) technique, has been developed and applied to GaAs implanted with Si +. The EOP method relies on the use of an Sn-coated GaAs wafer to provide a greater localized arsenic overpressure than can be achieved by the conventional proximity method which utilizes a GaAs wafer. Implant doses of 7 • 10 '~ and 1 • 10 '4 cm 2 havebeen investigated, yielding activations as high as 60 and 35%, respectively. Under the appropriate annealing conditions photoluminescence data confirm that EOP-RTA reduces the concentration of Si on As sites when compared with the conventional proximity approach. In addition, this technique permits an increased latitude in annealing times and temperatures that can be used without degradation of the wafer surface. The EOP approach can be easily extended for capless rapid thermal annealing of other implanted dopants in GaAs as well as other III-V compounds such as InP and InGaAs.) unless CC License in place (see abstract). ecsdl.org/site/terms_use address. Redistribution subject to ECS terms of use (see 138.251.14.35 Downloaded on 2015-06-07 to IP Vol. 134,No. 8

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Section: Resultssupporting

confidence: 59%

Section: Surface Morphology and Surface Conversion--any An-supporting

confidence: 62%

Section: Resultsmentioning

confidence: 70%

Section: Surface Morphology and Surface Conversion--any An-mentioning

confidence: 70%

Section: Experimental Coditionsmentioning

confidence: 99%

See 3 more Smart Citations

Capless Rapid Thermal Annealing of GaAs Implanted with Si+ Using an Enhanced Overpressure Proximity Method

Armiento¹,

Lehman²,

Prince³

et al. 1987

J. Electrochem. Soc.

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Effect of heat treatment on InGaAs/GaAs quantum wells

Elman¹,

Köteles²,

Melman³

et al. 1990

Journal of Applied Physics

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Capless rapid thermal annealing of GaAs using an enhanced overpressure proximity technique

Armiento¹,

Prince²

1986

Applied Physics Letters

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A new approach for capless rapid thermal annealing of ion implanted III-V semiconductors, the enhanced overpressure proximity (EOP) technique, has been developed and applied to GaAs implanted with Si+. The EOP method relies on the use of a Sn-coated GaAs wafer to provide a localized arsenic overpressure around the ion implanted wafer during the annealing cycle. The arsenic overpressure resulting from this arrangement is greater than the overpressure obtained with the conventional proximity method, which utilizes an untreated GaAs wafer as an arsenic source. This new annealing technique has yielded higher electrical activation and electron mobilities in GaAs than the conventional proximity method as well as an increased latitude in annealing times and temperatures. The EOP approach can be easily extended for capless rapid thermal annealing of other III-V compounds such as InP and InGaAs.

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Application of a solution proximity annealing technique for fabrication of ion-implanted GaAs integrated circuits

Cited by 7 publications

References 8 publications

Capless Rapid Thermal Annealing of GaAs Implanted with Si+ Using an Enhanced Overpressure Proximity Method

Capless Rapid Thermal Annealing of GaAs Implanted with Si+ Using an Enhanced Overpressure Proximity Method

Effect of heat treatment on InGaAs/GaAs quantum wells

Capless rapid thermal annealing of GaAs using an enhanced overpressure proximity technique

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